Si3402-EVB - Silicon Labs

Si 3 4 0 2 - EVB
N ON -I SOLATED E VALUATION B OARD FOR THE Si3402
1. Description
The Si3402 non-isolated evaluation board (Si3402-EVB Rev 1.41) is a reference design for a power supply in a
Power over Ethernet (PoE) Powered Device (PD) application. The Si3402 is described more completely in the data
sheet and application notes. This document describes the evaluation board. An evaluation board demonstrating
the isolated application is described in the Si3402ISO-EVB user’s guide.
2. Si3402 Board Interface
Ethernet data and power are applied to the board through the RJ-45 connector (J1). The board may be powered by
the following:

Connecting a dc source to 1, 2 and 3, 4 (either polarity)
Connecting a dc source to 4, 5 and 7, 8 (either polarity)
 Using an 802.3af-compliant PSE such as Phihong PSA16U-480 (PoE)
The board itself has no Ethernet data transmission functionality, but, as a convenience, the Ethernet transformer
secondary is brought out to the test points. The dc output is at connectors J4(+) and J3(–).

Boards are generally shipped configured to produce +5 V but can be configured for +3.3 V or other output voltages
by changing resistors R5 and R6. Refer to “AN296: Using the Si3400/1/2 PoE PD Controllers in Isolated and
Non-Isolated Designs” and its accompanying Excel® spreadsheet utility for more information. The only other test
point provided is J6, which is the power loss (PLOSS) indicator.
3. Schematics
The Si3402-EVB board schematics and layers are shown in Figures 1 through 6. The Si3402-EVB is normally
populated for 5 V output, Class 3 signature, and without the diode bridge bypass recommended for higher power
levels. Use the ordering option Si3402-C4-EVB for 5 V output, Class 4 signature, and diode bridge bypass for
higher power levels.
Rev. 1.0 3/10
Copyright © 2010 by Silicon Laboratories
Si3402-EVB
A1
10
L5
10
11
12
4
5
6
330 Ohm
L3
TRD1TRD1+
TRCT1
TRCT4
TRD4+
TRD4-
330 Ohm
L2
330 Ohm
L4
RJ-45
J2
7
8
9
330 Ohm
PWR4
MX1+
CT/MX1MX1-
PWR3
9
Optional bypass diodes for >10W applications are
in parallel with C10-C17
RJ-45
J1
K1
LED_K1
8
10/100 Connector
Dual Footprint
PWR2
LED_A1
K2
LED_K2
A2
LED_A2
PWR5
PWR1
1
2
3
S1B
MX0+
CT
MX0TRD2+
TRD2TRCT2
TRCT3
TRD3TRD3+
VC4
16
4
5
6
1
2
3
49.9K
R2
330
+
SP1
Vposf
CT2
CT1
0
C18
0.1uF
11
12
13
14
U1
L1 33uH
D1
PDS5100
Vpos is a EMI and ESD plane. Use top layer.
Si3402
ISOSSFT
Vdd
SSFT
EROUT
Figure 1. Si3402 Schematic—5 V, Class 3 PD
Vneg is a thermal plane as wel as ESD and EMI.
Use thermal vias to at least 1 inch square plane
on backside 1 to 1.2mm pitch 0.3 to 0.33mm diameter.
D11
S1B
D15
VC3
15
C10
1nF
C14
11
7
K1
LED_K1
A1
LED_A1
A2
1nF
C1
K2
LED_K2
Alternate
Gigabit Connector
14
S1B
D14
VC2
D10
S1B
C2
12uF
LED_A2
VC1
13
C11
1nF
C15
1nF
SP2
D13
S1B
D9
S1B
9
10
C12
1nF
C16
1nF
16
15
Vssa
Vneg
1uF
C3
1uF
C4
1uF
17
VSS1
Vposs
RCL
8
45.3
HSO
7
R3
6
C13
1nF
D8
S1B
19
18
SWO
PLOSSb
5
D12
S1B
C17
1nF
20
FB
VSS2
RDET
25.5K
Rev. 1.0
R4
4
3
2
C19
150pF
1
C7
3.3nF
R8
0
FB1
R7
30.1K
C8
0.1uF
30 Ohm
560uF
+ C5
R5
2.87K
C20
2
8.66K R6
C9
0.33uF
3.3n
R1
J12
BND_POST
R9
100
BND_POST
J11
Connect inductor and
output filter caps
together minimizing
