ROHM 1SS355VM

Data Sheet
Switching Diode
1SS355VM
lDimensions (Unit : mm)
0.1±0.1
0.05
1.7±0.1
lFeatures
1)Ultra small mold type.（UMD2）
2)High reliability
0.9MIN.
2.5±0.2
0.8MIN.
1.25±0.1
lLand size figure (Unit : mm)
2.1
lApplications
High frequency switching
UMD2
lConstruction
Silicon epitaxial planer
0.7±0.2
0.1
0.3±0.05
lStructure
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
lTaping dimensions (Unit : mm)
φ 1.55±0.05
2.0±0.05
0.3±0.1
8.0±0.2
2.75
φ 1.05
4.0±0.1
1.40±0.1
2.8±0.1
3.5±0.05
1.75±0.1
4.0±0.1
1.0±0.1
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive peak)
VR
Reverse voltage (DC)
IFM
Forward current
average rectified forward current
Io
Isurge
Surge current (t=1s)
Junction temperature
Tj
Storage temperature
Tstg
lElectrical characteristics (Tj=25C)
Parameter
Symbol
VF
Forward voltage
Limits
90
80
225
100
500
150
Unit
V
V
mA
mA
mA
C
C
-55 to +150
Min.
Typ.
Max.
Unit
-
-
1.2
V
IF=100mA
Conditions
Reverse current
Capacitance between terminals
IR
-
-
0.1
μA
VR=80V
Ct
-
-
3
pF
Reverse recovery time
trr
-
-
4
ns
VR=0.5V , f=1MHz
VR=6V , IF=10mA , RL=100Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.12 - Rev.A
Data Sheet
1SS355VM
100
10000
1000
10
REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
Ta=125°C
Ta=125°C
Ta=75°C
1
Ta=25°C
0.1
Ta=-25°C
Ta=75°C
100
Ta=25°C
10
1
0.01
Ta=-25°C
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
20
40
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
10
80
910
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
60
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
Ta=25°C
IF=100mA
n=30pcs
900
890
880
870
AVE:875.6mV
860
0.1
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
100
Ta=25°C
VR=80V
n=30pcs
80
70
60
50
40
AVE:18.8nA
30
Ta=25°C
VR=0.5V
f=1MHz
n=10pcs
0.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
90
20
0.7
AVE:0.817pF
0.5
0.3
10
0
0.1
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/4
2011.12 - Rev.A
Data Sheet
1SS355VM
20
6
PEAK SURGE
FORWARD CURRENT:IFSM(A)
15
REVERSE RECOVERY TIME:trr(ns)
1cyc
IFSM
8.3ms
10
AVE:3.62A
5
Ta=25°C
VR=6V
IF=10mA
RL=100Ω
5
4
3
AVE:3.06ns
2
1
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
10
15
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
IFSM
PEAK SURGE
FORWARD CURRENT:IFSM(A)
8.3ms 8.3ms
1cyc
t
10
5
0
1
1
10
0.1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
100
Rth(j-a)
100
Rth(j-c)
10
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.20
1000
1
0.001
1
D=1/2
0.10
Sin(θ＝180)
DC
0.00
0.1
10
1000
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
3/4
2011.12 - Rev.A
Data Sheet
1SS355VM
0.20
0.001
0.0009
REVERSE POWER
DISSIPATION:PR(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
DC
0.0008
DC
0.0007
0.0006
0.0005
D=1/2
0.0004
Sin(θ＝180)
0.0003
0.15
D=1/2
0.10
Sin(θ＝180)
0.05
0.0002
0A
Io
0V
VR
t
0.0001
T
0
D=t/T
VR=40V
Tj=150°C
0.00
0
20
40
60
80
0
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
20
15
AVE:9.0kV
10
5
AVE:1.8kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.12 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A