����������� E910.94 RIPPLE DETECTOR FOR RPM CONTROL Features General Description ÿ ÿ ÿ ÿ The IC is designed to control the speed of DC-motors. In order to determine the motor speed the commutation-related ripple of the motor current is evaluated and converted to a 5V digital signal for the µC. The filtered motor current is also buffered and provided to the µC’s ADC. Many types of motors can be adapted with appropriate filter design. The nominal motor voltage, provided by the µC is converted into a 20kHz PWM signal used to drive the power MOS half bridge. Duty cycle of 100% is possible due to an implemented charge pump. Operating voltage range VDD 7V to 16V Low standby current typ. 40µA Evaluation of commutation ripple signal Internal charge pump for 100% PWM duty cycle actuation ÿ Over voltage/temperature shutdown ÿ – 40°C to +125°C operating temperature ÿ SO 24w package Applications ÿ Fuel and hydraulic pump control ÿ Fan regulator ÿ Speed regulator VBAT VCC VS VDD VREG VDD HS 7V HSHOT CRASH Ctrl. STATUS Slewrate controlled KL15 BS FET WDOG VDD Driver LSHOT PWM Gen 5k / 20kHz PWMLP VMOT R3 R4 PROG1 PROG2 Filter RIPOUT & BPO VCO RT ELMOS Semiconductor AG alternatively applicable ! LS PWM µC M CT + SHUNT _ INNC RSHUNT VCLR OUTC R1 Specification 1/29 R2 QM-No.: 03SP0394E.00 E910.94 1 Pinout 1.1 Pin Description Name Pin-No. Type 1) Description CRASH 1 DI Digital input crash signal BPO 2 AO Bandpass Output VCRL 3 AO VCO control voltage OUTC 4 AO Current amplifier output INNC 5 AI Current amplifier, inverting input SHUNT 6 AI Current amplifier, non-inverting input VDD 7 AO 5V voltage contol output GND 8 S Ground KL15 9 AI Signal input Kl. 15 (clamp 15) LS 10 AO Gate output for low side driver VMOT 11 AI Input motor voltage LSHOT 12 AI Over temperature control of low side driver HSHOT 13 AI Over temperature control of high side driver BS 14 AIO I/O for bootstrap voltage HS 15 AO Gate output for high side driver VS 16 S Positive supply voltage, battery voltage PROG1 17 DI Programming of filter gain PROG2 18 DI Programming of filter gain RIPOUT 19 DO Digital output ripple signal PWM 20 DI PWM input motor target value PWMLP 21 AIO Pin for PWM lowpass capacitor CT 22 AIO Timing capacitor for VCO RT 23 AIO Timing resistance for VCO STATUS 24 DO Digital output for status signal 1) D = Digital, A = Analog, S = Supply, I = Input, O = Output, HV = High Voltage (max. 40V) ELMOS Semiconductor AG Specification 2/29 QM-No.: 03SP0394E.00 E910.94 1.2 Package Pinout � ����� 1 24 ������ ��� 2 23 �� ���� 3 22 �� ���� 4 21 ����� ���� 5 20 ��� ����� 6 19 ������ ��� 7 18 ����� ��� 8 17 ����� ���� 9 16 �� �� 10 15 �� ���� 11 14 �� ����� 12 13 ����� Figure 1: Pinout 2 Operating Conditions 2.1 Absolute Maximum Ratings Operation of the device at those limits or at values exceeding the limits is not permitted. Parameter Supply voltage Condition Symbol Min. Max. Unit t < 0.5 s t < 0.5 ms VS -0.3 25 40 50 V V V IS 50 mA P0 750 mW Current consumption Power dissipation TA= +85ºC Input voltage Pins: 1, 5 ,6, 11, 12, 13, 17, 18, 20 Vin -0.3 VDD + 0.3 V Iin -10 10 mA Iout -10 10 mA Iclmp 5 mA Iclmp 25 mA RTRJ-A 85 K/W Barrier junction temperature TJ +150 ºC Operation temperature range TOPT -40 +125 ºC Storage temperature range TSTG -40 +150 ºC Input current Pins: 1, 5, 6, 11, 17, 18, 20 Output current Pins: 2, 3, 4, 19, 21, 22, 23 Clamp current Pins: 9, 10, 14, 15 Clamp current Pins: 9, 10, 14, 15 Thermal resistance (junction to ambient) ELMOS Semiconductor AG t < 0.5 s Specification 3 /29 QM-No.: 03SP0394E.00 E910.94 3 Detailed Electrical Specification 3.1 Parameter Parameter Symbol Condition Min. Typ. Max. Unit Operating voltage range VS *) 7 12 16 V Operating temperature range TOPT +125 ºC -40 *) In the operating voltage range from 5V to 7V and from 16V to 25V the circuit functionality is guaranteed but only with restricted parameters. Below 5V and above 25V the output stage is shut down defined. 3.2 DC Parameters 3.2.1 Supply Pins: 7,8,16 No. Parameter Symbol Condition KL15 = 0, Stand By Min. 1 Current consumption IDDStBy 2 Current consumption IDD 3 Under voltage shutdown VUV 4.40 25 4.75 4 Over voltage shutdown VOV 5 Controller voltage VDD ELMOS Semiconductor AG Operating, PWM = 0 Without Load Specification 4/29 Typ. Max. Unit 40 60 µA 0.5 mA 5.30 V 30 35 V 5.00 5.25 V QM-No.: 03SP0394E.00 E910.94 3.2.2 Drivers Pins: 10,14,15 No. Parameter Symbol Condition Min. VS < VBS,lim lout = 0 Motor-PWM = 0 VS- 0.8 1 Bootstrap voltage VBS 2 Bootstrap voltage VBS,lim 3 Bootstrap voltage VBS 4 Source impedance charge pump Pin BS Rq,cp 5 Output voltage Vout, I 6 Pin HS Vout, h 7 Output voltage Vout, I 8 Pin LS Vout, h 9 Output current Pin HS 10 11 Iout, l Iout, h Output current Pin LS 12 Iout, l Iout, h VS > 16V lout = 0 Motor-PWM = 0 VS = 12V lout = 20mA Typ. 16 VS - 4 100 kÝ 100 mV mV 100 mV VBS - 100 mV 80 mA Motor-PWM on Vout = VBS -4V Motor-PWM on Vout = 4V 200 VBS - 100 Motor-PWM on lout = 0 Motor-PWM off Vout = 4V V V Motor-PWM off lout = 0 Motor-PWM off lout = 0 Unit V 10 VS = 2V Motor-PWM=100% Motor-PWM on lout = 0 Max. -80 80 mA mA Motor-PWM off Vout = VBS -4V -80 mA Max. Unit 0 1.25 V 2 VDD V VDD V 3.2.3 Over Temperature Shutdown Pins: 12,13 No. Parameter 1 Input voltage Pins HSHOT, LSHOT 2 3 Output voltage Pins HSLOT, LSLOT 4 Holding current 5 Pins HSHOT, LSHOT ELMOS Semiconductor AG Symbol Condition VRUN VOT (VOT = Driver off) VSLP Standby mode active IOTHOLD not in standby mode IOTOFF in standby mode Specification 5 /29 Min. Typ. 500 µA -50 µA QM-No.: 03SP0394E.00 E910.94 3.2.4 Current Sense Amplifier Pins: 4,5,6 No. Parameter Symbol Condition Min. 200mV < OUTC < 4.8V 1 Offset voltage Voff 2 Common mode input CMR 3 Input current Pins SHUNT, INNC 4 Open circuit gain 5 Output voltage Pin OUTC I shunt, innc G openloop Vout, I Typ. Max. Unit -10 10 mV 0 3 V 0V < Vin < VDD -1 1 µA 1) 60 dB SHUNT = 0V INNC = 100mA Iout = 250µA 0.5 V SHUNT = 100mV INNC = 0V Iout = -250µA VDD - 0.5 Symbol Condition Min. Typ. Max. Unit Vout OUTC = 0 VMOT = 100mV 170 200 230 mV 4.25 4.50 4.75 V OUTC = 4V VMOT = 2.25V 450 500 550 mV Symbol Condition Min. Typ. Max. Unit Vout RT = 100kΩ VCRL < 200mV 250 300 350 mV VCRL = 4.5V 2.40 2.70 3.00 V 6 V 1) Guaranteed by design, not tested in production. 