area of return loop
and then connect
to output ground plane.
C6
22uF
Si3402-EVB
Figure 2. Top Silkscreen
Si3402-EVB
Rev. 1.0
3
Figure 3. Top Layer
Si3402-EVB
4
Rev. 1.0
Figure 4. Internal 1
Si3402-EVB
Rev. 1.0
5
Figure 5. Internal 2
Si3402-EVB
6
Rev. 1.0
Figure 6. Bottom Layer
Si3402-EVB
Rev. 1.0
7
Si3402-EVB
4. Bill of Materials
Table 1 is the BOM listing for the standard 5 V evaluation board with a popular option for Class 3 or Class 4.
Table 1. Si3402-EVB Bill of Materials
Item
NI
Qty
Reference
Value
Rating
Tol
PCB Footprint
Manufacturer Part Number
X7R
1210
GRM32ER72A105KA01
C1210X7R101105K
Al Elec
thru hole
EEUFC2A120
100ME12AX
Panasonic
Sanyo
C3.5X8MM-RAD
EEUFM0J561
Panasonic
0805
GRM21BR60J226M
C0805X5R6R3226K
C0603
C0603X7R160-332K
1
3
C1,C3,C4
1 µF
100 V
2
1
C2
12 µF
12 µ
3
1
C5
560 µF
4
1
C6
22 µF
5
2
C7,C20
3.3 nF
6
1
C8
100 nF
16 V
X7R
1
C9
0.33 µF
16 V
X7R
8
C10,C11,C12,
C13,C14,C15,
C16,C17
1000 pF
100 V
10%
1
C18
0.1 µF
100 V
10%
X7R
0805
C0805X7R101104K
16 V
10%
X7R
71
10%
Dielectric
±20%
6.3 V
X5R
±10%
0805
Manufacturer
Murata
Murata
Venkel
Venkel
Venkel
C0805X7R160104K
C0805X7R160-334KNE
0603
Venkel
Venkel
Venkel
1
C19
150 pF
0805
C0805X7R160151K
Venkel
8
1
D1
PDS5100
PDI5
PDS5100
Diodes Inc.
9
1
J1
MagJack
RJ45
SI-52003-F
RJSE1R8090B-R
BelFuse Delta
10
2
J11,J12
CON1
101
Abbatron HH Smith
11
1
L1
33 µH
12
1
FB1
22 
13
4
L2,L3,L4,L5
330 
14
1
R1
330 
15
1
R2
49.9 k
16
1
17
1
R3
R4
6000 mA
L0805
Ferrite
100 V
MSS1278-333ML
Coilcraft
BLM21PG220SN1B
MuRata
0805
BLM21PG331SH1
Murata
0805
CR0805-10W3300F
Venkel
0805
CR0805-8W4992F
Venkel
30.9 
(Class 4)
0805
CR0805-10W-30R9F
Venkel
45.3 
(Class 3)
0805
CR0805-10W-45R3F
Venkel
25.5 k
0805
CR0805-10W2552F
Venkel
18
1
R5
2.87 k
0805
CR0805-10W2871F
Venkel
19
1
R6
8.66 k
0805
CR0805-10W8661F
Venkel
20
1
R7
30.1 k
0805
CR0805-10W3012F
Venkel
1
R8
0
0805
CR0805-000
Venkel
21
1
RLOAD
100 
22
1
U1
Si3402
242
8
D8,D9,D10,D11,
D12,D13,D14,
D15
S1B
5
J5,J6,J7,J8,J9
HEADER 1
23
Notes:
1.
2.
8
NI
1/2 W
±1%
1A
100 V
R1210
CR1210-2W-1000F
Venkel
5x5 QFN
Si3402
Silicon Labs
SMB
S1B
Diodes Inc.
Standard
C10–C17 are populated by default. See the “Surge” section in AN296 for more information.
Bypass diodes D8–D15 are populated for the Class 4 option.
Rev. 1.0
Si3402-EVB
5. BOM Options
The Si3402 non-isolated EVB has been compensated for eight different output voltage and filter combinations:

3.3 V output standard ESR 1000 µF 6.3 V filter
5 V output standard ESR 1000 µF 6.3 V filter
 9 output standard ESR 470 µF 16 V filter
 12 V output standard ESR 470 µF 16 V filter
 3.3 V output low ESR 560 µF 6.3 V filter
 5 V output low ESR 560 µF 6.3 V filter
 9 V output low ESR 330 µF 16 V filter
 12 V output low ESR 330 µF 16 V filter
For the standard ESR capacitor, the ESR increase at very low temperatures may cause a loop stability issue. A
typical evaluation board has been shown to exhibit instability under very heavy loads at –20 °C. Due to
self-heating, this condition is not a great concern. However, using a low ESR filter capacitor solves this problem
(but requires some re-compensation of the feedback loop). The low ESR capacitor also improves load transient
response and output ripple.

