E910.92 PIR Motion Detector Features General Description • Fully integrated PIR motion detector • Digital signal processing • On chip supply regulator with wide operating voltage range • Low power consumption • Temperature compensation input • Differential PIR sensor input • Selectable relay output polarity • Selectable pulse count and timing algorithm for motion detection The E910.92 integrated circuit combines all required functions for a single chip Passive Infra Red (PIR) motion detector. A relay and a LED output are provided for interfacing to an occupancy detect or alarm system. One or two PIR sensors can be connected directly to the PIR inputs. The pull-down resistors and DC decoupling circuitry are integrated on chip. Internally, the PIR sensor signal is converted to a 15 bit digital value. The parameters for sensitivity, pulse count and timing are set by means of connecting the corresponding inputs to VDD, VSS or leaving them open. Applications • PIR motion detection • Intruder detection The voltage level on the temperature compensation input is converted to a digital value with 4 bit resolution. • Occupancy detection All signal processing is performed digitally. • Motion sensor lights Single Sensor Application Circuit VSS C1 U1 14 VSSA VB D1 10 Supply C2 11 12 IRA1 VDDA PIRIN RELAY 13 Alarm L1 LED R2 20 RE1 19 Alarm VDD NPIRIN VDD 2 Threshold/Sensitivity PT0 5 PT1 4 PT0 SENS 17 DP1 16 S2 Far RPOL Pulse Count DP0 Near 3 PT1 DP0 TEST DP1 VSS 8 9 C3 18 0V VSS Time Window DT0 7 DT1 6 DT0 DT1 E910.92 ELMOS Semiconductor AG TCOMP 15 R3 N1 NTC R4 R5 VDD Specification 1 / 13 03SP0359E.01 08.01.2007 . E910.92 1 Pinout 1.1 Pin Description Name Pin No. Description NC 1 Not Connected VDD 2 Regulated supply voltage SENS 3 Range select PT1 4 Sensitivity selection PT0 5 Sensitivity selection DT1 6 TRUE-ROLLTM time window select DT0 7 TRUE-ROLLTM time window select RPOL 8 RELAY Pin polarity selection TEST 9 Reserved, connect to VSS VB 10 Unregulated supply voltage VDDA 11 Regulated supply voltage, only connect PIR element to this pin PIRIN 12 PIR sensor input NPIRIN 13 Negative PIR sensor input VSSA 14 Negative supply voltage, only connect PIR element to this pin TCOMP 15 Temperature Compensation Input DP1 16 Pulse count selector DP0 17 Pulse count selector VSS 18 Negative supply voltage RELAY 19 Relay Output (open drain) LED 20 LED Output (open drain) Table1: Device Pin Out 1.2 Package Pinout NC 1 VDD 2 E910.92 20 LED 19 RELAY 18 VSS SENS 3 PT1 4 17 DP0 PT0 5 16 DP1 DT1 6 15 TCOMP DT0 7 14 VSSA RPOL 8 13 NPIRIN TEST 9 12 PIRIN VB 10 11 VDDA Figure 1.2-1: Pinout ELMOS Semiconductor AG Specification 2 / 13 03SP0359E.01 08.01.2007 E910.92 2 Operating Conditions 2.1 Absolute Maximum Ratings Parameter Symbol Min. Max. Unit Voltage on pin VB (Supply voltage) VB -0.3 60 V Voltage on pins RELAY, LED VR -0.3 VB V IIN -100 100 mA 150 °C 150 °C 2,0 kV Current into any pin Condition One pin at a time Junction Temperature TJ Storage Temperature TSTG ESD 1) - 55 VESD Table 2: Electrical Characteristics 1) The ESD Protection circuitry is proved according to AEC Q100 (Human Body Model) with the following conditions : REXT = 1500Ω CEXT = 100pF (Stresses beyond those listed above may cause permanent damage to the device. Exposure to absolute maximum ratings may affect the device reliability. 2.2 Recommended Operating Conditions The specified parameters are guaranteed within the range of operating conditions unless otherwise noted. Parameter Condition Symbol Min. Typ Max. Unit -40 85 °C 4.8 48 V Temperature Operating temperature range Regulator Supply voltage VB Table3: Operating Conditions ELMOS Semiconductor AG Specification 3 / 13 03SP0359E.01 08.01.2007 E910.92 3 Detailed Electrical Specification Parameter Condition Symbol Min. Typ Max. Unit 200 µA 4.4 V 20 %VDD Regulator VB=12V Outputs unloaded Supply current Regulator output voltage IB VDD 3.6 4 Digital Inputs, Schmitt-Triggers (DP0/1, PT0/1, DT0/1, SENS, TEST, RPOL) Input low voltage VIL Input high voltage VIH Pull down current on TEST 80 %VDD Input to VDD 160 µA Digital Outputs RELAY sink capability (open drain) VOL<1V IOL 22 mA LED VOL<1V IOL 