PI2161 - Vicor

Cool-Switch®
PI2161
60 Volt, 12 Amp Full-Function Load Disconnect Switch Solution
Product Description
Features
The Cool-Switch® PI2161 is a complete full-function Load
Disconnect Switch solution for medium voltage applications
with a high-speed electronic circuit breaker and a very low
on-state resistance MOSFET. It is designed to protect an input
power bus from output load fault conditions. The PI2161
Cool-Switch solution is offered in an extremely small,
thermally enhanced 7mm x 8mm LGA package. The PI2161
enables an extremely low power loss solution with fast
dynamic response to an over current fault or high conditions.
The PI2161 senses a small portion of the total MOSFET current
and has a low voltage threshold allowing the use of low power
sense resistors.
• Integrated High Performance 12 A, 8.5 mΩ MOSFET
The switch is closed when the EN input is low and is open
when EN is high. Once enabled, the PI2161 monitors the
MOSFET current through a sense resistor. If an over current
level is sensed, the switch is quickly latched off to prevent the
power source from being overloaded. Bringing the EN pin
high will reset the over current latch allowing retry. The
PI2161 has an internal 10 kΩ bias resistor connected between
the Drain (D) and VC to eliminate need for external resistor in
a 44 V bus application (41 V to 48 V).
• Very small, high density fully-optimized solution with
simple PCB layout
• Programmable latching over-current detection
• Fast 120ns disconnect response to load failures
• Low loss current sensing
• Fast disable via EN pin, typically 200 ns.
• Load Status output (VO scaled load voltage)
Applications
•
•
•
•
N+1 Redundant Power Systems
Servers & High End Computing
Load Disconnect
High Side Circuit Breaker
Package Information
• The PI2161 is offered in the following package:
17-pin 7mm x 8mm thermally enhanced LGA package,
achieving <10°C/W RθJ-PCB
Typical Application
IOUT
SH
D
EN
SL
EN
PI2161
VC
0.1 µF
PG
GND
VOUT
†
SP
SN
CVC
RS
VO
LOAD
VIN
VO
RPG
RVO
Figure 2 — PI2161 response time to output short fault condition
Figure 1 — PI2161 High Side Disconnect switch
Cool-Switch®
Rev 1.3
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PI2161
Order Information
Part Number
Package
Transport Media
PI2161-01-LGIZ
7mm x 8mm 17-pin LGA
T&R
Absolute Maximum Ratings
Note: Unless otherwise specified, all voltage nodes are referenced to “PG”
Name
Rating
Drain-to-Source Voltages (VD to VSH and VSL)
60 V @ 25°C
Source Current (ISH+ISL) Continuous
12 A @ 25°C
Source Current (ISH+IS) Pulsed (10 μs)
100 A
Source Current (ISH+IS) Pulsed (300 ns) [1]
Single Pulse Avalanche Current (TAV<11 μs) [1]
Junction-to-Ambient Thermal Resistance (RθJ-A)
150 A
33 A
45°C/W (0 LFM)
Junction-to-PCB Thermal Resistance (RθJ-PCB)
10°C/W
SH, SL, SP, SN to PG
-0.3 V to 13 V / 20 mA
SH to SL [4]
± 1.5 V
VC to PG
-0.3 V to 13 V / 10 mA
Drain (D) to PG, Drain (D) to GND
-0.3 V to 60 V / 10 mA
VO, EN
-0.3 V to 60 V / 1 mA
Storage Temperature
-65°C to 150°C
Operating Junction Temperature
-40°C to 140°C
Internal MOSFET Operating Junction Temperature
-40°C to 150°C
Lead Temperature (Soldering, 20 sec)
250°C
ESD Rating
CDM Class IV
[1]
These parameters are not production tested but are guaranteed by design, characterization, and correlation with statistical process control.
[4]
A sense Resistor (Rs) has to be connected between SH and SL as shown in Figure 1, Rs ≤ 2 Ω.
Cool-Switch®
Rev 1.3
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PI2161
Pin Description
Pin Number
Pin Name
1
EN
Description
Enable: Logic level input, active low allows switch to reach 8.5 mΩ typical in the on state within 2 ms. A
logic high input will turn the switch off in typically 200 ns. Leave this pin open to allow switch to turn on
after application of input power.
Load Status Output: This pin pulls to the load voltage once the switch is enabled through an internal
2
VO
150 kΩ resistor. Connect a resistor from this pin to ground to scale the load voltage to the appropriate
logic or analog level. Ground this pin if unused.
