SEMiX251D12Fs DataSheet

SEMiX251D12Fs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Tc = 85 °C
256
A
Tc = 100 °C
217
A
Tj = 25 °C
1660
A
Tj = 150 °C
1330
A
Tj = 25 °C
13700
A²s
Tj = 150 °C
8800
A²s
VRSM
1200
V
VRRM
1200
V
-40 ... 150
°C
-40 ... 125
°C
1 min
4000
V
1s
4800
V
Rect. Diode
ID
IFSM
i2t
SEMiX® 13
Tj = 150 °C
sinus 180°
10 ms
10 ms
Tj
Bridge Rectifier Module
(uncontrolled)
Module
Tstg
Visol
SEMiX251D12Fs
AC sinus 50Hz
Characteristics
Features
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
• UL recognised file no. E63532
Typical Applications*
• Fast Input Bridge Rectifier for AC/DC
motor control
• Power supply
• High frequency applications
Symbol
Conditions
min.
typ.
max.
Unit
Rectifier Diode
VF
Tj = 25 °C, IF = 155 A, chiplevel
2.5
V
V(TO)
Tj = 125 °C, chiplevel
1.2
V
rT
Tj = 125 °C, chiplevel
7
m
IRD
Tj = 125 °C, VRD = VRRM
Rth(j-c)
sin. 180
per diode
40
mA
0.26
K/W
K/W
Module
Rth(c-s)
per chip
K/W
per module
0.04
K/W
Ms
to heat sink (M5)
3
5
Mt
to terminals (M6)
2.5
5
Nm
5 * 9,81
m/s²
a
w
350
Nm
g
D
© by SEMIKRON
Rev. 1 – 21.03.2013
1
SEMiX251D12Fs
Fig. 4L: Power dissipation per module vs. direct current
Fig. 4R: Power dissipation per module vs. case
temperature
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
2
Rev. 1 – 21.03.2013
© by SEMIKRON
SEMiX251D12Fs
spring configuration
SEMiX 13
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 21.03.2013
3