3.2.5 VCO Control Voltage (Pin: 3, VCRL for measuring purposes only) No. Parameter 1 Output voltage PIN VCRL OUTC = 0 VMOT = 2.25V 2 3 3.2.6 SC*-Lowpass Filter Pin: 23 No. Parameter 1 Output voltage Pin RT 2 * switched capacitor ELMOS Semiconductor AG Specification 6/29 QM-No.: 03SP0394E.00 E910.94 3.2.7 Motor PWM Generation Pin: 21 No. Parameter 1 2 3 Source impedance Pin PWMLP Motor- on threshold Pin PWMLP Motor-0ff threshold Pin PWMLP Symbol Condition Min. Typ. Max. Unit Rq 85 125 160 kΩ Vm, on 550 600 650 mV Vm, off 350 400 450 mV Min. Typ. Max. Unit 3.2.8 Digital Inputs Pins: 1,17,18,20 No. Parameter 1 2 3 4 5 Symbol Condition Input voltage Pins: Vin, I 0 1 V CRASH, PROG1, PROG2, PWM Vin, h 4 VDD V Vin, I 0 4 V Vin, h 5 18 V -1 1 µA Input voltage Pin KL 15 Input current for Pins: CRASH, PWM, PROG1, PROG2 Input impedance Pin KL 15 Clamp voltage Pin KL 15 lin 0V < Vin < VDD Rin 150 300 400 kΩ Vclmp lin = 1mA 20 25 35 V Symbol Condition Min. Typ. Max. Unit Vout, I Iout = 1mA 1 V IIeak Output inactive 1 µA 3.2.9 Digital Outputs Pins: 19,24 No. Parameter 1 Output voltage Pin RIPOUT, STATUS 2 Leakage current ELMOS Semiconductor AG Specification 7/29 -1 QM-No.: 03SP0394E.00 E910.94 3.3 AC Parameters 3.3.1 Drivers Pins: 10,15 No. Parameter 1 2 3 Slew rate Pin HS Slew rate Pin LS PWM-Frequency Symbol Condition Min. SRR CL = 10 nF Vout = 25...75% SRL Max. Unit 7 13 V/µs Vout = 25...75% -4 -9 V/µs SRR CL = 10 nF Vout = 25...75% 7 13 V/µs SRL Vout = 25...75% -4 -9 V/µs TPWML uPwm < 5.25 kHz longer than 10 ms 3 5 7 kHz uPwm > 9.5 kHz longer than 10 ms 13 20 25 kHz Condition Min. Typ. Max. Unit TPWMH Typ. 3.3.2 SC (switched capacitor) Filter Pins: 2,3,4,17,18,19 No. Parameter 1 Cut-off frequency lowpass 2nd order Symbol TLP fVCO/400 Hz fVCO/200 Hz 3 - 6 - 9 - 12 - 0.8 1/V 2 Center frequency bandpass 4th order TBP 3 Resonance gain A res 4 Bandpass 4th order PROG1 = 0 PROG2 = 0 PROG1 = 1 PROG2 = 1 5 PROG1 = 0 PROG2 = 1 6 7 PROG1 = 1 PROG2 = 0 VCO frequency Proportionality factor ELMOS Semiconductor AG k 30 kΩ < RT < 200 kΩ 200 pF < CT < 470 pF k = fVCO · (CT+20pF) · RT/URT Specification 8/29 QM-No.: 03SP0394E.00 E910.94 3.3.3 uPWM Input Pin: 20 No. Parameter 1 Watch dog response time 2 uPWM frequency Symbol Condition Min. Typ. Max. Unit TWD Before last rising edge at uPWM 8 10 16 ms 20 kHz Max. Unit 20 kHz FuPWM 0.125 3.3.4 CRASH Input Pin: 1 No. Parameter 1 CRASH frequency Symbol Condition FCRASH Min. Typ. 1 3.3.5 STATUS Output Pin: 24 No. Parameter 1 Error frequency Symbol Condition FERROR Min. Typ. Max. Unit 400 750 1000 Hz Min. Typ. Max. Unit 10 20 ms 3.3.6 Undervoltage Shutdown Pins: 10,15,16 No. Parameter 1 Response time ELMOS Semiconductor AG Symbol Condition TUT Specification 9/29 QM-No.: 03SP0394E.00 E910.94 4 Functional Description 4.1 Block Diagram VDD VS PWM + 5V supply KL15 Analog Supply charge on BS pump + 7V 15V high HS side control watch dog 0.5V PWMLP LS side PWM + 5V low PWM 20 kHz generation f control OSC LSHOT STATUS logic CRASH HSHOT VCRL VMOT second order + - 0.3V SC min. CT VCO RT low pass filter BPO Clk R R SHUNT INNC + - fourth order min.- SC max.- band pass filter detection gain OUTC RIPOUT threshold PROG1 PROG2 AGND DGND Figure 2: Block diagram ELMOS Semiconductor AG Specification 10/29 QM-No.: 03SP0394E.00 E910.94 4.2 Detailed Functional Description 4.2.1 Supply Voltage The IC is connected to battery line via pin VS and generates two supply voltages. The 5V supply VDD is used for supplying the logic as well as all internal analog references. An external bypass capacitor has to be provided at pin VDD for stabilization. An additional 7V supply feeds the internal operating amplifiers and comparators. This voltage is not externally accessible. If the VDD voltage drops to a value of typ. 4.5V a low-voltage reset is activated. The logic is set to a default state in which both output stages are at 0V. 4.2.2 States of Operation Three operating conditions can be achieved by independently activating the IC through KL15 or microprocessor PWM: 1.Standby mode. 2.Normal Run mode: Operation with KL15 and µP PWM. 3.Motor sport mode: Operation only with µP PWM. 4.2.2.1 Standby Mode The IC is designed for operation with KL30 (constant battery supply) and therefore is equipped with a standby mode for low power consumption (typ. 40µA). In standby mode all analog components except for the power supply are put into a power saving state. The standby mode is activated when the watchdog detects no rising edges at the pin PWM for typ. 10ms after turn off of the ignition, i. e. after the signal at the pin KL15 turns to 0. ELMOS Semiconductor AG Specification 11 /29 QM-No.: 03SP0394E.00 E910.94 4.2.2.2 Run Mode In the regular Run mode the input value