3
VC
Voltage Bias: This pin is the supply pin for the control circuitry and gate driver. Connect a 0.1 μF
capacitor between the VC pin and the PG pin. Voltage on this pin is regulated to 11.7 V with respect to
PG by an internal shunt regulator. A 10 kΩ internal resistor (RD-VC) is connected between D pin and VC pin.
4
PG
5
SP
Control Circuitry Return: PG is the floating return path for the controller circuitry. Connect this pin via a
resistor to the GND (ground), as shown in Figure 1.
Sense-Positive Input: Connect the SP pin to the SL pin side of the sense resistor as a Kelvin connection.
The magnitude of the voltage difference between SP and SN provides an indication of the current
through the sense resistor and the SL section of the MOSFET.
6,7
SL
8
SN
Source Low: A low percentage of the internal N-channel MOSFET source current passes through this to
the sense resistor. Refer to the Current Sense section in the Functional Description.
Sense-Negative Input: Connect the SN pin to the SH pin side of the sense resistor as a Kelvin connection.
The magnitude of the voltage difference between SP and SN provides an indication of the current
through the sense resistor and the SL section of the MOSFET.
9, 10, 11, 17
SH
12, 13, 14, 16
D
15
GND
Source High: The Source of the internal N-channel MOSFET section providing the majority of the load
current and alternate bias to the control circuitry.
Drain: The Drain of the internal N-channel MOSFET, connect to the input power source bus voltage that
provides the current to the load.
Ground: This pin is the return (ground) for the enable circuitry.
Connect this pin to the logic/system power ground.
Package Pin-Outs
PI2161
Cool-Switch®
Rev 1.3
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PI2161
Electrical Characteristics
Unless otherwise specified: -40°C < TJ < 125°C, VVC-PG = 10.5 V, VPG = VGND = 0 V, CVC = 0.1 μF
Parameter
Symbol
Operating Supply Range
Quiescent Current
Quiescent Current at Start Up
Clamp Voltage
Clamp Shunt Resistance
Under-Voltage Rising Threshold
Under-Voltage Falling Threshold
Under-Voltage Hysteresis
VVC-PG
IVC
IVCSU
VVC-CLM
RSHUNT
VVCUVLO
VVCUVF
VVCUV-HS
Operating Supply Range
D to VC resistance
D input UVLO Rising Threshold
VVD-GND
RD-VC
VVD-UVLO
Conditions
Control Circuit Supply (VC to PG)
No VC limiting Resistor
VC = 10.5 V, SP = SN = VC
VC = 8.5 V, SP = SN = PG
IVC = 3 mA
Delta IVC = 10 mA
VD = VVC , measure when VD = VSH
Min
Typ
8.5
Max
Unit
V
mA
mA
V
Ω
V
V
mV
2.0
11
1.7
2.5
11.7
6.2
6
240
7.32
7.00
320
10.5
2.1
3.0
12.5
10
8.5
7.9
400
41
8
27
44
10
33
48
14
38
V
kΩ
V
VVC +0.3
V
250
mV
Drain Supply
RPG = 6 kΩ
RPG = 6 kΩ, ISH = -1 mA EN = 0 V
Differential Amplifier and Comparators
Common Mode Input Voltage
Differential Operating
Input Voltage [1]
SP Input Bias Current
SN Input Bias Current
DBST Diode Forward Voltage
(SN to VC)
Low Range Overcurrent Threshold
Low Range Overcurrent Turn-off Time
High Range Overcurrent Threshold
Overcurrent Hysteresis [1]
Over Current Range switch
over Threshold
Over Current Range switch
over delay [1]: Low to high Threshold
Over Current Range switch
over delay: High to low threshold
Drain-to-Source Breakdown Voltage
Source Current Continuous
Drain to source Off State Current
Drain-to-Source On Resistance
Current Sense Ratio [3]
VCM
VSP-SN
ISP
ISN
VDBST
VOC-THL
TOC-OFF
VOC-THH
VOC-HY
VPG
SP-SN
SP = SN = VC
SP = SN = VC
15
25
35
50
0.87
1.0
133
9
70
120
166
13
77
200
200
17
mV
ns
mV
mV
ISN = 3 mA
VC-SN = 0 V
VSP-SN = 0~200 mV step to 90% of VSH max, SN = VC
VC-SN = 6 V
μA
μA
25
37
63
V
VSOTH
VC-SN
0.5
0.8
1
V
TSOL2H
VC-SN = -0.7 V~1.7 V
100
170
300
ns
TSOH2L
SN-VC = -1.7 V~0.7 V
80
125
190
ns
BVDSS
ISH+ISL
IDS-OFF
RDSon
KS
Internal N-Channel MOSFET
ID = 2 mA, Tj = 25°C
In ON state, Tj=25°C
EN = 3.3 V, VD = 44 V, VSH = VSL = 0 V
In ON state, ID = 10 A. Tj = 25°C
ISL/ (ISH+ISL), ID = 10 A [4]
3.2
8.5
12
4.3
11
8
V
A
mA
mΩ
%
Cool-Switch®
Rev 1.3
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60
PI2161
Electrical Characteristics (Cont.)