22 mA sink capability (open drain) TCOMP Input Input voltage range 0 VDD Input leakage current -1 1 VDD/8 VDD/4 Input ADC range > VDD /4 saturates Input ADC resolution µA 4 Bits 80 KΩ PIRIN / NPIRIN Inputs PIRIN /NPIRIN input resistance to VSS PIRIN input DC voltage range 0 PIRIN input AC voltage Peak-to-peak ADC Resolution 1 count VDD V 100 mV 14 µV LPF cut-off frequency *) 7 Hz HPF cut-off frequency 0.44 Hz KHz Oscillator and Filter *) Oscillator frequency FCLK 64 System Clock frequency FC_G FCLK/2 Table 4: Detailed Electrical Specification *) Guaranteed by Design, not tested within production. All voltages are referred to GND, and currents are positive when flowing into the node unless otherwise specified. ELMOS Semiconductor AG Specification 4 / 13 03SP0359E.01 08.01.2007 E910.92 4 Functional Description The IC 910.92 is a fully integrated PIR motion detector, that allows to build an application with a minimum of external components. One or two PIR sensors can be connected directly to the IC. Due to the digital signal processing, a high insensitivity against external disturbances is achieved. All typical adjustable parameters, used at motion detection can be set reasonable by connecting the corresponding inputs to VDD or VSS. The also integrated temperature compensation and the possibility to drive directly an LED or a relay completes the functionality. Those features and the minimum demand on external components makes the E910.92 most suitable for high-end applications as well as for high-volume low-end applications. 4.1 Blockdiagram V SSA V DD V SS TC O MP RPO L LED PIRIN Input A mplifier A /D C onv erter NPIRIN Temperature O utput C ompensation Driv er RELA Y Band Pass F ilter V SSA SENS PT0 VB Threshold Detector V oltage Regulator PT1 A larm Ev ent Processor DP0 O scillator DP1 V DDA V SSA TEST DT0 DT1 Figure 4.1-1: Block Diagram 4.2 Voltage Regulator An on-chip voltage regulator generates a stable 4V supply for the internal circuitry. The unregulated input voltage on VB can range from 5V to 48V. The VDD and VB pin require a bypass capacitor to VSS. 4.3 Oscillator The IC contains an on chip low power oscillator. The frequency is set to 64kHz typical. The timing signals and cut-off frequencies of the digital filters are derived from this frequency. ELMOS Semiconductor AG Specification 5 / 13 03SP0359E.01 08.01.2007 E910.92 4.4 PIR Sensor Input A differential input stage allows up to 2 PIR sensors to be connected. The PIRIN and NPIRIN inputs have an internal pull-down resistor. The analog to digital converter generates a digital signal from the voltage level measured between the PIRIN and NPIRIN pins. 4.5 Band-Pass Filter A 2nd order low-pass filter with a cut-off frequency of 7Hz eliminates unwanted higher frequency components. This signal is then passed to a 2nd order high pass filter with a 0.44Hz cut-off frequency. 4.6 Alarm Event Processor When the PIR signal level (PIRIN-NPIRIN) exceeds the selected sensitivity threshold, an internal pulse is generated and the open drain LED output transistor is switched on. The LED output remains activated while the signal is above the selected sensitivity threshold. If immediate alarm mode (alarm on 1 pulse count) is selected, then the RELAY output is activated on every pulse, for the duration, selected by DT0 and DT1. If TRUE-ROLLTM alarm mode (alarm on more than 1 pulse) is selected, a minimum number of pulses, selected with DT1 and DT0, would have to appear within the selected TRUE-ROLLTM time window (alarm condition) to activate the RELAY output. The RELAY output stays active for the selected TRUE-ROLLTM time window. Once the RELAY output is activated, any further alarm condition detected within the selected TRUEROLLTM time window will restart the window timer. To avoid continues alarm, further pulses are only taken as valid and counted when the signal has changed the sign at least once before. RELAY: The polarity of the relay output (i.e. active high or active low), can be selected with the RPOL pin. RPOL 0 1 Relay Output Active low Active high Table 5: Relay output polarity The pins to select the sensitivity threshold, the