at pin PWMLP is transformed into a PWM signal for the motor half bridge independent of supply voltage variations. The motor PWM frequency during the run mode can be controlled by the microprocessor signal as follows: Microprocessor PWM Motor PWM fµP < 5.25 kHz 5 kHz fµP < 9.50 kHz 20 kHz With the two different Motor PWM frequencies the power dissipation in the drivers caused by the rising and falling edges of the PWM can be reduced. During operation the pin PWM is monitored for frequently occurring edge transitions. If there are no rising edges detected for an interval of typ. 10ms, an internal multiplexer sets the target value to 5V, and the motor PWM frequency to 5kHz the motor runs at its maximum voltage. As soon as two rising edges are detected during an interval of < 10ms normal operation resumes. If an overtemperature condition is detected during regular run mode both drivers are shut down. 4.2.2.3 Motor Sport Mode Running the IC without KL15 can be used to by-pass the emergency operation at maximum voltage without the microprocessor signal. In this case the IC switches into standby mode if the microprocessor signal fails. All other functions are preserved. ELMOS Semiconductor AG Specification 12/29 QM-No.: 03SP0394E.00 E910.94 4.2.2.4 Crash Shutdown If a frequency of more than 1kHz is detected at the CRASH input and a µPWM frequency equivalent to zero-flow request (PWMLP ≤ 0.6V) is applied at the same time, the IC is set into the CRASH mode. In CRASH mode the drivers are shut down and the STATUS signal turns to 0V. The CRASH can only be left when a µP PWM frequency is detected and the CRASH signal is set to 0V statically. see Run Table PWMLP < 0.6V and CRASH = f CRASH and Run KL15 = On and µPWM = active µPWM = active and KL15 = On KL15 = Off and no µPWM CRASH = 0 V and µPWM = active KL15 = On Standby Crash KL15 = Off CRASH = 0 V and µPWM = active no µPWM STATUS = 5V HS, LS = 0V SLEEPMODE KL15 = Off and µPWM = active PWMLP < 0.6V and CRASH = f CRASH and Motor Spor t STATUS = 0V HS, LS = 0V µPWM = active and KL15 = Off see Run Table Figure 3: State Diagram for Operation Modes Run Table: Inputs Outputs Modus CRASH µP PWM KL 15 PWMLP OT STATUS Bridge 0V running X X 0V 5V PWM X off 5V 5V 0V fERROR 100% 5V X running X ELMOS Semiconductor AG X X X X 0V fERROR > 3V fERROR Specification 13 /29 PWM off regular operation CRASH failure 100% actuation over temperature QM-No.: 03SP0394E.00 E910.94 4.2.3 PWM Generation The motor half bridge is driven by a pulse-width modulated signal. The internal oscillator is realized as follows: a capacitor is charged up by a voltage-current converter to a threshold of 5V (VDD). A comparator activates a switch which discharges the capacitor. The reference for the U/I converter amounts to 2.5V (VDD/2). The 20kHz - 5kHz switching is realized by internally switching of the capacitor size. A second, absolutely identical circuit part is used for the PWM generation. In that circuit the U/I converter receives the current motor voltage, which is integrated in the capacitor. When the target value ‘PWMLP’ is reached the pulse is stopped by the comparator. 2.5V V I + - S Q R QB 5V VMOT 20 kHz fosc 300 ns Delay V I + - S Q R QB PWM PWMLP Figure 4: Block diagram PWM generation By integration of the current motor voltage, the average target value is adjusted within each period independent of the voltage supply process. The lack of a closed-loop control circuit within the PWM generation avoids stability problems of the RPM control which could occur due to an additional pole in the transfer function. For failure free function of the voltage integration, the filter time constant at the input ‘VMOT’ must remain negligible. In practice a value of ca. 1µs is acceptable. C 1= ELMOS Semiconductor AG 1µs R3 Specification 14 /29 QM-No.: 03SP0394E.00 E910.94 The maximum value of the motor voltage (corresponding to 5V target value) is reached when at 100% PWM the voltage at VMOT just equals the reference voltage at the U/I converter of the oscillator, at 2.5V. Therefore the voltage divider from the motor to the input VMOT has to be dimensioned as follows: R3 V max = V 1 R4 2.5 Vmax = maximum target value of the motor voltage. R3 and R4 voltage divider from motor input to input VMOT (see 4.3 application circuit). If the voltage at PWMLP falls below 0.5V it will be interpreted as a target value of 0. That means, that the output stage is turned off as long as the watch dog detects the required edge changes at pin PWM. 4.2.4 Half Bridge Control The power MOSFETs for the motor half bridge is controlled via two identical drivers with a limit of the output voltage slew rate. Both drivers are supplied by the voltage at pin BS, the connection for the external bootstrap capacitor. The half bridge is driven without overlap. The release for the rising edge of a transistor gate voltage requires that the gate voltage of the respectively other transistor has come below the threshold of ca. 1.5V. This ensures the shortest possible conductive interval in the reverse diodes of the MOSFETs, without undesired through currents during switching edges. During the low phase of the half bridge control the external bootstrap capacitor is charged to a voltage which approximately equals the supply voltage VS but is limited to a maximum of ca. 15V. The low-side driver gate is supplied by this capacitor voltage. By actuating the high-side driver the rising motor voltage ‘pumps’ the voltage at BS to a higher level than the current operating voltage so that the gate source voltage of the high-side driver equals that of the activated low-side driver minus the charging losses caused by the gate capacity. An integrated charge pump compensates the current required by the internal driver stage so that a 100% operation of the half bridge is possible. In order to avoid the gradual discharging of the bootstrap capacitor at PWM duty-cycle values just under 100%, a falling edge of the high-side gate voltage, once begun must be completely finished before the next rising edge can start. This ensures an automatically optimized change between 100% duty cycle and lower values. 