Unless otherwise specified: -40°C < TJ < 125°C, VVC-PG = 10.5 V, VPG = VGND = 0 V, CVC = 0.1 μF
Parameter
DClamp Forward voltage
Symbol
VF
Conditions
Min
Typ
Internal Schottky Diode (between PG and SH)
VF = 10 mA, Tj = 25°C
Max
Unit
400
mV
158
5
kΩ
μA
1.6
V
μA
Load Status Voltage (VO)
Source (SH) to VO resistance
Source to VO leakage
RSH-VO
IVOLK
142
150
Enable ( EN )
Threshold Voltage
Input bias @ 3.3 V
VEN
0.4
50
IEN
[1]
These parameters are not production tested but are guaranteed by design, characterization, and correlation with statistical process control.
[2]
Current sourced by a pin is reported with a negative sign.
[3]
Refer to the Current Sense section in the Functional Description.
[4]
A sense Resistor (Rs) has to be connected between SH and SL as shown in Figure 1, Rs ≤ 2 Ω.
Cool-Switch®
Rev 1.3
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800 927.9474
PI2161
The PI2161 integrated Cool-Switch product takes advantage of two
different technologies combining low RDS(on) N-channel MOSFETs
with high density control circuitry to provide a high side fast Circuit
Breaker solution. The PI2161’s 8.5 mΩ on state resistance MOSFET
minimizes the voltage drop, at the maximum rated current of 12 A,
significantly reducing power dissipation and eliminating the need
for heat sinking.
As shown in the typical application Figure 1 and the block diagram
Figure 5, the unique aspect of the load current sensing scheme is that
only a small portion of the total MOSFET source current is routed
through the sense resistor (Rs). This allows using a much lower
power component compared to the conventional method of sensing
the total current to the load. Figure 5, Figure 6 and Figure 7 show the
PI2161 block diagram, timing diagram and state diagram
respectively.
Differential Amplifier
The PI2161 integrates a high-speed fixed offset voltage differential
amplifier to sense the difference between the Sense Positive (SP) pin
and Sense Negative (SN) pin voltage. The amplifier output is
connected to the control logic that determines the state of the fault
latch. To avoid tripping the breaker due to load capacitance during
initial power up, a higher threshold (VOC-THH) is used. The amplifier
will detect if the drop across the sense resistor reaches 166 mV and
discharge the gate of the MOSFET if detected. Once the load voltage
approaches the input potential, the threshold (VOC-THL) is lowered to
70 mV. This allows for capacitive load charging and continuous
current sensing without the use of a sense blanking timer.
Current Sense
The PI2161 internal MOSFET source is split into two portions, Source
High current (SH) and Source Low current (SL). SH conducts the
majority of the current and SL conducts a small portion of the load
current. SL current is routed through the sense Resistor (Rs) for
current sensing.
Current Sense Ratio (Ks) [%]
Functional Description
6.0
5.8
5.6
Ju
n
5.4
5.2
5.0
Ju
4.8
4.6
on
tio
n
Te
m
Te
m
pe
pe
4.0
3.8
ra t
u re
ra t
ure
=1
=2
25
°C
5°C
40
50
60
70
80
90 100 110 120 130 140 150
Sense Resistor Value (mΩ)
Figure 3 — Current ratio vs. sense resistor over temperature
Figure 4 characterizes the trip current range between 25°C and
125°C over a range of sense resistor values.
The equations and an example for calculating Rs value for a trip
current level and the equation for the trip current at a given sense
resistor value are provided in the Application Information section.
Enable Input (EN)
This input provides control of the switch state enabling and disabling
with logic level signals. The active low feature allows grounding or
floating of the input resulting in switch closure upon application of
input power. System control can disable the switch and reset the
over current latch by pulling this pin to a logic high state.
Once enabled the load voltage will reach the input voltage in
typically 1 ms and the device will sense the current continuously
once the POR interval has cleared relative to the VC to PG potential.
The disable control with this input is very fast, turning the switch off
in typically 200 ns. The response to open during an over current
event is typically 120 ns and the switch will latch off until reset by
bringing this input high or recycling of the input power.
