SEMIKRON SEMIX302KT16S

SEMiX302KT16s
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
A
Chip
Tc = 85 °C
300
Tc = 100 °C
230
A
Tj = 25 °C
9300
A
Tj = 130 °C
8000
A
Tj = 25 °C
432000
A2s
Tj = 130 °C
320000
A2s
VRSM
1700
V
VRRM
1600
V
IT(AV)
ITSM
i2t
®
SEMiX 2s
sinus 180°
10 ms
10 ms
VDRM
(di/dt)cr
Tj = 130 °C
Rectifier Thyristor Module
(dv/dt)cr
Tj = 130 °C
SEMiX302KT16s
Tj
1600
V
130
A/µs
1000
V/µs
-40 ... 130
°C
Module
Tstg
Visol
Features
AC sinus 50Hz
• Terminal height 17 mm
• Chips soldered directly to isolated
substrate
Characteristics
Typical Applications*
Symbol
• Input Bridge Rectifier for AC/DC motor
control
• Power supply
-40 ... 125
°C
1 min
4000
V
1s
4800
V
Conditions
min.
typ.
max.
Unit
Chip
VT
Tj = 25 °C, IT = 900 A
1.7
V
VT(TO)
Tj = 130 °C
0.85
V
rT
Tj = 130 °C
1.7
mΩ
IDD;IRD
Tj = 130 °C, VDD = VDRM; VRD = VRRM
75
mA
tgd
Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs
1
tgr
VD = 0.67 * VDRM
2
µs
tq
Tj = 130 °C
150
µs
IH
Tj = 25 °C
150
500
mA
300
1000
mA
µs
IL
Tj = 25 °C, RG = 33 Ω
VGT
Tj = 25 °C, d.c.
3
V
IGT
Tj = 25 °C, d.c.
200
mA
VGD
Tj = 130 °C, d.c.
IGD
Tj = 130 °C, d.c.
0.25
10
Rth(j-c)
per thyristor
Rth(j-c)
per thyristor
Rth(j-c)
mA
K/W
per module
sin. 180°
V
K/W
0.091
K/W
per module
K/W
per thyristor
K/W
per module
K/W
Module
Rth(c-s)
per chip
K/W
per module
0.045
K/W
Ms
to heat sink (M5)
3
5
Nm
Mt
to terminals (M6)
2.5
5
Nm
5 * 9,81
m/s2
a
w
250
g
KT
© by SEMIKRON
Rev. 41 – 25.03.2010
1
SEMiX302KT16s
Fig. 1L: Power dissipation per thyristor/diode vs.
on-state current
Fig. 1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig. 2L: Power dissipation of one module vs. rms current
Fig. 2R: Power dissipation of one module vs. case
temperature
Fig. 3L: Power dissipation of two modules vs. direct
current
Fig. 3R: Power dissipation of two modules vs. case
temperature
2
Rev. 41 – 25.03.2010
© by SEMIKRON
SEMiX302KT16s
Fig. 4L: Power dissipation of three modules vs. direct
current
Fig. 4R: Power dissipation of three modules vs. case
temperature
Fig. 5: Recovered charge vs. current decrease
Fig. 6: Transient thermal impedance vs. time
Fig. 7: On-state characteristics
Fig. 8: Surge overload current vs. time
© by SEMIKRON
Rev. 41 – 25.03.2010
3
SEMiX302KT16s
Fig. 9: Gate trigger characteristics
spring configuration
SEMiX 2s
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
4
Rev. 41 – 25.03.2010
© by SEMIKRON