XP202A0003MR-G ETR1128-004 P-channel 4V (G-S) MOSFET ■FEATURES ■APPLICATIONS ・Low On Resistance ・Ultra High Speed Switching ・-4V Driving ・EU RoHS Compliant, Pb Free ● Switching ■PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP202A0003MR-G SOT-23 3,000/Reel * The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant. ■ ABSOLUTE MAXIMUM RATINGS PARMETER SYMBOL RATINGS ■PIN CONFIGURATION UNITS Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±20 V A Drain Current (DC) ID -3 Drain Current(Pulse)(* 1) IDP -12 A Channel Power Dissipation (*2) Pd 1 W Channel Temperature Tch +150 ℃ Storage Temperature Tstg - 55 ~ +150 ℃ 1. Gate 2. Source 3. Drain SOT-23(TOP VIEW） ( 1) * PW≦10μs,duty cycle≦1% * Ceramic Board (900mm2×0.8mm) Mounting ( 2) ■ ELECTRICAL CHARACTERISTICS SYMBOL Drain-Source Breakdown Voltage V(BR)DSS ID=-1mA, VGS=0V -30 - - V Drain-Source Cut-Off Current IDSS VDS=-30V, VGS=0V - - -1 μA Gate-Source Leakage Current IGSS VGS=±16V,VDS=0V - - ±10 μA Gate-Source Cut-Off Voltage VGS(off) VDS=-10V,ID=-1mA -1.2 - -2.6 V Forward Transfer Admittance |yfs| VDS=-10V,ID=-3A - 8.0 - S Drain-Source ON Resistance TEST CONDITIONS LIMITS PARAMETER MIN. TYP. MAX. UNITS RDS(ON)1 ID=-1.5A,VGS=-10V - 45 - mΩ RDS(ON)2 ID=-1.0A,VGS=-4.5V - 67 - mΩ - mΩ - pF - pF - pF - ns - ns - ns - ns - nC - nC - nC -1.2 V Feedback capacity Crss VDS=-10V,f=1MHz - Turn on Delay time td(on) - Rise Time tr Turn off Delay Time td(off) Fall Time tf - 76 435 110 85 6 12 28 10 10 1.2 2.2 - -0.8 RDS(ON)3 ID=-1.0A,VGS=-4V - Input Capacity Ciss VDS=-10V,f=1MHz - Output Capacity Coss VDS=-10V,f=1MHz - All Gate Charge Amount Qg Gate Source Charge Amount Qgs Gate Drain Charge Amount Qgd ID=-1A ID=-1A ID=-1A ID=-1A VDS=-15V, VGS=-10V, ID=-3A VDS=-15V, VGS=-10V, ID=-3A VDS=-15V, VGS=-10V, ID=-3A Diode Forward Voltage VSD IS=-3A, VGS=0V - 1/5 XP202A0003MR-G ■SWITCHING-TIME TEST CIRCUIT 0V 90% S 50Ω VI VI 10% G 0V 90% Oscilloscope D VO 90% VO 10% RL 10% td(off) tf td(on) tr Oscilloscope ■PACKAGING INFORMATION ■EQUIVALENT CIRCUIT ●SOT-23 ■MARKING RULE ① represents product series 3 ① 1 ② ③ ④ MARK PRODUCT SERIES 6 XP202*******-G ⑤ 2 ② ③ represents product group and number MARK PRODUCT PRODUCT GROUP NUMBER ② ③ A D 00 03 PRODUCT SERIES XP202A0003**-G ④，⑤ represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, ZA to ZZ repeated (G, I, J, O, Q, W excluded) 2/5 XP202A0003MR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (1) Drain Current vs. Drain-Source Voltage (2) Drain Current vs. Drain-Source Voltage XP202A0003MR XP202A0003MR Ta= 25℃， Pulse Test -4.0 -5 Drain Current： ID (A) -16.0V -10.0V -3.0 -6.0V -2.5 -4.5V -2.0 -1.5 -4.0V -3.5V -3.0V -1.0 -0.5 V GS= -2.5V 0.0 -0.2 -0.4 -0.6 -0.8 -4 -3 Ta= 75℃ -2 Ta= 25℃ -1 Ta= -25℃ 0 0.0 0.0 -1.0 0.5 1.0 1.5 XP202A0003MR Static Drain-source On-State Resistance：RDS(on) （ｍΩ) Static Drain-source On-State Resistance: RDS (on) (ｍΩ) 200 ID= -1.5A ID= -1.0A 50 0 -2 -4 -6 -8 3.5 4.0 140 250 0 3.0 XP202A0003MR Ta= 25℃ 300 100 2.5 (4) Drain-Source On-State Resistance vs. Ambient Temperature (3) Drain-Source On-State Resistance vs. Gate-Source Voltage 150 2.0 Gate-Source Voltage： V GS (V) Drain-Source Voltage： V DS (V) V GS= -4.0V, ID= -1.0A 120 100 V GS= -4.5V, ID= -1.5A 80 60 40 20 V GS= -10V, ID= -1.5A 0 -50 -25 -10 -12 -14 -16 Gate-Source Voltage： V GS (V) 0 50 75 100 125 150 (6) Source Current vs. Diode Forward Voltage XP202A0003MR XP202A0003MR VDS= -10V 100 25 Ambient Temperature： Ta ( ℃) (5) Forward Transfer Admittance vs. Drain Current VGS= 0V 10 Ta= 75℃ Ta= -25℃ Source Current： IS (A) Forward Transfer Admittance ： |yfs| (S) Drain Current： ID (A) -3.5 VDS= -10V， Pulse Test -6 10 Ta=25℃ 1 0.1 0.01 Ta=75℃ 0.1 1 Drain Current： ID (A) 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 Diode Forw ard Voltage： V SD (V) 3/5 XP202A0003MR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (8) Ciss, Coss, Crss vs. Drain-Source Voltage (7) Switching Time vs. Drain Current XP202A0003MR XP202A0003MR VGS= -10V, VDS= -15V 1000 f=1MHz 1000 tf Ciss, Coss, Crss (pF) 100 td(off) tr 10 td(on) 1 Coss 100 Crss 10 0.1 1 10 0 5 Drain Current： ID (A) 10 15 25 30 (10) Area of Safe Operation XP202A0003MR XP202A0003MR VDS= -15V, ID = -3A -10 100 -9 Drain Current: ID (A) -8 -7 -6 -5 -4 -3 -2 Operation in this area is limited by RDS(on) ID =-12A 10 ID =-3A 0.1ms 1 1ms 10ms 0.1 -1 Ta=25℃ Single pulse When mounted on ceramic substrate 100ms 1000ms DC Operation 2 0 0 1 2 3 4 5 6 7 8 Gate Charge: Qg (nc) 4/5 20 Drain-Source Voltage： V DS (V) (9) Gate-Source Voltage vs. Gate Charge Gate-Source Voltage： V GS (V) Switching Time： t (ns) Ciss 9 10 0.01 0.01 (900mm X 0.8mm) 0.1 1 10 Drain-Source Voltage: V DS (V) 100 XP202A0003MR-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 5/5