E910.99 PIR Light Controller for DC/AC Applications Features Brief Functional Description • Digital signal processing • On chip supply regulator with wide operating voltage range • Low power consumption • Temperature compensation input • Adjustable soft on/off switching (fading) • Dimmer function • PWM output • Open Drain high voltage relay output Suitable for DC and AC applications • Applications • Battery operated lights • Solar powered garden lights • Outdoor and indoor motion sensor lights • High end lighting switches • Automatic bedroom night lights • Energy saving The integrated circuit E910.99 combines all required functions for a single chip Passive Infra Red (PIR) light controller. It is designed for load switching with a transistor or a relay in 3 wire AC and DC systems. A conventional PIR sensor connects directly to the PIR input. The pull-down resistor and DC decoupling circuitry are integrated on chip. The PIR signal is converted to a 15 bit digital value. All signal processing is performed digitally. External potentiometers or resistors are used to set the operating parameters for sensitivity, on-time, brightness, fade, daylight sensor and environment temperature correction. The corresponding voltage levels are converted to digital values with a 4 bit resolution. Those features and the minimum demand on external components makes the E910.99 most suitable for all PIR sensor light applications Application Circuit for a DC Sensor Light ELMOS Semiconductor AG Specification 1 / 15 03SP0343E.01 08.11.2006 E910.99 1 Pinout 1.1 Pin Description Name Pin No. Description BRIGHT 1 Brightness adjustment FADE 2 Fade time adjustment SENS 3 Sensitivity threshold adjustment ON-TIME 4 Light on-time adjustment TCOMP 5 Temperature compensation input DARK 6 Dark mode input, connected to LDR/Photodiode SWIN 7 ON-AUTO-OFF select input LMODE 8 LED mode select VB 9 Supply voltage input VDDA 10 Analog supply TEST 11 Reserved test mode, has to be connected to VSS TOG 12 Reserved test mode (TOG), has to be connected to VSS RETRIG 13 Retrigger mode select input PIRIN 14 PIR sensor input VSSA 15 Analog ground VSS 16 Digital ground RELAY 17 Relay output pin PWM 18 Light output (PWM) VDD 19 Digital VDD VSW 20 Voltage sense input 1.2 Package Pinout 1 20 2 19 3 18 ON-TIME TCOMP DARK SWIN LMODE VB VDDA 4 5 6 E910.99 BRIGHT FADE SENS 17 16 15 7 14 8 13 9 12 10 11 VSW VDD PWM RELAY VSS VSSA PIRIN RETRIG TOG TEST Figure 1.2-1: Pinout ELMOS Semiconductor AG Specification 2 / 15 03SP0343E.01 08.11.2006 E910.99 2 Operating Conditions 2.1 Absolute Maximum Ratings Parameter Condition Symbol Min. Max. Unit VB -0.3 60 V Voltage on pin RELAY VREL -0.3 VB V Voltage on any other pin Vmax -0.3 7 V Iin -100 100 mA 150 °C 150 °C Voltage on pin VB Current into any pin One pin at a time Junction Temperature TJ Storage Temperature TSTG Thermal Resistance (Junction – Ambient) 2) ΘJA 85,2 K/W ESD VESD 2,0 kV 1) - 55 Table 2: Electrical Characteristics 1) Test method: MIL-STD-883D method 3015) with CC= 100pF and RS=1,5kΩ 2) Generic value, application dependant Stresses beyond those listed above may cause permanent damage to the device. Exposure to absolute maximum ratings may affect the device reliability. 2.2 Recommended Operating Conditions Parameters are guaranteed within the range of operating conditions unless otherwise specified. Parameter Condition Symbol Min. Typ Max. Unit -40 85 °C 5 48 V Temperature Operating temperature range Regulator Supply voltage VB Table 3: Operating Conditions ELMOS Semiconductor AG Specification 3 / 15 03SP0343E.01 08.11.2006 E910.99 3 Detailed Electrical Specification Parameters are guaranteed within the range of operating conditions unless otherwise specified. Parameter Condition Symbol Min. Typ Max. Unit 200 µA 4.4 V 20 %VDD Regulator VB=12V Outputs unloaded Supply current Regulator output voltage IB VDD 3.6 4 Digital Inputs, Schmitt Triggers (TEST, TOG, RETRIG, DARK, SWIN, LMODE, VSW) Input low voltage VIL Input high voltage VIH 80 %VDD Pull down current on TEST, TOG Input to VDD 140 µA Pull up current on RETRIG Input to VSS 60 µA Leakage current on DARK, LMODE Input to VSS or VDD ±1 µA Pull up / pull down scanning current on SWIN Input to VSS or VDD 300 µA 60 %VDD Input VSW low voltage VIL Input VSW high voltage VIH 90 %VDD 20 mA Digital Outputs RELAY sink capability (open drain) VREL < 1V IOL PWM Output low voltage Isource = 5mA VOL PWM Output high voltage Isink = 2mA VOH 10 90 %VDD %VDD Analog Inputs Input leakage current (ON-TIME, SENS, FADE, BRIGHT, TCOMP) -1 PIRIN resistance to VSS PIRIN input AC voltage PIRIN input DC voltage Peak to Peak Per threshold count µA 70 kΩ 100 mV VSS 2) PIRIN resolution 1 VDD V 14 µV Oscillator and Filter LPF cutoff frequency 1) 7 Hz HPF cutoff frequency 1) 0.44 Hz 64 kHz Clock frequency FCLK Table 4: Detailed Electrical Specification 1) Guaranteed by Design, not tested within production. 