TRUE-ROLLTM time window and the PULSE count should typically hard wired by the PIR motion detector manufacturer. The SENS input can be connected to a jumper, which offers a sensitivity adjustment on site. The conditions required to raise an alarm, are controlled by the following digital inputs. These inputs must be connected to VDD (‘1’), VSS (‘0’) or left open (Z), as indicated in table 6. ELMOS Semiconductor AG Specification 6 / 13 03SP0359E.01 08.01.2007 E910.92 Pin Name Description Selects the PIR controller’s sensitivity threshold PT1 PT0 0 0 x1 14µV 0 Z x2 28µV 0 1 x4 56µV Z 0 x8 112µV Z Z x 16 224µV Z 1 x 32 448µV 1 0 x 64 896µV 1 Z/1 x 128 1.792mV DP1 0 0 1 1 DP0 0 1 0 1 Selects the amount of pulses required for an alarm condition. 1 immediate alarm mode 2 TRUE-ROLLTM 3 alarm 4 mode DT1 0 0 1 1 DT0 0 1 0 1 Selects the TRUE-ROLLTM time window 2s 4s 8s 16 s SENS Sensitivity / units Sensitivity Threshold (SENS = 0) Most sensitive Least sensitive Connection to VDD doubles selected threshold Table 6: Alarm event processor input settings TCOMP: Temperature compensation input pin. A temperature dependent resistor network may be connected to this pin to generate voltages between VDD/8 and VDD/4. The voltage on this pin must decrease as the temperature increases. At 37°C, the voltage should be between VDD*19/128 and VDD*20/128. Internally, a TCOMP factor is selected, based on this pin voltage. This factor is multiplied with the sensitivity threshold. Table 7 shows the dependency of the pin voltage and the TCOMP factor used by the alarm event processor. Pin voltage/ VDD TCOMP factor Pin voltage/ VDD TCOMP Factor <16/128 17/128 18/128 19/128 20/128 21/128 22/128 23/128 7/8 6/8 5/8 4/8 4/8 5/8 6/8 7/8 24/128 25/128 26/128 27/128 28/128 29/128 30/128 >31/128 8/8 9/8 10/8 11/8 12/8 13/8 14/8 15/8 Table 7: Temperature compensation factor ELMOS Semiconductor AG Specification 7 / 13 03SP0359E.01 08.01.2007 E910.92 Example of TRUE-ROLLTM time window set to 4s and pulse count to 3. + Threshold PIRIN-NPIRIN 0 - Threshold 1) LED TRUE-ROLLTM (Time window) 4s 2) 4s 4s 4s 4s 3) 4s 3) 4s 5) 4s 5') 6) 4s 6) 4) RELAY 1) Pulse not counted as valid since the PIR signal level has not changed its sign before 2) Pulse counted as valid since the PIR voltage has changed its sign between the last pulses 3) Third pulse within the TRUE-ROLLTM time window activates relay output 4) Relay output stays active for the set time window 5) Each new detected alarm condition (three pulses within the TRUE-ROLLTM time window) restarts the window timer and prolongs the relay activation (see 5') ) 6) Only two pulses within the TRUE-ROLLTM time window counted; no new alarm condition; the timer is not re-triggered. ELMOS Semiconductor AG Specification 8 / 13 03SP0359E.01 08.01.2007 E910.92 5 Application example VSS C1 U1 14 VSSA VB D1 10 Supply C2 11 12 IRA1 VDDA PIRIN LED RELAY 13 PT1 P ulse C ount DP0 DP1 Ti me Window DT0 DT1 4 NPIRIN PT0 SENS 16 RE1 19 Alarm 2 Near 3 DP0 TEST DP1 VSS S2 Far PT1 RPOL 17 R2 VDD VDD T hre shold/Sensitivity PT0 5 Alarm L1 20 8 9 C3 18 0V VSS 7 6 DT0 DT1 TCOMP 15 R3 E910.92 N1 NTC R4 R5 VDD Figure 5-1: Single Sensor Application Circuit 5.1 Compenent Values Designator R2 R3 R4 R5 N1 C1 C2, C3 D1 IRA Description 1.2kΩ 180kΩ 33kΩ 18kΩ 47kΩ NTC 10µF/25V, electrolytic 820nF, ceramic 1N4007, optional protection diode LHI 878, PIR sensor Table 8: Component Values for Application Circuit ELMOS Semiconductor AG Specification 9 / 13 03SP0359E.01 08.01.2007 E910.92 6 Package 6.1 Marking 6.1.1 Top Side ELMOS 91092A XXX#YWW*@ where 91092 ELMOS Project Descriptor A Version # Assembler Code YWW Year and Week of Assembly * Mask Revision Number @ ELMOS internal Marking 6.1.2 Bottom Side No Marking 6.2 Package Dimensions The IC E910.92 is assembled in a 20SOIC package. The package dimensions are according to JEDEC standard. The valid package specification can be downloaded under http://www.elmos.de/fe/packages/IMDS/index.html ELMOS Semiconductor AG Specification 10 / 13 03SP0359E.01 08.01.2007 E910.92 7 Record of Revisions Chapter Rev. Change and Reason for Change Date Released ELMOS all 00 1. Version 