SEMiX171KH16s Absolute Maximum Ratings Symbol Conditions Values Unit A Chip Tc = 85 °C 170 Tc = 100 °C 125 A Tj = 25 °C 5400 A Tj = 130 °C 4800 A Tj = 25 °C 145000 A2s Tj = 130 °C 115000 A2s VRSM 1700 V VRRM 1600 V IT(AV) ITSM i2t ® SEMiX 1s sinus 180° 10 ms 10 ms VDRM (di/dt)cr Tj = 130 °C Rectifier Thyr./Diode Module (dv/dt)cr Tj = 130 °C SEMiX171KH16s Tj 1600 V 200 A/µs 1000 V/µs -40 ... 130 °C Module Tstg Visol Features AC sinus 50Hz • Terminal height 17 mm • Chips soldered directly to isolated substrate Characteristics Typical Applications* Symbol • Input Bridge Rectifier for AC/DC motor control • Power supply -40 ... 125 °C 1 min 4000 V 1s 4800 V Conditions min. typ. max. Unit Chip VT Tj = 25 °C, IT = 500 A 1.6 V VT(TO) Tj = 130 °C 0.85 V rT Tj = 130 °C 1.5 mΩ IDD;IRD Tj = 130 °C, VDD = VDRM; VRD = VRRM 60 mA tgd Tj = 25 °C, IG = 1 A, diG/dt = 1 A/µs 1 tgr VD = 0.67 * VDRM 2 µs tq Tj = 130 °C 150 µs IH Tj = 25 °C 150 400 mA 300 1000 mA µs IL Tj = 25 °C, RG = 33 Ω VGT Tj = 25 °C, d.c. 2 V IGT Tj = 25 °C, d.c. 150 mA VGD Tj = 130 °C, d.c. IGD Tj = 130 °C, d.c. 0.25 10 V mA Rth(j-c) per thyristor Rth(j-c) per thyristor 0.18 K/W per module 0.18 K/W K/W per module sin. 180° Rth(j-c) K/W per thyristor K/W per module K/W Module Rth(c-s) per chip K/W per module 0.075 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm 5 * 9,81 m/s2 a w 145 g KH © by SEMIKRON Rev. 2 – 25.03.2010 1 SEMiX171KH16s Fig. 1L: Power dissipation per thyristor/diode vs. on-state current Fig. 1R: Power dissipation per thyristor/diode vs. ambient temperature Fig. 2L: Power dissipation of one module vs. rms current Fig. 2R: Power dissipation of one module vs. case temperature Fig. 3L: Power dissipation of two modules vs. direct current Fig. 3R: Power dissipation of two modules vs. case temperature 2 Rev. 2 – 25.03.2010 © by SEMIKRON SEMiX171KH16s Fig. 4L: Power dissipation of three modules vs. direct current Fig. 4R: Power dissipation of three modules vs. case temperature Fig. 5: Recovered charge vs. current decrease Fig. 6: Transient thermal impedance vs. time Fig. 7: On-state characteristics Fig. 8: Surge overload current vs. time © by SEMIKRON Rev. 2 – 25.03.2010 3 SEMiX171KH16s Fig. 9: Gate trigger characteristics spring configuration SEMiX 1s This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 4 Rev. 2 – 25.03.2010 © by SEMIKRON