2) Characterisation value, not tested within production. All voltages are referred to VSS; currents are positive when flowing into the node unless otherwise specified. ELMOS Semiconductor AG Specification 4 / 15 03SP0343E.01 08.11.2006 E910.99 4 Functional Description The IC E910.99 is a fully integrated PIR motion detector. It is designed for sensor light applications with a minimum of external components. The PIR sensors is connected directly to the IC. Due to the digital signal processing, the 910.99 is insensitive to electromagnetic interferences. The operating parameters for sensitivity, on-time, etc., are adjusted by DC voltages connected to the corresponding pins. The IC includes an open collector output (RELAY), which can directly drive a relay for different loads. A PWM output is provided for loads like LEDs or bulbs. In this case, brightness and fade can be adjusted to user's requirements. The also integrated temperature compensation allows a sensitivity correction depending on the environment temperature. Those features and the minimum demand on external components makes the E910.99 most suitable for all PIR sensor light applications. DARK VS W V DD SW IN V DDA LMOD E 4.1 Blockdiagram D riv e r P I R IN In put A m plifier A /D C onv erter P WM P WM D riv er B an d P ass F ilter Relay D riv e r P aram eters C ontroller RE LA Y SEN S B RI G H T VB V olta ge Reg ulato r A DC O scillator FA DE O N -T I M E RE TRIG TOG TE ST VS S VS SA TC O M P Figure 4.1-1: Block Diagram 4.2 Voltage Regulator An on-chip voltage regulator generates a stable 4V supply for the internal circuitry. The unregulated input voltage on VB can range from 5V to 48V. The VDD and VB pin require a bypass capacitor to VSS. 4.3 Oscillator The IC contains an on-chip low power oscillator. The frequency is set to 64kHz. The timing signals and cut-off frequencies of the digital filters are derived from this frequency. ELMOS Semiconductor AG Specification 5 / 15 03SP0343E.01 08.11.2006 E910.99 4.4 PIR Sensor Input The PIRIN input has an internal pull-down resistor. The analog to digital converter generates a digital signal from the voltage level measured on the PIRIN pin. 4.5 Band-Pass Filter A 2nd order low-pass filter with a cut-off frequency of 7Hz eliminates unwanted higher frequency components. This signal is then passed to a 2nd order high pass filter with a 0.44Hz cut-off frequency. 4.6 Parameter Settings 5 different parameters can be set by changing the voltages on these pins between VSS and VDD*7/32. 4.6.1 SENS Sets the sensitivity threshold required to generate a trigger condition. Refer to table 5. One count represents 14uV PIR voltage. 4.6.2 BRIGHT Sets the maximum brightness of the light connected to the PWM output. The brightness levels are divided into 15 steps. Maximum brightness occurs at a pin voltage of 15/64*VDD. 4.6.3 FADE Sets the time it takes to switch the light on or off (soft dimming). Refer to table 5. 4.6.4 ON-TIME Sets the time for the light to remain on. Refer to table 5. Pin voltage/ VDD 7/32 6/32 5/32 4/32 3/32 2/32 1/32 0/32 On time (s) 2048 1024 512 256 128 64 32 8 Fade time (s) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 SENS threshold 128 64 32 16 8 4 2 1 Table 5: On-time and Fade-time ELMOS Semiconductor AG Specification 6 / 15 03SP0343E.01 08.11.2006 E910.99 4.6.5 TCOMP Temperature compensation input pin. A temperature dependent resistor network may be connected to this pin to generate voltages between VDD*16/128 and VDD*31/128. The voltage on this pin must decrease as the temperature increases. At 37°C, the voltage should be between VDD*19/128 and VDD*20/128. Internally, a TCOMP factor is selected, based on this pin voltage. This TCOMP factor is multiplied with the sensitivity threshold. Table 4 shows the relationship between TCOMP pin voltage and the TCOMP factor used by the threshold comparator. The TCOMP input may be connected to VSS if the application does not require a temperature compensation function. Pin voltage/ VDD <16/128 17/128 18/128 19/128 20/128 21/128 22/128 23/128 TCOMP factor 7/8 6/8 5/8 4/8 4/8 5/8 6/8 7/8 Pin voltage/ VDD 24/128 25/128 26/128 27/128 28/128 29/128 30/128 >31/128 TCOMP Factor 8/8 9/8 10/8 11/8 12/8 13/8 14/8 15/8 Table 6: Temperature compensation factor 4.7 PWM and RELAY output drivers By using the pin RELAY any desired load can be switched ON and OFF with an external relay. The RELAY output is designed as an open collector. When fading and brightness control are desired, the PWM output must be used. An external transistor is normally required to switch the load current. The light intensity versus PWM ratio is different for an LED than an incandescent light, as indicated in the figure below. Light intensity LED Incandescent % PWM ratio Figure 4.7-1: Light intensity For this reason, the PWM steps are different when setting the LMODE high (for LED's) or low (for incandescent). ELMOS Semiconductor AG Specification 7 / 15 03SP0343E.01 08.11.2006 E910.99 4.8 VSW input The VSW input may be used to sense a slow charging relay supply voltage before enabling the outputs of the device. The RELAY and PWM outputs becomes active when the VSW > 0.9 * VDD. RELAY and PWM outputs becomes inactive when the VSW < 0.6 * VDD. 4.9 Controller: Modes of Operation The