Data Sheet Bi direction ESD Protection Diode RSB33V Applications ESD Protection Dimensions (Unit : mm) Land size figure (Unit : mm) 0.1±0.1 0.05 0.9MIN. 0.8MIN. 1.25±0.1 2.5±0.2 1.7±0.1 2.1 Features 1)Small mold type. (UMD2) 2)High reliability. 3)Bi-directionality. UMD2 Constructions Silicon epitaxial planer 0.7±0.2 0.1 0.3±0.05 Structure ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) Taping dimensions (Unit : mm) 0.3±0.1 φ1.55±0.05 2.0±0.05 4.0±0.1 1.40±0.1 2.8±0.1 2.75 8.0±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation Pd Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol VZ Zener voltage Reverse current Junction capacitance Limits 200 150 Unit mW °C °C −55 to +150 Min. Typ. Max. Unit 29.7 - 36.3 V IZ=1mA Conditions IR - - 0.1 μA Ct - - 30 pF VR=25V VR=0V , f=1MHz *Zener voltage (Vz)shall be measured at 40ms after loading current. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A Data Sheet RSB33V 10 10 apply voltage apply voltage ZENER CURRENT:Iz(mA) ZENER CURRENT:Iz(mA) Ta=150°C 1 Ta=150°C Ta=25°C Ta=125°C Ta=−25°C 0.1 1 Ta=125°C Ta=25°C 0.1 Ta=75°C Ta=−25°C Ta=75°C 0.01 0.01 25 30 35 40 45 25 30 1000 45 Ta=150°C Ta=150°C 100 REVERSE CURRENT:IR (nA) 100 REVERSE CURRENT:IR (nA) 40 1000 apply voltage 10 Ta=125°C 1 0.1 Ta=75°C 0.01 Ta=125°C 10 1 Ta=75°C 0.1 Ta=25°C apply voltage 0.01 Ta=25°C 0.001 0.001 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(1) 30 0 100 5 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(2) 25 30 100 apply voltage f=1MHz apply voltage f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 35 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2) ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(１) 10 1 10 1 0 5 10 15 20 25 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1) 2/4 2011.11 - Rev.A Data Sheet RSB33V 40 10 Ta=25°C IZ=1mA n=30pcs ZENER VOLTAGE:Vz(V) 36 34 32 30 AVE:32.73V 28 AVE:34.52V 26 apply voltage Ta=25°C VR=25V n=30pcs 9 REVERSE CURRENT:IR(nA) 38 apply voltage 8 7 5 4 AVE:1.38nA 3 24 2 22 1 20 0 AVE:0.39nA IR DISPERSION MAP Vz DISPERSION MAP 10000 10 9 8 DYNAMIC IMPEDANCE:Zz(Ω) CAPACITANCE BETWEEN TERMINALS:Ct(pF) apply voltage apply voltage 6 Ta=25°C f=1MHz VR=0V n=20pcs 7 6 5 AVE：9.07pF 4 3 apply voltage AVE：8.86pF apply voltage 1000 100 apply voltage 2 1 10 0 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) Ct DISPERSION MAP 1000 1000 TRANSIENT THERMAL IMPEDANCE：Rth(°C/W) On glass-epoxy substrate DYNAMIC IMPEDANCE:Zz(Ω) 10 100 10 apply voltage 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 100 Rth(j-c) 10 1 0.001 1 10 Rth(j-a) 0.01 0.1 1 10 100 1000 TIME(s) Rth-t CHARACTERISTICS 3/4 2011.11 - Rev.A Data Sheet RSB33V 30 30 No break at 30kV No break at 30kV 25 AVE：26.5kV 20 15 AVE：6.3kV 10 apply voltage ELECTROSTATIC DISCHARGE TEST ESD [kV] ELECTROSTATIC DISCHARGE TEST ESD [kV] 25 5 0 20 15 AVE：8.9kV 10 apply voltage 5 C=200pF R=0Ω C=150pF R=330Ω 0 C=100pF R=1.5kΩ ESD DISPERSION MAP(1) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP(2) 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A