4.2.5 Overvoltage Shutdown In order to protect the drivers from too high (bootstrap) voltage both output stage transistors are shut down when the supply voltage VS exceeds a value of typ. 31V. The motor continues to run free during the time of the over voltage. The free running motor generates a voltage at the half bridge at the half bridge center depending on its RPM so that the over voltage at the high-side driver is reduced by the generator voltage. Below 29V at VS the IC returns to the regular operation mode. ELMOS Semiconductor AG Specification 15/29 QM-No.: 03SP0394E.00 E910.94 4.2.6 Overtemperature Shutdown (optional) The inputs LSHOT and HSHOT, in connection with the overtemperature thyristors of the TEMPFET, are used to shut down the drivers in case of overtemperature. When the IC is active both OT inputs supply a pull-down current of min. 500µA. The anode of the TEMPFET should be connected to the IC VDD supply while the cathode is connected to the IC inputs. During regular operation the voltage of the OT inputs is approximately 0V. When the thyristor is ignited by overtemperature and therefore turns to low-impedance, the voltage at the OT inputs rises to approx. 3V. In the digital part the overtemperature state is detected through TTL level Schmitt trigger and the motor drivers are deactivated. The overtemperature state is held until the holding current decreases below the threshold, only then do the thyristors return to the initial state. CAUTION: In standby mode the OT-Holding current is shut off and the inputs at the OT pins are pulled up to the chip-internal VDD. This should not be interpreted as an OT shutdown by the external circuit! 4.2.7 Motor Current Sense Amplifier For processing of the motor current signal, which is available as voltage drop at a shunt resistance, an operating amplifier is integrated; the input common-mode range includes the ground potential. The amplification is adjusted through external resistors R1 and R2 (see 4.3) and has to be selected such that at the maximum motor voltage target value the short circuit current of the motor (incl. shunt) leads to an amplifier output voltage of 5V. With the maximum motor voltage target value Vmax, the ‘dynamic armature resistance’ ra, and the shunt resistance RShunt, the amplification can be calculated by: A1=5 V 1 V max ra RShunt = R1 1 R2 The ‘dynamic armature resistance’ includes the commutation losses and can differ from the measured DC value according to the motor type. It is defined by measuring motor current and motor RPM. For example using the frequency of the commutation ripple at constant motor voltage and at two application-relevant load conditions along with subsequent extrapolation of the resulting curve to a standstill. ELMOS Semiconductor AG Specification 16/29 QM-No.: 03SP0394E.00 E910.94 4.2.8 Ripple Detection The frequency of the commutation ripple of a DC motor is proportional to the RPM, which can be estimated in simple approximation as n VM I M ra (VM : motor voltage, IM : motor current, ra : ‘dynamic amature resistance‘). whereas two more or less constant proportional factors K1 and K2 can be estimated so that n n=K1 V M idle speed K2 I M nO IBLOCK IMOT The IC realizes this formula by calculating to weighted difference between the motor voltage and motor current as they appear at the pins VMOT and OUTC. The result of this calculation is the control voltage that appears at VCRL and is directly proportional to the motor RPM. V CRL V M , I M =2 AV V M A1 RShunt I M This voltage is filtered in a ‘switched capacitor’ (SC-) lowpass second order filter and used for a voltage-controlled oscillator (VCO). The oscillator frequency is therefore also proportional to the approximate motor RPM. The VCO frequency constant is adjusted with the external components RT and CT and thereby adapted to the respective motor type. f VCO V M , I M = V CRL V M , I M RT A LP CT C par 3 5 C2 V REF The VCO frequency clocks a fourth order SC bandpass filter with a resonance frequency at 1/200 of the pulse frequency. Since the VCO frequency is a measure of the motor RPM as well as for the commutation ripple frequency, the resonance frequency of the filter can now be adjusted to the ripple frequency by selecting the appropriate RT and CT. The motor current signal applied to the band pass is filtered of interfering signal parts and can be evaluated in the subsequent circuit part for detection of relative minima and maxima. In addition to a very low-frequency fundamental there are further interfering signals on the motor current, especially harmonics of the ripple signal to be isolated. In order to insure the suppression of those unwanted signal components through temperature variations and process variation, they must always lie on the falling edge of the bandpass filter. This