SKM 300GA123D

SKM 300GA123D
. 2 03 4* #
Absolute Maximum Ratings
Symbol Conditions
IGBT
*5
&*
&*:
Values
.6 2 03 4*
/011
.6 2 /31 4*
. 2 03 4*
811
+
. 2 91 4*
001
+
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SEMITRANS® 4
IGBT Modules
SKM 300GA123D
Units
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811
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011
+
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+
0011
+
311
+
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Inverse Diode
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Module
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Features
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. 2 03 4* #
Characteristics
Symbol Conditions
IGBT
<5
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2
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21 *5
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2
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2 /3
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typ.
max.
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33
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Units
J
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11D3
KLM
GA
1
05-08-2008 SEI
© by SEMIKRON
SKM 300GA123D
Characteristics
Symbol Conditions
Inverse Diode
(
2
5*
&( 2 011 +>
min.
<5
21
typ.
max.
.6 2 03 4*
B
0
03
.6 2 /03 4*
B
/9
Units
.6 2 03 4*
(1
.6 2 /03 4*
(
®
SEMITRANS 4
IGBT Modules
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E
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1/3
KLM
01
Module
SKM 300GA123D
Features
! "! #
$ % &
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-
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:**NC55N
/3
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.2 03 4*
1/9
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.2 /03 4*
100
E
1189
KLM
8
3
03 //
3 0
881
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our staff.
Typical Applications*
# GA
2
05-08-2008 SEI
© by SEMIKRON
SKM 300GA123D
SEMITRANS® 4
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
:
:
:
:
2/
20
28
2;
2/
20
28
38
/93
8/
1;
11;
11/9F
111/D
OLM
OLM
OLM
OLM
2;
1118
:
:
:
:
2/
20
28
2;
2/
20
28
93
81
99
/0
11;
111;;
111D9
OLM
OLM
OLM
OLM
2;
1113
Zth(j-c)D
IGBT Modules
SKM 300GA123D
Features
! "! #
$ % &
'
#
( ) # *+ & "
,*- * *
-
.!
/0 01 Typical Applications*
# GA
3
05-08-2008 SEI
© by SEMIKRON
SKM 300GA123D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
05-08-2008 SEI
© by SEMIKRON
SKM 300GA123D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
05-08-2008 SEI
© by SEMIKRON
SKM 300GA123D
UL Recognized
File 63 532
* , 3F
<+
6
* , 3F
05-08-2008 SEI
© by SEMIKRON