SKiiP 28MLI07E3V1 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 650 V Ts = 25 °C 135 A Ts = 70 °C 107 A 150 A ICnom ICRM MiniSKiiP® 2 3-Level NPC Inverter SKiiP 28MLI07E3V1 VGES tpsc Tj ICRM = 2 x ICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 650 V 300 A -20 ... 20 V 6 µs -40 ... 175 °C Ts = 25 °C 126 A Ts = 70 °C 97 A 150 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • 650V Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Typical Applications* • Uninterruptible power supplies (UPS) • Solar inverters Remarks • Case temperature limited to TC = 125°C max.; TC = TS (valid for baseplateless modules) • Product reliability results valid for Tj≤150°C (recommended Top=-40…+150°C) IFRM IFRM = 2 x IFnom 300 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1200 A -40 ... 175 °C Ts = 25 °C 126 A Ts = 70 °C 97 A 150 A Tj Clamping diode IF Tj = 175 °C IFnom IFRM IFRM = 2xIFnom 300 A IFSM 10 ms, sin 180°, Tj = 25 °C 1200 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80°C, 20A per spring Tstg Visol AC sinus 50 Hz, t = 1 min 120 A -40 ... 125 °C 2500 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 150 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.45 1.90 V Tj = 150 °C 1.70 2.10 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.82 0.9 V Tj = 25 °C 3.7 6.0 mΩ 5.9 8.0 mΩ 5.8 6.4 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 9.24 nF f = 1 MHz 0.58 nF rCE VGE = 15 V chiplevel VGE(th) VGE = VCE, IC = 2.4 mA ICES VGE = 0 V VCE = 650 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 5.1 mA f = 1 MHz 0.27 nF QG VGE = - 8 V...+ 15 V 1200 nC RGint Tj = 25 °C 2.00 Ω MLI © by SEMIKRON Rev. 0 – 19.02.2014 1 SKiiP 28MLI07E3V1 Characteristics Symbol Conditions min. typ. max. Unit T1 / T4 td(on) 108 ns 73 ns Tj = 150 °C 5.5 mJ Tj = 150 °C 268 ns Eoff Rth(j-s) per IGBT, λpaste=0.8 W/K*m Eon td(off) tf MiniSKiiP® 2 Tj = 150 °C Tj = 150 °C VCE = 300 V IC = 150 A VGE = +15/-15 V RG on = 3 Ω RG off = 1.6 Ω di/dton = 2100 A/µs di/dtoff = 1700 A/µs tr Tj = 150 °C 76 ns Tj = 150 °C 5.6 mJ 0.55 K/W T2 / T3 3-Level NPC Inverter td(on) tr Eon SKiiP 28MLI07E3V1 td(off) tf Eoff VCE = 300 V IC = 150 A VGE = +15/-15 V RG on = 3 Ω RG off = 1.6 Ω di/dton = 2520 A/µs di/dtoff = 1750 A/µs Features Rth(j-s) • 650V Trench IGBTs • Robust and soft diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised: File no. E63532 Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel Typical Applications* rF • Uninterruptible power supplies (UPS) • Solar inverters Remarks 106 ns 64 ns Tj = 150 °C 2 mJ Tj = 150 °C 268 ns Tj = 150 °C 77 ns Tj = 150 °C 5.2 mJ 0.55 K/W Tj = 25 °C 1.4 1.8 V Tj = 150 °C 1.4 1.8 V Tj = 25 °C 1.04 1.236 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 2.4 3.5 mΩ Tj = 150 °C 3.6 5.2 mΩ 121 A 20 µC Err IF = 150 A Tj = 150 °C di/dtoff = 2450 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C 5.5 mJ Rth(j-s) per Diode, λpaste=0.8 W/K*m 0.75 K/W IRRM Qrr • Case temperature limited to TC = 125°C max.; TC = TS (valid for baseplateless modules) • Product reliability results valid for Tj≤150°C (recommended Top=-40…+150°C) chiplevel Tj = 150 °C Tj = 150 °C Clamping diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF chiplevel Tj = 25 °C V 1.4 1.8 V 1.04 1.236 V Tj = 150 °C 0.85 0.99 V Tj = 25 °C 2.4 3.5 mΩ 3.6 5.2 mΩ Err Rth(j-s) per Diode, λpaste=0.8 W/K*m Qrr 1.8 Tj = 25 °C Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 2210 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C IRRM 1.4 Tj = 150 °C 116 A 13.2 µC 2.6 mJ 0.75 K/W Module Ms to heat sink w weight 2 2.5 Nm 55 g 5.0 ± 5% kΩ Temperature Sensor R25 NTC, Tr = 25 °C 1) MLI 2 Rev. 0 – 19.02.2014 © by SEMIKRON SKiiP 28MLI07E3V1 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 19.02.2014 3 SKiiP 28MLI07E3V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 19.02.2014 © by SEMIKRON SKiiP 28MLI07E3V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 0 – 19.02.2014 5