40
38
Overcurrent Threshold = 70 mV
Typical RDS(on) at 25°C = 8.5 mΩ
36
34
32
30
28
26
24
22
20
Ju n c
18
Ju n c
16
14
12
Where:
tion T
e mp
eratu
re =
tion T
25°C
emp
eratu
re =
1 25°
C
10
30
RS :
RDS(on):
KS:
ISL:
ILoad:
cti
nc
4.4
4.2
30
Over Current Trip (A)
12 • R DS ( on )
I
K S = SL =
I Load 144 • R DS ( on ) + ( Rs + 17.5) • (11)
Typical RDS(on) at 25°C = 8.5 mΩ
3.6
3.4
3.2
The value of the sense Resistor in the path of the sense current, will
create a voltage drop and have an effect on the current ratio KS. The
current ratio is expressed in the following equation as a function of
RDS(on) and Rs.
Note that the MOSFET RDS(on) value is temperature dependent and
temperature will effect the current ratio. For one RDS(on) value the
current ratio is constant with respect to the load current. Current
ratio vs. sense resistor over temperature performance is shown in
Figure 3.
6.6
6.4
6.2
Sense Resistor value in [mΩ]
MOSFET ON resistance value [mΩ]
Current sense ratio
SL sense current [A]
Load Current [A]
40
50
60
70
80
90 100 110 120 130 140 150
Sense Resistor Value (mΩ)
Figure 4 — Over current trip vs. sense resistor over temperature
Cool-Switch®
Rev 1.3
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800 927.9474
PI2161
VC Voltage Regulator and MOSFET Drive
The biasing scheme in the PI2161 uniquely enables the gate control
relative to the PG pin via the resistor RPG shown in Figure 1. The VC
input provides power to the control circuitry, the charge pump and
the gate driver. An internal regulator clamps the VC voltage to 11.7 V
with respect to PG.
The internal regulator circuit has a comparator to monitor VC
voltage and pulls the gate low when VC to PG is lower than the VC
Under-Voltage Threshold.
During start up or in a fault condition when the output (Load) is
shorted, the VC pin is biased through a 10 KΩ (RD-VC) internal resistor
connected to the drain of the MOSFET. The VC pin will be biased
through the load potential once the MOSFET is enabled.
In a high voltage application as shown in Figure 1 the lower bias
resistor RPG placed between the PG pin and system ground is
required. RPG creates an offset voltage at the PG pin to regulate VC
with respect to PG when the MOSFET is enabled and the load voltage
reaches the input voltage.
The PI2161 has an integrated charge pump that approximately
doubles the regulated VC with respect to PG enhancing the NChannel MOSFET gate to source voltage.
The internal gate driver controls the N-channel MOSFET such that in
the on state, the gate driver applies current to the MOSFET gate
driving it to bring the load up to the input voltage and into the
RDS(on) condition.
When an over current condition is sensed the gate driver pulls the
gate low to PG and discharges the MOSFET gate with 4 A peak
capability.
Load Status (VO)
When the Gate is enabled, a 150 kΩ resistor is connected to the
MOSFET source and VO. An external resistor between VO and
ground creates a voltage divider that scales the load voltage down to
the desired level to interface with the diagnostic circuit to represent a
logic state or analog voltage level. The external resistor RVO can be
calculated using the following equation:
RVO = 150KΩ •
VO
VSH − VO
Where:
VO :
Desired voltage level at VO pin
VSH:
Enabled load or SH voltage
Cool-Switch®
Rev 1.3
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PI2161
Figure 5 — PI2161 block diagram
Initial Power-up
Disabled
Over
Current
Reset
VIN
Latched
EN
VC
Internal
Gate
Over Current Threshold
IOUT
VOUT
VO
Scaled VSH
Figure 6 — PI2161 timing diagram, referenced to Figure 1
Cool-Switch®
Rev 1.3
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800 927.9474
Latched
PI2161
Figure 7 — PI2161 State Diagram, referenced to Figure 1
Cool-Switch®
Rev 1.3
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PI2161
Typical Characteristics
1.15
1.76
VVC-PG = 10.5 V
VC Quiescent Current (mA)
1.74
1.10
1.72
ID = 2 mA
1.70
1.05
1.68
1.66
1.00
1.64
1.62
0.95
1.60
0.90
1.58
-50
-25
0
25
50
75
100
125
-50
150
-25
75
100
125
150
1.5
70.0
IS = 12 A
1.4
69.5
RDS(on) (Normalized)
69.0
68.5
68.0
1.3
1.2
1.1
1.0
0.9
VVC-PG = 10.5 V
67.5
0.8
VC = SN
67.0
0.7
-25
0
25
50
75
100
125
150
-50
Junction Temperature (°C)
-25
0
25
50
75
100
125
150
Junction Temperature (°C)
Figure 9 — Low Range Overcurrent Threshold vs. temperature
Figure 12 — Internal MOSFET on-state resistance vs. temperature
100
130
VSp-SN = 0 to 200 mV step
128
124
122
120
118
10
TJ =
15 0°
C
IS - Source Current (A)
SN = VC
126
TJ =
25°C
Low Overcurrent Threshold (mV)
50
1.6
70.5
Low Overcurrent Turn-off Time (ns)
25
Figure 11 — Internal MOSFET drain to source breakdown voltage
vs.temperature
Figure 8 — Controller bias current vs. temperature
-50
0
Junction Temperature (°C)
Junction Temperature (°C)
116
1
114
-50
-25
0
25
50
75
100
125
0.2
150
Junction Temperature (°C)
Figure 10 — Low Range Overcurrent Turn-off time vs. temperature
0.4
0.6
0.8
1.0
1.2
Vf-BD - Diode Forward Voltage (V)
Figure 13 — Internal MOSFET source to drain diode forward voltage
(pulsed ≤300 µs).
