Data Sheet Bi direction ESD Protection Diode RSB39F2 Applications ESD Protection Dimensions (Unit : mm) Land size figure (Unit : mm) 1.3 2.0±0.2 0.3±0.1 2.1±0.1 1.25±0.1 0.65 0.9MIN. Features 1)Small mold type. (UMD3) 2)High reliability. 3)Bi-directionality. 0.15±0.05 (3) 1.6 各リードとも Each lead has same dimension 同寸法 0.8MIN. (2) 0.1Min 0～0.1 (1) （0.65） （0.65） 1.3±0.1 Constructions Silicon epitaxial planer UMD3 0.7±0.1 0.9±0.1 Structure ROHM : UMD3 JEDEC : SOT-323 JEITA : SC-70 dot(year week factory) Taping dimensions (Unit : mm) φ1.55±0.05 2.0±0.05 0.3±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation (*) Pd Junction temperature Tj Storage temperature Tstg (*) Total two elements Electrical characteristics (Ta=25°C) Parameter Symbol VZ Zener voltage Reverse current Junction capacitance φ0.5±0.05 4.0±0.1 Limits 200 150 2.4±0.1 8.0±0.2 0～0.1 2.4±0.1 2.25±0.1 0 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 1.25±0.1 Unit mW °C °C −55 to +150 Min. Typ. Max. Unit 35.1 - 42.9 V IZ=1mA VR=30V VR=0V , f=1MHz IR - - 0.1 μA Ct - - 30 pF Conditions * Zener voltage (Vz) shall be measured at 40ms after loading current. Rating of per diode. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A Data Sheet RSB39F2 10 10 apply voltage ZENER CURRENT:Iz(mA) ZENER CURRENT:Iz(mA) apply voltage Ta=150°C 1 Ta=75°C 0.1 Ta=125°C Ta=25°C 1 Ta=150°C Ta=75°C Ta=125°C 0.1 Ta=25°C Ta=−25°C Ta=−25°C 0.01 0.01 25 30 35 40 45 25 30 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) 35 40 45 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2) 10000 apply voltage 10000 apply voltage Ta=150°C 1000 REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR (nA) 1000 Ta=150°C 100 10 Ta=125°C 1 100 Ta=125°C 10 Ta=75°C 1 Ta=75°C 0.1 0.1 Ta=25°C Ta=25°C 0.01 0.01 0 5 10 15 20 25 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(1) 30 0 100 10 15 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(2) 25 30 100 f=1MHz f=1MHz apply voltage CAPACITANCE BETWEEN TERMINALS:Ct(pF) apply voltage CAPACITANCE BETWEEN TERMINALS:Ct(pF) 5 10 1 10 1 0 5 10 15 20 25 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1) 2/4 2011.11 - Rev.A Data Sheet RSB39F2 40 10 Ta=25°C IZ=1mA n=30pcs ZENER VOLTAGE:Vz(V) 38 8 37 36 35 34 AVE:37.55V AVE:35.59V 33 apply voltage 32 Ta=25°C VR=30V n=30pcs 9 REVERSE CURRENT:IR(nA) 39 apply voltage 7 apply voltage 5 AVE:2.15nA 4 AVE:0.84nA 3 2 31 1 30 0 IR DISPERSION MAP Vz DISPERSION MAP 100000 Ta=25°C f=1MHz VR=0V n=20pcs 9 apply voltage DYNAMIC IMPEDANCE:Zz(Ω) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 8 7 6 AVE：8.55pF AVE：8.53pF apply voltage apply voltage 10000 1000 100 10 1 5 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) Ct DISPERSION MAP 10 1000 100000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE：Rth(°C/W) apply voltage DYNAMIC IMPEDANCE:Zz(Ω) apply voltage 6 10000 1000 100 10 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 3/4 Rth(j-c) 10 1 0.001 1 0.1 100 Rth(j-a) 0.01 0.1 1 10 TIME(s) Rth-t CHARACTERISTICS 100 1000 2011.11 - Rev.A Data Sheet RSB39F2 30 30 No break at 30kV No break at 30kV 25 AVE：25.5kV 20 15 10 AVE：6.1kV apply voltage ELECTROSTATIC DISCHARGE TEST ESD [kV] ELECTROSTATIC DISCHARGE TEST ESD [kV] 25 5 0 20 15 10 AVE：6.9kV apply voltage 5 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ 0 ESD DISPERSION MAP(1) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP(2) 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A