operating modes are determined by four digital inputs. The digital inputs can be connected to VDD, VSS or some can be left floating, as indicated below. Pin Name Description SWIN Selects the ON-AUTO-OFF modes. VDD: light permanently ON VSS: light permanently OFF RETRIG Floating: PIR sensor mode (AUTO) Re-trigger Mode VDD or floating: The timer for the on-time is restarted whenever movement is detected. DARK 1) VSS: The light will stay on for the on-time. Movement detection is ignored during this period. Typically connected to a Light Dependant Resistor (LDR) or photo transistor, to prevent the light from switching on during daylight conditions. The Pin is designed as a “Schmitt Trigger” input: * Voltages on Pin DARK of V > 3/4VDD indicated as “dark” (night) * Voltages on Pin DARK of V < 1/4VDD are indicated as “not dark” (day) Do not leave this input floating. Table 7: Operational parameters 1) DARK is ignored when the light is ON in PIR sensor mode (AUTO mode). 4.10 Operation 4.10.1 Power-up Mode Whenever the circuit is powered up, the light is switched on for the selected on-time duration. The DARK input is ignored on power-up, to allow the user to verify the installation during daylight conditions. 4.10.2 Trigger condition The SENS threshold (refer to table 5) is multiplied with the TCOMP factor (refer to table 6), to obtain a temperature dependent threshold. When the filtered PIR signal exceeds this threshold, a trigger condition occurs. ELMOS Semiconductor AG Specification 8 / 15 03SP0343E.01 08.11.2006 E910.99 4.10.3 Conditions for Switching the Light ON (AUTO mode) If a trigger condition occurs and the the voltage at the DARK input is higher than ¾ VDD (“dark” detected), the light will be switched on. The light’s brightness will increase to the selected brightness within the selected fade time. The RELAY output is activated at the start of the fading-on cycle. The light and the relay will remain on for the duration set by the ON-TIME input. 4.10.4 Conditions for Switching the Light OFF (AUTO mode) The light is switched off softly after the selected ON-TIME has elapsed. The light’s brightness will reduce to zero within the selected fade time. The RELAY output is switched off at the start of the fading-off cycle. ELMOS Semiconductor AG Specification 9 / 15 03SP0343E.01 08.11.2006 E910.99 5 Application Example Figure 5-1: Application Circuit for a DC Sensor Light Component Values Designator Description R1 R2 R3 R4 R5 R6 P1,P2, P3, P4 C1, C4 C2 C3 IRA1 Q1 N1 LDR1 P5 33k 20k 22k 180k 22k 1k to 50k, load dependent 47k 470nF 1nF 10µF LHI 878 NPN NTC 47k Light dependent resistor 2.2M 1) 1) 1) 1) 1) Table 8: Component Values for Application Circuit 1) Suitable component values must be determined by the manufacturer) ELMOS Semiconductor AG Specification 10 / 15 03SP0343E.01 08.11.2006 E910.99 6 Package 6.1 Marking 6.1.1 Top Side ELMOS 91099A XXX#YWW*@ where 91092 ELMOS Project Descriptor A Version # Assembler Code YWW Year and Week of Fabrication * Mask Revision Number @ ELMOS internal Marking 6.1.2 Bottom Side No Marking ELMOS Semiconductor AG Specification 11 / 15 03SP0343E.01 08.11.2006 E910.99 6.2 Package Dimensions 2 1 E Index Area H 3 N D h x 45° Seating Plane A e C phi A1 B L Figure 6.2-1: Package Outlines of SO 20 Description Symbol min mm typ max min inch typ max Distance from the seating plane to the highest point of body Distance between the seating plane and the base plane Width of terminal leads, including lead finish A - - 2.64 - - .104 A1 0.10 - - .004 - - B 0.36 0.51 .014 - .020 Coplanarity lead to lead b2 - - 0.10 - - .004 C 0.23 - 0.33 .009 - .013 D 12.65 - 13.05 .498 - .514 E 7.40 - 7.60 .291 - .299 e - 1.27 - - .050 - H 10.11 - 10.65 .398 - .419 Body chamfer angle h 0.25 - 0.75 .010 - .029 Length of terminal for soldering to substrate L 0.51 - 1.01 .020 - .040 Number of terminal positions N - 20 - - 20 - Angle of lead mounting area a 0° - 8° 0° - 8° Thickness of leads measured in a plane perpendicular to the seating plane including lead finish. The longest body dimension measured perpendicular to the body width E The smallest body width dimension Linear spacing between true lead positions which applies over the entire lead length or at the gauge plane Largest overall package width dimension of mounted package Table 9: Package Dimension ELMOS Semiconductor AG Specification 12 / 15 03SP0343E.01 08.11.2006 E910.99 7 Record of Revisions Chapter Rev. Change and Reason for Change Date Released ELMOS 6.1.1 00 1. Version 23.08.2006 01 Marking (line 2) changed from E910.99A to 91099A 08.11.2006 ELMOS Semiconductor AG Specification 13 / 15 Customer 03SP0343E.01 08.11.2006 E910.99 8 Index Table of Content 1 Pinout................................................................................................................................................................2 1.1 Pin Description.........................................................................................................................................2 1.2 Package