The Si3402 (non–isolated) EVB was designed with a very simple pole-zero compensation consisting of R7 and C7.
Capacitors C19 and C20 can be added in parallel with resistors R6 and R7 for optimized performance.
The standard evaluation board is shipped with C19 and is optimized for a standard ESR filter capacitor for 5 V
output.
The following table gives the options that have been tested for other situations.
R6
(To Adjust
Output Voltage)
Filter Cap C5
(Type FM are
Low ESR)
Filter Cap Part
Number
3.3 V
4.87 k
1000 µF, 6.3 V
3.3 V
4.87 k
5.0 V
VOUT
R7
C7
C19
C20
ECA0JM102
21 k
4.7 nF
150 pF
NP
560 µF, 6.3 V
EEUFM0J561
30.1 k
4.7 nF
150 pF
4.7 nF
8.66 k
100 0 µF, 6.3 V
ECA0JM102
30.1 k
3.3 nF
150 pF
NP
5.0 V
8.66 k
560 µF, 6.3 V
EEUFM0J561
30.1 k
3.3 nF
150 pF
3.3 nF
9.0 V
18.2 k
470 µF, 16 V
ECA1CM471
21 k
4.7 nF
150 pF
NP
9.0 V
18.2 k
330 µF, 16 V
EEUFM1C331
30.1 k
4.7 nF
150 pF
3.3 nF
12.0 V
24.9 k
470 µF, 16 V
ECA1CM471
30.1 k
3.3 nF
150 pF
NP
12.0 V
24.9 k
330 µF, 16 V
EEUFM1C331
30.1 k
3.3 nF
150 pF
3.3 nF
(Panasonic)
Rev. 1.0
9
Si3402-EVB
APPENDIX—SI3402 DESIGN AND LAYOUT CHECKLIST
Introduction
Although the EVB design is pre-configured as a Class 3 PD or Class 4 with a 5 V output, the schematics and
layouts can easily be adapted to meet a wide variety of common output voltages and power levels.
The complete EVB design databases for the standard 5 V/Class 3 configuration are located at
www.silabs.com/PoE under the “Documentation” link. Silicon Labs strongly recommends using these EVB
schematics and layout files as a starting point to ensure robust performance and avoid common mistakes in the
schematic capture and PCB layout processes.
Following are recommended design checklists that can assist in trouble-free development of robust PD designs.
Refer also to the Si3402 data sheet and AN296 when using the following checklists.
1. Design Planning Checklist:
a. Determine if your design requires an isolated or non-isolated topology. For more information, see
Section 4 of AN296.
b. To begin integrating the Si3402 into your schematics, download the schematic and layout database for
your particular isolation requirements from www.silabs.com/PoE.
c. Silicon Labs strongly recommends using the EVB schematics and layout files as a starting point as you
begin integrating the Si3402 into your system design process.
d. Determine your load’s power requirements (i.e., VOUT and IOUT consumed by the PD, including the
typical expected transient surge conditions). In general, to achieve the highest overall efficiency
performance of the Si3402, choose the highest voltage used in your PD and then post regulate to the
lower supply rails, if necessary.
e. If your PD design consumes >10 W, bypass the Si3402’s on-chip diode bridges with external diode
bridges or discrete diodes. Bypassing the Si3402’s on-chip diode bridges with external bridges or
discrete diodes is required to help spread the heat generated in designs dissipating >10 W.
f.
Based on your required PD power level, select the appropriate class resistor value by referring to Table 2
of AN296. This sets the Rclass resistor (R3 in Figure 1 on page 2).
2. Calculate design-specific external components (for all designs that are not for a 5 V, Class 3 output
configuration):
a. To help guide the selection of the other application-specific external component values needed for your
design’s isolation requirements, access the Excel spreadsheet utility at the following address:
https://www.silabs.com/products/power/poe/Pages/default.aspx
i. Use the “Non-isolated” worksheet if your design is intended for a non-isolated output supply.
ii. Use either the “Isolated Continuous” or the “Isolated Discontinuous” worksheets if your design is
for an isolated output supply (“continuous” versus “discontinuous” mode is determined by the
current value calculated in cell H11 of the spreadsheet).
b. If your design is a 5 V output Class 3 design, you do not need to change any external components.
c. To avoid potential performance issues for non 5 V output configurations, Silicon Labs strongly
recommends using the exact components and component values shown and calculated in the Excel
worksheets.
10
Rev. 1.0
Si3402-EVB
d. Begin entering your design targets in cells B9 through B13 of the worksheet:
i. If appropriate, select the on-chip “diode bypass” option in cell B9 in the Excel spreadsheet utility.
By entering a “1” in this cell, the Si3402’s on-chip diodes are assumed to be bypassed with
external diode bridges in your schematic. A “0” in this cell means the Si3402’s on-chip diode
bridges will be used.
ii. Enter VIN into cell B10. This voltage is the input voltage at the diode bridge output, which is 2 to
3 V less than the PSE input voltage or, typically, 46 V.
iii. Enter your design’s desired output current, IO, in amperes, into cell B11.
iv. Enter your design’s desired output voltage, VO, in volts, into cell B12.
v. Enter your design’s maximum ambient operating temperature in °C into cell B13.
e. If you are using the “Non-isolated” worksheet:
i. The feedback resistor network values (R5 and R6) for your design are calculated and displayed in
cells G13 and G12. Use these resistor values to update your schematic.
ii. To use the default diode and inductor components used in the Si3402-EVB non-isolated
schematic, Silicon Labs strongly recommends leaving each default values “as-is” in cells B15
through B18.
iii. To ensure your design is operating within the acceptable operating ranges for all the external
components used in your schematic, carefully review the calculated values found in cells B20
through B27.
iv. Carefully review the calculated values in the Summary section (cells B29 through B33).
1. Cell B29: PSE input voltage. Make sure the PSE input voltage is compatible with the PSE
intended to power your PD.