22.06.2006 6.1.1 01 Marking (2nd line) changed from E910.92A to 91092A 08.11.2006 6.2.2 01 Package Dimensions: Table exchanged against internet link 08.01.2007 ELMOS Semiconductor AG Specification 11 / 13 Customer 03SP0359E.01 08.01.2007 E910.92 8 Index Table of Content 1 Pinout................................................................................................................................................................2 1.1 Pin Description.........................................................................................................................................2 1.2 Package Pinout........................................................................................................................................2 2 Operating Conditions........................................................................................................................................3 2.1 Absolute Maximum Ratings.....................................................................................................................3 2.2 Recommended Operating Conditions......................................................................................................3 3 Detailed Electrical Specification.......................................................................................................................4 4 Functional Description......................................................................................................................................5 4.1 Blockdiagram............................................................................................................................................5 4.2 Voltage Regulator.....................................................................................................................................5 4.3 Oscillator..................................................................................................................................................5 4.4 PIR Sensor Input......................................................................................................................................6 4.5 Band-Pass Filter.......................................................................................................................................6 4.6 Alarm Event Processor............................................................................................................................6 5 Application example.........................................................................................................................................9 5.1 Compenent Values...................................................................................................................................9 6 Package..........................................................................................................................................................10 6.1 Marking...................................................................................................................................................10 6.1.1 Top Side.........................................................................................................................................10 6.1.2 Bottom Side....................................................................................................................................10 6.2 Package Dimensions.............................................................................................................................11 7 Record of Revisions.......................................................................................................................................12 8 Index...............................................................................................................................................................13 ELMOS Semiconductor AG Specification 12 / 13 03SP0359E.01 08.01.2007 E910.92 WARNING – Life Support Applications Policy ELMOS Semiconductor AG is continually working to improve the quality and reliability of its products. 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