is achieved by not exactly adjusting the filter resonance to the ripple frequency but to a value of ca. 0.8 times the value. Thereby the desired signal still is in a range of very low losses compared to the resonance maximum while the first harmonic is already sufficiently reduced. f ELMOS Semiconductor AG rip VM ,IM = f VCO V M , I M 160 Specification 17/29 QM-No.: 03SP0394E.00 E910.94 The motor RPM n of the motor has the following relation to the ripple signal: n V M , IM = n V M , IM = f rip f rip VM ,IM p for even commutator count VM ,IM 2p for odd commutator count p : motor pole count The VCO controls both the bandpass and the second order lowpass filters, which filters the control voltage of the VCO. The DC amplification of the lowpass is typ. 0.6, the base frequency is at 1/400 of the clock frequency and therefore at nominal 0.4 of the ripple frequency. This ensures that at optimum dynamic adjustment of the VCO frequency the ripple signal itself is sufficiently suppressed to avoid a frequency modulation in the bandpass that could suppress the main signal. The VCO control voltage is limited to a minimum value of 0.3V once it passed the lowpass filter, so that the VCO has a finite limit frequency at VCRL = 0 already. Otherwise the control voltage would not reach the VCO and the system would not start up. 4.2.8.1 Dimensioning the Motor Model For the correct dimensioning of the values of RT and CT a series of measurements with representative motors in application relevant operation modes are necessary to establish the constants K1 and K2. n V M , I M =K1 V M K2 I M The motor constant K2 can be estimated with different load conditions at the same motor voltage VM as follows: K2= n1 n 2 I M2 I M1 In idle motion (IM = 0) the motor constant K1 is estimated with: K1= n0 VM n0 : idle motion RPM The amplification AV can be calculated with equation 4.2.1 as follows: AV = ELMOS Semiconductor AG R4 R3 R4 Specification 18/29 QM-No.: 03SP0394E.00 E910.94 After setting the value CT to 200 pF ≤ CT ≤ 470 pF RT can be calculated with the following equation: RT = 2 AV K1 p 160 [ ] ALP CT C par 3 5 C2 V REF The motor current amplification AI is calculated using the following equation: R Shunt AI = K2 RT 160 p 1 [ ] A LP CT C par 3 5 C2 1 V REF Simplified: K2 RT 160 p AI = RShunt A LP= CT C par 3 5 C2 V REF A LP C1LP =0,6 C2LP C par =20 pF V REF =3,3 V C2=2 pF CT , RShunt , AI , AV are set through the application circuit ELMOS Semiconductor AG Specification 19 /29 QM-No.: 03SP0394E.00 E910.94 4.2.9 Filter Gain In the SC bandpass filter the commutation signal is processed so it can be evaluated by the subsequent circuit for the detection of relative minima and maxima. The evaluation threshold between the two extremes is at typ. 100 mV with the motor current at 0, and rises with the voltage at OUTC by typ. 100mV/V. As different motor types generate quite different ripple amplitudes, the amplification of the bandpass filters can be programmed in four steps for adaptation purposes. The programming pins PROG1 and PROG 2 are to be connected to VDD or GND according to the scheme under AC parameters. A too weak amplification leads to the ripple signals not being detected under certain operating conditions, while a too high amplification causes the interfering signals to be amplified to a level where they can be interpreted as ripple pulses. The filter gain must be selected in a way that at lowest possible motor currents the peak-to-peak value of the ripple signal at the output of the bandpass filter is higher than twice the evaluation threshold (100 mV + 0.1 × OUTC) being generated at this current. At the pin BPO the bandpass output can be used for measuring purposes. To do this a pull-up resistance of ca. 100 kΩ needs to be connected between VDD and BPO. After gain adjustment this resistor shoud be disconnected and the pin BPO connected to GND. 4.2.10 Ripple Output At pin RIPOUT the output ripple signal appears in digital form. The open drain output has to be connected with an external pull-up resistance to the µP supply. This eliminates errors caused by supply offset. An internal diode to VDD is used as ESD and over voltage protection. In the reset and standby mode the output is inactive high, resulting in no current draw from the µP-supply. 4.2.11 STATUS Output At pin STATUS the status output signal is digital. The open drain output corresponds to the ripple output. ELMOS Semiconductor AG Specification 20/29 QM-No.: 03SP0394E.00 E910.94 4. 3 Application Circuit VBAT VCC VS VDD VREG VDD HS 7V HSHOT CRASH Ctrl. STATUS Slewrate controlled KL15 BS FET WDOG VDD Driver alternatively applicable ! LS PWM µC M LSHOT PWM Gen 5k / 20kHz PWMLP VMOT R3 R4 PROG1 PROG2 Filter RIPOUT & BPO VCO RT CT + SHUNT _ INNC RSHUNT VCLR OUTC R1 R2 Figure 5: Typical application 4. 