2. Cell B30: PSE input power. If the power is >12.95 W (more than the IEEE 802.3af limits),
then this cell is shaded in light RED and your PSE must be capable of sourcing the power
level shown in cell B30.
3. Cell B33: If the calculated junction temperature is >140 °C, this cell is shaded in light red.
Consider bypassing the on-chip diodes to lower the effective junction temperature, or
consider reducing the output current (if possible). Other inputs in cells B9 through B13 may
also need to be adjusted to lower the calculated junction temperature.
f.
If you are using either of the “Isolated” worksheets, enter the input values to determine if your design will
be operating in the “continuous” or “discontinuous mode”:
i. Check the value of the current calculated in cell H11.
1. If your desired output current (B11) is less than the value shown in cell H11, use the
“Isolated Discontinuous” worksheet.
2. If your desired output current (B11) is greater than the value shown in cell H11, use the
“Isolated Continuous” worksheet.
ii. The feedback resistor network values (R5 and R6) for your design are calculated and displayed in
cells E12 and E13. Use these resistor values to update your schematic.
iii. Select transformer turns ratio: use 3.3, 2.5, or 1 as standard choices for 3.3, 5, and 12 V output,
respectively. Leave the rest of the options as defaults. If you have different output voltage, contact
Silicon Labs for recommendations.
iv. To use the default transformer, snubber, and diode components used in the Si3402ISO-EVB
isolated schematic, Silicon Labs strongly recommends leaving each default values “as-is” in cells
B15 through B23. Always select the EP13 core if you require short-circuit protection.
v. To ensure your design is operating within the acceptable operating ranges for all the external
components used in your schematic, carefully review the calculated values found in cells B25
through B35.
Rev. 1.0
11
Si3402-EVB
vi. Carefully review the calculated values in the Summary section (cells B37 through B41):
1. Cell B37: PSE input voltage. Make sure the PSE input voltage is compatible with the PSE
intended to power your PD.
2. Cell B38: PSE input power. If the power is >12.95 W (more than the IEEE 802.3af limits),
then this cell is shaded in light red, and your PSE must be capable of sourcing the power
level shown in cell B30.
3. Cell B41: If the calculated junction temperature is >140 °C, then this cell is shaded in light
red. Consider bypassing the on-chip diodes to lower the effective junction temperature, or
consider reducing the output current (if possible). Other inputs in cells B9 through B13 may
also need to be adjusted to lower the calculated junction temperature.
3. General design checklist items:
a. ESD caps (C10–C17 in Figure 1) are strongly recommended for designs where system-level ESD
(IEC6100-4-2) must provide >15 kV tolerance.
b. Never disable the soft start features. Make sure the soft start capacitor is in your schematics and
connected correctly.
c. If your design uses an AUX supply, be sure to include a 3  surge limiting resistor in series with the AUX
supply for hot insertion. Refer to AN296 when AUX supply is 48 V.
d. Silicon Labs strongly recommends the inclusion of a minimum load (250 mW) to avoid switcher pulsing
when no load is present and to avoid false disconnection when less than 10 mA is drawn from the PSE.
If your load is not at least 250 mW, add a resistor load to dissipate at least 250 mW.
e. If using PLOSS function, make sure it’s properly terminated for connection in your PD subsystem. If
PLOSS is not needed, float this pin.
4. Layout guidelines:
a. Make sure VNEG pin of the Si3402 is connected to the backside of the QFN package with an adequate
thermal plane, as noted in the data sheet and AN296.
b. Keep the trace length from connecting to SWO and retuning to Vss1 and Vss2 as short as possible.
Make all of the power (high current) traces as short, direct, and thick as possible. It is a good practice on
a standard PCB board to make the traces an absolute minimum of 15 mils (0.381 mm) per Ampere.
c. Usually, one standard via handles 200 mA of current. If the trace needs to conduct a significant amount
of current from one plane to the other, use multiple vias.
d. Keep the circular area of the loop from the Switcher FET output to the inductor or transformer and
returning from the input filter capacitors (C1–C4) to Vss1 and Vss2 as small a diameter as possible.
Also, minimize the circular area of the loop from the output of the inductor or transformer to the Schottky
diode and returning through the first stage output filter capacitor back to the inductor or transformer as
small as possible. If possible, keep the direction of current flow in these two loops the same.
e. Connect the sense points to the output terminals directly to avoid load regulation issues related to IR
drops in the PSB traces. For the non-isolated case, the sense points are Vposs, and the sense resistor is
R6. For the non-isolated case, the sense points are R5, and the TLV431 is pin 3.
f.
Keep the feedback and loop stability components as far from the transformer/inductor and noisy power
traces as possible.
g. If the outputs have a ground plane or positive output plane, do not connect the high current carrying
components and the filter capacitors through the plane. Connect them together, and then connect to the
plane at a single point.
h. As a convenience in layout, please note that the IC is symmetrical with respect to CT1, CT2, SP1, and
SP2. These leads can be interchanged.
To help ensure first-pass success, submit your schematics and layout files to [email protected] for review.
Other technical questions may be sent to this e-mail address as well.
12
Rev. 1.0
Si3402-EVB
DOCUMENT CHANGE LIST
Revision 0.82 (Si3400/1/2-EVB)
to Revision 1.0 (Si3402-EVB)
Revision 0.4 to Revision 0.5