Pinout........................................................................................................................................2 2 Operating Conditions........................................................................................................................................3 2.1 Absolute Maximum Ratings.....................................................................................................................3 2.2 Recommended Operating Conditions......................................................................................................3 3 Detailed Electrical Specification.......................................................................................................................4 4 Functional Description......................................................................................................................................5 4.1 Blockdiagram............................................................................................................................................5 4.2 Voltage Regulator.....................................................................................................................................5 4.3 Oscillator..................................................................................................................................................5 4.4 PIR Sensor Input......................................................................................................................................6 4.5 Band-Pass Filter.......................................................................................................................................6 4.6 Parameter Settings...................................................................................................................................6 4.6.1 SENS................................................................................................................................................6 4.6.2 BRIGHT............................................................................................................................................6 4.6.3 FADE................................................................................................................................................6 4.6.4 ON-TIME..........................................................................................................................................6 4.6.5 TCOMP............................................................................................................................................7 4.7 PWM and RELAY output drivers..............................................................................................................7 4.8 VSW input................................................................................................................................................8 4.9 Controller: Modes of Operation................................................................................................................8 4.10 Operation ...............................................................................................................................................8 4.10.1 Power-up Mode..............................................................................................................................8 4.10.2 Trigger condition............................................................................................................................8 4.10.3 Conditions for Switching the Light ON (AUTO mode)....................................................................9 4.10.4 Conditions for Switching the Light OFF (AUTO mode)..................................................................9 5 Application Example.......................................................................................................................................10 6 Package..........................................................................................................................................................11 6.1 Marking...................................................................................................................................................11 6.1.1 Top Side.........................................................................................................................................11 6.1.2 Bottom Side....................................................................................................................................11 6.2 Package Dimensions.............................................................................................................................12 7 Record of Revisions.......................................................................................................................................13 8 Index...............................................................................................................................................................14 ELMOS Semiconductor AG Specification 14 / 15 03SP0343E.01 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