Cool-Switch®
Rev 1.3
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PI2161
Thermal Characteristics
150
150
Air Flow = 0 LFM
Rds(on)max = 11 mΩ @ 25°C
130
RθJA = 45°C/W
120
110
1
TA =
100
00°C
9
TA =
90
TA =
80
0°C
80°C
70°C
TA =
60°C
TA =
50°C
TA =
70
60
1
2
3
Rds(on)max = 11 mΩ @ 25°C
130
RθJA = 35°C/W
120
110
1
TA =
100
0°C
8
TA =
80
0°C
70°C
TA =
60°C
TA =
50°C
TA =
70
50
4
5
6
7
8
9
0
10 11 12
1
2
3
4
5
Figure 14 — MOSFET Junction Temperature vs. Input Current for a given
ambient temperature (0 LFM)
13
12
8
; Ma
mΩ
7
6
x TJ
Input Current (A)
9
= 11
5
= 12
FM
,R
m
Ω
FM
DS
=1
,R
1m
DS
Ω
=1
1m
Ω
Ω
m
8.
5
5
8.
=
10
ax
=
7
DS
S
8
,R
0L
D
0L
,R
M
LF
9
LF
M
10 11 12
R DS(on)m
0
20
9
11
20
10
8
RDS(on)max = 11 mΩ; Max TJ = 150°C
12
0
7
Figure 16 — MOSFET Junction Temperature vs. Input Current for a given
ambient temperature (200 LFM)
13
11
6
Input Current (A)
Input Current (A)
Input Current (A)
00°C
9
TA =
90
60
50
0
Air Flow = 200 LFM
140
Junction Temperature (°C)
Junction Temperature (°C)
140
6
5°C
4
3
5
2
45
55
65
75
85
95
105
115
80
125
90
100
110
120
130
140
150
Ambient Temperature (°C)
Ambient Temperature (°C)
Figure 17 — PI2161 input current de-rating vs. PCB temperature, for the
MOSFET maximum TJ at 125°C and 150°C
Figure 15 — PI2161 input current de-rating based on the MOSFET
maximum TJ = 150°C vs. ambient temperature
MOSFET
PI2161
Figure 18 — PI2161 mounted on a 1in2 pad of 0.5 oz copper.
Thermal Image picture, IOUT = 10 A, TA = 25°C, Air Flow = 0 LFM
Cool-Switch®
Rev 1.3
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PI2161
Figure 19 — PI2161 response to an increase in load current
Application Information
The PI2161 Cool-Switch is a medium voltage high side load
disconnect switch.
This section describes in detail the procedure to follow when
designing with the PI2161 load disconnect switch.
Lower Bias Resistor selection: RPG
As described in Functional Description section, in a floating
application as shown in Figure 1 the lower bias resistor RPG placed
between the PG pin and system ground is required. RPG creates an
offset voltage at the PG pin to regulate VC with respect to PG when
the MOSFET is enabled.
The RPG resistor can be calculated using the following expression:
R PG =
Controller maximum VC bias current. 2.1 mA
100 μA:
100 μA is added for a margin
Example: 41 V < VIN < 48 V
Make sure that the PI2161 to turn on below the minimum required
voltage, use 27 V for the minimum voltage to calculate RPG.
RPG =
27V − 12.5V − 1V
= 6.136KΩ or 6.04KΩ
2.1mA + 100μA
Pd RPG =
(48V − 11V ) 2
= 227mW
6.04 KΩ
Enable Input: (EN)
This input provides control of the switch state enabling and disabling
with logic level signals.
VVD −UVLO min − VC clampMAX − V DBST − MAX
I VCMAX + 100μA
The RPG worst case condition for power dissipation is a function of
the maximum BUS voltage and minimum VC clamp voltage.