4 ESD Protection Circuit VDD VDD INPUT OUTPUT GND GND Pins: 2,3,10,15,19,24 Pins: 1,5,6,11,12,13,18,20,21,22 INPUT OUTPUT GND Pins: 4,7,9,14,17 Figure 6: ESD Protection Circuit ELMOS Semiconductor AG Specification 21 /29 QM-No.: 03SP0394E.00 E910.94 4.4.1 ESD-Test Method The ESD protection circuits are measured according to MIL-STD-883C Method 3015 (Human Body Model) under following conditions: ÿ VIN ÿ REXT ÿ CEXT = 1000 Volt = 1500 Ohm = 100 pF 5 Package 5.1 Marking 5.1.1 Top Side Elmos (Logo) E91094A XXX # YWW * @ where E/ M/ T Volume Production/ Prototype/ Test Circuit 91094 Elmos Project Number A Version XXX Lot Number # Assembler Code YWW Year and week of Fabrication * Mask Revision Number @ Elmos Internal Marking 5.1.2 Botton Side No marking ELMOS Semiconductor AG Specification 22/29 QM-No.: 03SP0394E.00 E910.94 5.2 Package Dimensions SO24w N -BE Index Area H Detail 'B' 1 23 h X 45º Detail 'A' α L Detail 'B' e A D A1 -CSeating Plane Mould Parting Line C -A- B Detail 'A' Figure 7: Package Outline Symbol Description mm inch min typ typ max A - - 2.64 - - .104 Distance between the seating plane and the base plane A1 0.10 - - .004 - - Width of terminal leads, including lead finish B 0.36 - 0.51 .014 - .020 Coplanarity lead to lead b2 - - 0.10 - - .004 Thickness of leads measured in a plane perpendicular to the seating plane including lead finish. C 0.23 - 0.33 .009 - .013 The longest body dimension measured perpendicular to the body width E D 15.20 - 15.60 .598 - .614 The smallest body width dimension E 7.40 - 7.60 .291 - .299 Linear spacing between true lead positions which applies over the entire lead length or at the gauge plane e - 1.27 - - .050 - Largest overal package width dimension of mounted package H 10.11 - 10.65 .398 - .419 Body chamfer angle h 0.25 - 0.75 .010 - .029 Length of terminal for soldering to subtrate L 0.51 - 1.01 .020 - .040 Number of terminal positions N - 24 - - 24 - Angle of lead mounting area a 0º - 8º 0º - 8º Distance from the seating plane to the highest point of body ELMOS Semiconductor AG Specification 23/29 max min QM-No.: 03SP0394E.00 E910.94 6 Handling, Packaging 6.1 Handling The devices are ESD (Electro Static Discharge) sensitive and must be handled and processed in ESD protected working environments only. 6.2 Packaging SMD’s are also available on belts as per ELMOS specification QM-NR.: 02SP002.XX JEDEC Level 3 SMD’s are dry packed. ELMOS Semiconductor AG Specification 24/29 QM-No.: 03SP0394E.00 E910.94 7 Record of Revisions Chapter Rev. - 1 Change and Reason for Change Initial Revision ELMOS Semiconductor AG Specification 25/29 Date Released 10.05.2006 RAWA/ZOE QM-No.: 03SP0394E.00 E910.94 Contents 1 Pinout .................................................................................................................................................................................................... 2 1.1 Pin Description..................................................................................................................................................................................... 2 1.2 Package Pinout ................................................................................................................................................................................... 3 2 Operating Conditions .......................................................................................................................................................................... 3 2.1 Absolute Maximum Ratings ........................................................................................................................................................... 3 3 Detailed Electrical Specification ...................................................................................................................................................... 4 3.1 Parameter ............................................................................................................................................................................................ 4 3.2 DC Parameters ................................................................................................................................................................................... 4 3.2.1 Supply ................................................................................................................................................................................................. 4 3.2.2 Drivers ............................................................................................................................................................................................... 5 3.2.3 Over Temperature Shutdown .................................................................................................................................................... 5 3.2.4 Current Sense Amplifier............................................................................................................................................................... 6 3.2.5 VCO Control Voltage .................................................................................................................................................................... 6 3.2.6 SC-Lowpass Filter ........................................................................................................................................................................... 6 3.2.7 Motor PWM Generation ............................................................................................................................................................. 7 3.2.8 Digital Inputs ................................................................................................................................................................................. 7 3.2.9 Digital Outputs .............................................................................................................................................................................. 7 3.3 AC Parameters .................................................................................................................................................................................... 