Added Si3402-C4-EVB.
 Removed Si3400/1/2 as the Si3402 replaces these.

Updated layout to Revision 1.1.
 Updated BOM for Revision C Si3400.
Revision 0.5 to Revision 0.6

Updated layout to Revision 1.2.
 Updated BOM for Revision D Si3400/01.
 Added Si3401.
Revision 0.6 to Revision 0.7

Updated Figure 1, “Si3402 Schematic—5 V, Class 3
PD,” on page 2 to include ISOSSFT (pin 4) for the
isolated mode soft start feature (for revisions
beginning with Rev. E), Vssa support and ESD
improvements.
 Updated "4. Bill of Materials‚" on page 8 per
schematic.
Revision 0.7 to Revision 0.8











Updated "2. Si3402 Board Interface‚" on page 1.
Updated "3. Schematics‚" on page 1.
Updated Figure 1, “Si3402 Schematic—5 V, Class 3
PD,” on page 2 to include ISOSSFT (pin 4) for the
isolated mode soft start feature (for revisions
beginning with Rev. E), Vssa support and ESD
improvements.
Updated Figure 2, “Top Silkscreen,” on page 3.
Updated Figure 3, “Top Layer,” on page 4.
Updated Figure 4, “Internal 1,” on page 5.
Updated Figure 5, “Internal 2,” on page 6.
Updated Figure 6, “Bottom Layer,” on page 7.
Updated "4. Bill of Materials‚" on page 8 per
schematic.
Added "5. BOM Options‚" on page 9.
Added " Appendix—Si3402 Design and Layout
Checklist‚" on page 10.
Revision 0.8 to Revision 0.81

Changed C8 to C5 in the third column heading of the
table on page 6.
Revision 0.81 to Revision 0.82

Changed document title from Si3400/Si3401-EVB to
Si3400/1/2-EVB.
 Updated Figure 1, “Si3402 Schematic—5 V, Class 3
PD,” on page 2.
 Updated "4. Bill of Materials‚" on page 8.
 Updated silkscreen layers in Figures 2 through 6.
Rev. 1.0
13
Si3402-EVB
CONTACT INFORMATION
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14
Rev. 1.0