Where:
Pd RPG =
IVCMAX:
(Vinmax − VC clampMIN ) 2
R PG
VVD-UVLO min:
Drain input UVLO minimum voltage, 27 V
VINMAX:
Vin maximum voltage, 48 V
VCClampMax:
Controller maximum VC clamp voltage, 12.5 V
VDBST-MAX:
Maximum DBST Forward Voltage, 1.0 V
VCClampMin:
Controller minimum VC clamp voltage, 11 V
Current Sense Resistor Selection: Rs
The Rs value can be selected from Figure 4 to set the nominal trip
current at junction temperature for internal MOSFET of 25°C or
125°C. To set the minimum trip current at specific junction
temperature use the following procedure.
The current trip point is a function of the Low Range Overcurrent
Threshold (VOC-THL), the internal MOSFET on resistance (RDS(on)) and
current sense resistor (Rs). To insure that PI2161 will not trip within
the expected nominal operating current range, include the variation
of VOC-THL and RDS(on) in the calculation when selecting Rs. VOC-THL is
70 mV typical, 63 mV minimum and 77 mV maximum. The RDS(on)
typical value at 25°C is 8.5 mΩ and 11 mΩ maximum. RDS(on) will
increase with temperature as shown in Figure 12, and can be
calculated by multiplying the RDS(on) value at 25°C by the normalized
factor in Figure 12 at the expected operating junction temperature or
use the following equation:
Cool-Switch®
Rev 1.3
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800 927.9474
PI2161
(
)
−3
RDS (on) (TJ ) = RDS (on) (25°C) • 0.873 • e 3.75• TJ •10 + 0.041
Where:
This is a low power dissipation resistor and any package size work as
far by selecting the nearest standard value. The closest resistor
available value in 1% accuracy in an 0603 or 0805 package is 0.10 Ω
(100 mΩ).
If 0603 0.10 Ω 1% resistor selected, then the minimum trip current is:
TJ :
Internal MOSFET Junction temperature
RDS(on) : Internal MOSFET RDS(on) at TJ in °C
RDS(on): Internal MOSFET RDS(on) at TJ = 25°C
I TRIP =
63 • (144 • 14.42 + 11 • (100 + 17.5) )
= 12.26 A
12 • 100 • 14.42
The sense resistor can be calculated from the following equation as a
function of the trip current:
Rs =
Internal N-Channel MOSFET BVDSS
VOC _ THL • (144 • R DS ( on ) + 192.5)
12 • I TRIP • R DS ( on ) − 11 • VOC _ THL
And the trip current can be calculated from the following equation:
I TRIP =
VOC _ THL • (144 • R DS ( on ) + 11 • ( Rs + 17.5) )
In load disconnect switch applications when the load is shorted, a
large current is sourced from the input supply through the MOSFET.
Depending on the input impedance of the system and the parasitic
inductance, the current in the MOSFET may exceed the source
pulsed current rating (150 A) just before the PI2161 MOSFET is
turned off.
12 • Rs • R DS ( on )
Sense resistor Maximum power dissipation is:
Pd RS =
VTH − MAX
Rs
2
The peak current during an output short condition is calculated as
follows, assuming that the output has very low impedance and it is
not a limiting factor:
Where:
Rs:
ITRIP:
VOC_THL:
VTH-MAX:
The PI2161’s internal N-Channel MOSFET breakdown voltage (BVDSS)
is rated for 60 V at 25°C and will degrade to 55.5 V at -40°C, refer to
Figure 11. Drain to source voltage should not exceed BVDSS in
nominal operation. During a fast switching transient the MOSFET
can tolerate voltages higher than its BVDSS rating under avalanche
conditions. Refer to the Absolute Maximum Ratings table.
Current sense resistor [mΩ]
Current trip point [A]
Low Range Overcurrent Threshold [mV], 63 mV minimum
Maximum Overcurrent Threshold [mV], 77 mV
Current trip calculation example:
Minimum current tripping point = 12 A
I PEAK =
V D • t OC −OFF
L PARASITIC
Where:
IPEAK:
Peak current in PI2161 MOSFET before it is turned off
VD:
Input voltage or load voltage at D pin before input
short condition did occur
Maximum MOSEFET junction temperature = 100°C.
The lowest tripping current will occur at the internal MOSFET
maximum RDS(on) and its maximum junction temperature, and
minimum Low Range Overcurrent Threshold (VOC-THL).
The MOSET maximum RDS(on) is 11mΩ at 25°C and at maximum
junction temperature will be:
(
−3
)
RDS (on) (100) = 11mΩ • 0.873 • e 3.75 •100 •10 + 0.041
R DS ( on ) (100 ) = 14.42 mΩ
Select Rs at minimum VOC-THL =63 mV
Rs =
tOC-OFF:
Low Range Overcurrent Turn-off Time.