8 3.3.1 Drivers................................................................................................................................................................................................. 8 3.3.2 SC (switched capacitor) Filter ..................................................................................................................................................... 8 3.3.3 uPWM Input .................................................................................................................................................................................... 9 3.3.4 CRASH Input ................................................................................................................................................................................... 9 3.3.5 STATUS Output ............................................................................................................................................................................... 9 3.3.6 Undervoltage Shutdown ............................................................................................................................................................ 9 4 Functional Description ....................................................................................................................................................................... 10 4.1 Block Diagram ..................................................................................................................................................................................... 10 4.2 Detailed Functional Description .................................................................................................................................................. 11 4.2.1 Supply Voltage................................................................................................................................................................................. 11 4.2.2 States of Operation ....................................................................................................................................................................... 11 4.2.2.1 Standby Mode .............................................................................................................................................................................. 11 4.2.2.2 Run Mode ...................................................................................................................................................................................... 12 4.2.2.3 Motor Sport Mode ..................................................................................................................................................................... 12 4.2.2.4 Crash Shutdown ......................................................................................................................................................................... 13 4.2.3 PWM Generation ........................................................................................................................................................................... 14 4.2.4 Half Bridge Control ....................................................................................................................................................................... 15 4.2.5 Overvoltage Shutdown ................................................................................................................................................................ 15 4.2.6 Overtemperature Shutdown (optional) ................................................................................................................................. 16 4.2.7 Motor Current Sense Amplifier ................................................................................................................................................. 16 4.2.8 Ripple Detection ............................................................................................................................................................................ 17 4.2.8.1 Dimensioning the Motor Model ............................................................................................................................................ 18 4.2.9 Filter Gain ......................................................................................................................................................................................... 20 4.2.10 Ripple Output ................................................................................................................................................................................ 20 4.2.11 STATUS Output .............................................................................................................................................................................. 20 ELMOS Semiconductor AG Specification 26/29 QM-No.: 03SP0394E.00 E910.94 4. 3 Application Circuit ........................................................................................................................................................................... 21 4. 4 ESD Protection Circuit .................................................................................................................................................................... 