ROHM RSB5.6SM

Data Sheet
Bi direction ESD Protection Diode
RSB5.6SM
lApplications
ESD Protection
lDimensions (Unit : mm)
1.60.1
1.20.05
1.7
lFeatures
1)Ultra small mold type. (EMD2)
2)Bi direction high reliability.
3)High reliability.
4)By chip-mounter,automatic mounting
is possible.
lConstruction
Silicon epitaxial planar
0.8
0.120.05
0.6
0.80.05
lLand size figure (Unit : mm)
EMD2
0.30.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
dot (productNo.)
lStructure
0.60.1
lTaping dimensions (Unit : mm)
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Peak pulse power(tp=10×1000μs)
Ppk
Power dissipation
P
Junction temperature
Tj
Storage temperature
Tstg
Operation temperature range
Topor
lElectrical characteristics (Ta=25C)
Parameter
Symbol
Vz
Zener voltage
Limits
10
150
150
-55 to +150
-55 to +150
Unit
W
mW
C
C
C
Min.
Typ.
Max.
Unit
4.76
-
6.44
V
IZ=1mA
VR=2.5V
VR=0V , f=1MHz
Reverse current
IR
-
-
1.0
μA
Capacitance between terminals
Ct
-
50.0
-
pF
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1/4
Conditions
2011.10 - Rev.A
Data Sheet
RSB5.6SM
10
10
apply voltage
apply voltage
Ta=125°C
ZENER CURRENT:Iz(mA)
ZENER CURRENT:Iz(mA)
1
Ta=75°C
0.1
Ta=25°C
0.01
Ta=-25°C
0.001
1
Ta=125°C
0.1
Ta=75°C
0.01
Ta=-25°C
0.001
2
3
4
5
6
2
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(1)
3
4
5
6
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(2)
10000
10000
apply voltage
apply voltage
1000
REVERSE CURRENT:IR (nA)
1000
REVERSE CURRENT:IR (nA)
Ta=25°C
100
Ta=125°C
10
1
0.1
Ta=75°C
0.01
100
1
Ta=75°C
0.1
Ta=25°C
0.01
Ta=25°C
0.001
Ta=125°C
10
0.001
0.0001
0.0001
0
1
2
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS(1)
3
0
100
1
2
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS(2)
3
100
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
apply voltage
10
apply voltage
10
0
1
2
3
4
0
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© 2011 ROHM Co., Ltd. All rights reserved.
1
2
3
4
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(2)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(1)
2/4
2011.10 - Rev.A
Data Sheet
RSB5.6SM
6.0
120
5.5
AVE:5.437V
AVE:5.486V
5.0
4.5
apply voltage
apply voltage
Ta=25°C
VR=2.5V
n=30pcs
110
REVERSE CURRENT:IR(nA)
ZENER VOLTAGE:Vz(Ｖ)
Ta=25°C
IZ=1mA
n=30pcs
AVE:114.0nA
100
90
AVE:96.0nA
apply voltage
4.0
70
IR DISPERSION MAP
Vz DISPERSION MAP
10000
100
Ta=25°C
f=1MHz
VR=0V
n=10pcs
90
80
DYNAMIC IMPEDANCE:Zz(Ω)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
apply voltage
80
70
60
50
AVE：53.70pF
40
AVE：51.38pF
30
apply voltage
apply voltage
1000
100
apply voltage
20
10
10
0
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(1)
Ct DISPERSION MAP
1000
10000
TRANSIENT
THERMAL IMPEDANCE：Rth (°C/W)
On glass-epoxy substrate
DYNAMIC IMPEDANCE:Zz(Ω)
10
1000
100
apply voltage
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(2)
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© 2011 ROHM Co., Ltd. All rights reserved.
Rth(j-c)
100
10
0.001
10
10
Rth(j-a)
0.01
0.1
1
10
100
1000
TIME(s)
Rth-ｔ CHARACTERISTICS
3/4
2011.10 - Rev.A
Data Sheet
RSB5.6SM
30
30
No break at 30kV
No break at 30kV
25
20
15
AVE：10.0kV
apply voltage
10
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
25
5
0
20
15
AVE：9.35kV
apply voltage
10
5
C=200pF
R=0Ω
C=150pF
R=330Ω
0
C=100pF
R=1.5kΩ
ESD DISPERSION MAP(1)
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© 2011 ROHM Co., Ltd. All rights reserved.
C=200pF
R=0Ω
C=150pF
R=330Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP(2)
4/4
2011.10 - Rev.A
Notice
Notes
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R1120A