LPARASITIC:
Circuit parasitic inductance
The high peak current during an output short and before the
MOSFET turns off, stores energy in the circuit parasitic inductance,
and as soon as the MOSFET turns off, the stored energy at the drain
side of the internal MOSFET will be released to produce a voltage
higher than the input voltage while the MOSFET source is at ground.
This event will create a high voltage difference between the drain
and source of the MOSFET. The MOSFET will avalanche, but this
avalanche will not affect the MOSFET performance because the
PI2161 has a fast response time to the input fault condition and the
stored energy will be well below the MOSFET avalanche capability.
MOSFET avalanche energy during an output short event is
calculated as follows:
63 • (144 • 14.42 + 192.5)
= 103.32mΩ
12 • 12 • 14.42 − 11 • 63
E AS =
Rs maximum power dissipation:
1.3 • BV DSS
1
2
•
• LPARASITIC • I PEAK
2 1.3 • BV DSS − VS
Where:
2
Pd RS
V
0.077 2
= TH − MAX =
= 57.6mW
Rs
0.103
EAS:
Avalanche energy
BVDSS:
MOSFET maximum rated voltage (60 V)
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PI2161
Power dissipation
In Load Disconnect Switch applications, the MOSFET is on in steady
state operation and the power dissipation is derived from the total
source current and the on-state resistance of the MOSFET.
The PI2161 internal MOSFET power dissipation can be calculated
with the following equation:
Pd MOSFET = Is 2 • RDS (on)
Source Current
PdMOSFET:
MOSFET power dissipation
RDS(on):
MOSFET on-state resistance
R PG =
VVD −UVLO min − VC clampMAX − V DBST − MAX
I VCMAX + 100μA
27V − 12.5V − 1V
= 6.136kΩ
2.1mA + 0.1mA
The closest 1% resistor available is 6.04 kΩ, RPG power dissipation
will be:
Where:
Is:
R PG =
PdR PG =
Note: For the worst case condition, calculate with maximum rated
RDS(on) at the MOSFET maximum operating junction temperature
because RDS(on) is temperature dependent. Refer to Figure 12 for
normalized RDS(on) values over temperature. The PI2161 maximum
RDS(on) at 25°C is 11 mΩ and will increase by 43% at 125°C junction
temperature.
The Junction Temperature rise is a function of power dissipation and
thermal resistance.
(V S − max − V S − PGMin ) 2 (50V − 11V )2
=
= 252mW
R PG
6.04 kΩ
The selected resistor should be capable of supporting the total power
at maximum operating temperature, 60°C. An 0805 (2012) will
support the power requirement.
VO pin
In this application use the minimum voltage output VSH = 40 V, and
for VO use the logic high voltage (2.0 V) with margin, VO = 2.1 V
RVO = 150KΩ •
Trise = RθJA • Pd MOSFET = RθJA • Is 2 • RDS (on)
Closest 1% resistor is 8.45 kΩ to the high side Calculate VO at
VSH = 40 V and RVO=8.45 kΩ
Where:
RqJA :
2.1V
= 8.3KΩ
40V − 2.1V
Junction-to-Ambient thermal resistance (45°C/Watt)
This calculation may require iteration to get to the final junction
temperature. Figure 14 and Figure 16 show the PI2161 internal
MOSFET final junction temperature curves versus conducted current
at maximum RDS(on), given ambient temperatures and air flow.
VO = VSH •
RVO
150KΩ + RVO
VO = 40V •
8.45 KΩ
= 2.133 V
150KΩ + 8.45 KΩ
Load Status Resistor Selection: (RVO)
RVO can be calculated using the following equation:
RVO = 150KΩ •
VO
VSH − VO
Typical Application Example
Load Disconnect Switch Requirement
Bus Voltage = 45 V ±5 V
Maximum Load Operating Current = 9 A
Minimum Trip Current = 10 A
Maximum Ambient Temperature = 60°C, no air flow (0 LFM)
The current flow parasitic inductance is 60 nH.
System logic voltage is 3.3 V and logic high = 2.0 V
Solution
In this application, PI2161 is used to protect the power source from
load failure, configured as shown in the circuit schematic in Figure 21.
RPG Selection
For a margin purpose, select RPG to operate at input voltage below
the required operating voltage, use 27 V minimum operating voltage:
Power Dissipation and Junction Temperature
First use Figure 14 (MOSFET Junction Temperature vs. Input
Current) to find the final junction temperature for 9 A load current
at 60°C ambient temperature. In Figure 14 (illustrated in Figure 20)
draw a vertical line from 9 A to intersect the 60°C ambient
temperature line. At the intersection draw a horizontal line towards
the Y-axis (Junction Temperature). The Junction Temperature at
maximum load current (9 A) and 60°C ambient is 115°C.