21 4.4.1 ESD-Test Method ............................................................................................................................................................................ 22 5 Package .................................................................................................................................................................................................... 22 5.1 Marking.................................................................................................................................................................................................. 22 5.1.1 Top Side ............................................................................................................................................................................................... 22 5.1.2 Botton Side........................................................................................................................................................................................ 22 5.2 Package Dimensions SO24w .......................................................................................................................................................... 23 6 Handling, Packaging ............................................................................................................................................................................ 24 6.1 Handling ............................................................................................................................................................................................... 24 6.2 Packaging ............................................................................................................................................................................................ 24 7 Record of Revisions ............................................................................................................................................................................... 25 List of Figures Figure 1: Pinout ......................................................................................................................................................................................... Figure 2: Block diagram .......................................................................................................................................................................... Figure 3: State Diagram for Operation Modes ............................................................................................................................... Figure 4: Block diagram PWM generation ....................................................................................................................................... Figure 5: Typical application ................................................................................................................................................................. Figure 6: ESD Protection Circuit .......................................................................................................................................................... Figure 7: Package Outline ...................................................................................................................................................................... ELMOS Semiconductor AG Specification 27/29 3 9 13 14 21 21 23 QM-No.: 03SP0394E.00 E910.94 WARNING – Life Support Applications Policy ELMOS Semiconductor AG is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing ELMOS Semiconductor AG products, to observe standards of safety, and to avoid situations in which malfunction or failure of an ELMOS Semiconductor AG Product could cause loss of human life, body injury or damage to property. In development your designs, please ensure that ELMOS Semiconductor AG products are used within specified operating ranges as set forth in the most recent product specifications. General Disclaimer Information furnished by ELMOS Semiconductor AG is believed to be accurate and reliable. However, no responsibility is assumed by ELMOS Semiconductor AG for its use, nor for any infringements of patents or other rights of third parties, which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of ELMOS Semiconductor AG. ELMOS Semiconductor AG reserves the right to make changes to this document or the products contained therein without prior notice, to improve performance, reliability, or manufacturability . Application Disclaimer Circuit diagrams may contain components not manufactured by ELMOS Semiconductor AG, which are included as means of illustrating typical applications. Consequently, complete information sufficient for construction purposes is not necessarily given. The information in the application examples has been carefully checked and is believed to be entirely reliable. However, no responsibility is assumed for inaccuracies. Furthermore, such information does not convey to the purchaser of the semiconductor devices described any license under the patent rights of ELMOS Semiconductor AG or others. Copyright © 2006 ELMOS Semiconductor AG Reproduction, in part or whole, without the prior written consent of ELMOS Semiconductor AG, is prohibited. ELMOS Semiconductor AG Specification 28/29 QM-No.: 03SP0394E.00 ELMOS Semiconductor AG – Headquarters Heinrich-Hertz-Str. 1 | 44227 Dortmund | Germany Phone + 49 (0) 231 - 75 49 - 0 | Fax + 49 (0) 231 - 75 49 - 149 [email protected] | www.elmos.de 29/29