RDS(on) is 11 mΩ maximum at 25°C and will increase as the Junction
temperature increases. From Figure 12, at 115°C RDS(on) will increase
by 38%, then maximum at 115°C.
Maximum power dissipation is:
Pdmax = Iin2 • RDS (on) = (9 A)2 • 15.18mΩ = 1.23W
Recalculate TJ:
⎞
⎛ 45°C
TJ max = 60°C + ⎜
∗ (9 A) 2 • 15.18mΩ ⎟ = 115.3°C
⎠
⎝ W
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PI2161
Junction Temperature (°C)
150
Air Flow = 0 LFM
140
133
130
Rds(on)max = 11 mΩ @ 25°C
o
RθJA = 45°C/W
120
115
110
o
C
100 °
TA =
°
0
9 C
TA =
80°C
TA =
70°C
TA =
60°C
TA =
50°C
TA =
100
90
80
70
60
PI2161
50
0
1
2
3
4
5
6
7
8
9
10 11 12
Input Current (A)
Figure 20 — Example 1 final MOSFET junction temperature at 9 A/60°C TA
Figure 21 — PI2161 configured for 10A minimum trip current
Select Rs
The minimum trip current will occur at maximum MOSFET junction
temperature and VOC-THL = 63 mV: MOSFET Junction Temperature for
10 A at 60°C can be estimated using the graph in Figure 14 as
illustrated in Figure 20. Draw a vertical line from 10 A to intersect the
60°C ambient temperature line. At the intersection draw a horizontal
line towards the Y-axis (Junction Temperature). The Junction
Temperature at maximum load current (10 A) and 60°C ambient is
133°C.
Layout Recommendation
(
)
−3
RDS (on) (TJ ) = RDS (on) (25°C) • 0.873 • e 3.75 •TJ • 10 + 0.041
Use the following general guidelines when designing printed circuit
boards. An example of the typical land pattern for the PI2161 is
shown in Figure 22.
• Use a solid ground (return) plane to reduce circuit parasitic.
• Connect Rs terminal at SN pin side and all S pads together with a
wide trace to reduce trace parasitics and to accommodate the high
current output, and also connect all D pads together with a wide
trace to accommodate the high current input.
• Kelvin connect SP pin and SN pin to Rs terminals to the S pins.
• Connect SL pins together with a wide trace connect them to Rs.
(
−3
)
RDS (on) (133) = 11mΩ • 0.873 • e 3.75•133 •10 + 0.041
• Use 1oz of copper or thicker if possible to reduce trace resistance
and reduce power dissipation.
R DS ( on ) (133) = 16.26 mΩ
Rs =
Rs =
• Place CVC very close to PI2161 to have very short traces to PI2161
pins without any PCB via in between.
VOC _ THL • (144 • R DS ( on ) + 192.5)
12 • I TRIP • R DS ( on ) − 11 • VOC _ THL
63 • (144 • 16.26 + 192.5)
= 126.9mΩ
12 • 10 • 16.26 − 11 • 63
The closest 1% resistor available off-the-shelf is 130 mΩ.
The minimum trip current is:
I TRIP =
I TRIP =
VOC _ THL • (144 • R DS ( on ) + 11 • ( Rs + 17.5) )
12 • Rs • R DS ( on )
63 • (144 • 16.26 + 11 • (130 + 17.5) )
= 9.85 A
12 • 130 • 16.26
Figure 22 — PI2161 layout recommendation
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PI2161
Package Drawings
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PI2161
Footprint Recommendation
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PI2161
Vicor’s comprehensive line of power solutions includes high density AC-DC and DC-DC modules and
accessory components, fully configurable AC-DC and DC-DC power supplies, and complete custom
power systems.
Information furnished by Vicor is believed to be accurate and reliable. However, no responsibility is assumed by Vicor for its use. Vicor makes no
representations or warranties with respect to the accuracy or completeness of the contents of this publication. Vicor reserves the right to make
changes to any products, specifications, and product descriptions at any time without notice. Information published by Vicor has been checked and
is believed to be accurate at the time it was printed; however, Vicor assumes no responsibility for inaccuracies. Testing and other quality controls are
used to the extent Vicor deems necessary to support Vicor’s product warranty. Except where mandated by government requirements, testing of all
parameters of each product is not necessarily performed.
Specifications are subject to change without notice.
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email
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Technical Support: [email protected]
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