ONSEMI MCH6613-TL-E

Ordering number : EN6920C
MCH6613
Power MOSFET
http://onsemi.com
30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6
Features
•
•
•
The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting
Excellent ON-resistance characteristic
1.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Storage Temperature
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
P-channel
Unit
30
--30
V
±10
±10
V
0.35
--0.2
A
1.4
--0.8
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
A
0.8
W
Tch
150
°C
Tstg
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
unit : mm (typ)
7022A-006
6
5
Package
Shipping
memo
MCH6613-TL-E
MCPH6
SC-88, SC-70-6, SOT-363
3,000
pcs./reel
Pb-Free
Packing Type : TL
2
TL
3
0.65
FM
LOT No.
0 to 0.02
1
Marking
4
LOT No.
0.25
MCH6613-TL-E
0.15
2.1
1.6
0.25
2.0
Device
0.3
0.07
0.85
Electrical Connection
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
MCPH6
6
5
4
1
2
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71013 TKIM TC-00002962/71112 TKIM/52506PE MSIM TB-00002278/52101 TSIM TA-324 No.6920-1/8
MCH6613
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
ID=1mA, VGS=0V
VDS=30V, VGS=0V
30
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
0.4
VDS=10V, ID=80mA
150
V
1
μA
±10
μA
1.3
220
V
mS
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Ω
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
Ω
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Ω
7.0
pF
5.9
pF
2.3
pF
td(on)
19
ns
Rise Time
tr
65
ns
Turn-OFF Delay Time
td(off)
155
ns
Fall Time
tf
120
ns
Total Gate Charge
Qg
1.58
nC
Gate to Source Charge
Qgs
0.26
nC
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=10V, ID=150mA
0.31
0.87
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
--30
V
VDS=--30V, VGS=0V
VGS=±8V, VDS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--100μA
--0.4
VDS=--10V, ID=--50mA
80
RDS(on)1
ID=--50mA, VGS=--4V
8
10.4
Ω
RDS(on)2
ID=--30mA, VGS=--2.5V
11
15.4
Ω
RDS(on)3
ID=--1mA, VGS=--1.5V
27
54
Ciss
--1.4
110
V
mS
Ω
7.5
pF
Output Capacitance
Coss
5.7
pF
Reverse Transfer Capacitance
Crss
1.8
pF
Turn-ON Delay Time
td(on)
24
ns
Rise Time
tr
55
ns
Turn-OFF Delay Time
td(off)
120
ns
Fall Time
tf
130
ns
Total Gate Charge
Qg
1.43
nC
Gate to Source Charge
Qgs
0.18
nC
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--10V, ID=--100mA
0.25
IS=--100mA, VGS=0V
--0.83
nC
--1.2
V
No.6920-2/8
MCH6613
Switching Time Test Circuit
[N-channel]
[P-channel]
VDD=15V
VIN
ID=80mA
RL=187.5Ω
D
VIN
VOUT
VIN
PW=10μs
D.C.≤1%
G
ID= --50mA
RL=300Ω
P.G
ID -- VDS
ID -- VDS
--0.10
2.
--3.5V
V
0.10
0.08
VGS=1.5V
0.06
0.04
--4
.
V
.5
--2
V
Drain Current, ID -- A
--0.08
[Pch]
--0.07
--6.0
V
2
3.0
4.0V
--0.09
.0V
6.0
Drain Current, ID -- A
3.5V
S
[Nch]
5V
0.16
MCH6613
50Ω
S
0V
MCH6613
50Ω
0.12
VOUT
G
P.G
0.14
D
VIN
--3
.
PW=10μs
D.C.≤1%
0V
--4V
0V
4V
0V
VDD= --15V
--2.0V
--0.06
--0.05
--0.04
--0.03
VGS= --1.5V
--0.02
0.02
--0.01
0
0
0.4
0.5
0.6
0.7
0.8
0.9
Drain to Source Voltage, VDS -- V
°C
--25
Drain Current, ID -- A
°C
--0.8
--1.0
--1.2
--1.4
--1.6
ID -- VGS
--1.8
--2.0
IT00077
[Pch]
VDS= --10V
--0.16
25
°C
Ta=
0.20
--0.6
--0.20
--0.18
75
Drain Current, ID -- A
0.25
--0.4
Drain to Source Voltage, VDS -- V
[Nch]
VDS=10V
--0.2
IT00029
ID -- VGS
0.30
0
1.0
0.15
0.10
--25
°C
0.3
--0.14
25°C
--0.12
C
0.2
Ta=
0.1
--0.10
75°
0
--0.08
--0.06
--0.04
0.05
--0.02
0
0
0
0.5
1.0
1.5
2.0
Gate to Source Voltage, VGS -- V
2.5
3.0
IT00030
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
Gate to Source Voltage, VGS -- V
--3.5
--4.0
IT00078
No.6920-3/8
MCH6613
RDS(on) -- VGS
10
[Nch]
RDS(on) -- VGS
30
[Pch]
Ta=25°C
Ta=25°C
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
9
8
7
6
80mA
5
4
ID=40mA
3
2
1
0
1
2
3
4
5
6
7
8
9
IT00031
ID= --30mA
--50mA
10
5
RDS(on) -- ID
[Nch]
0
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
5
Ta=75°C
25°C
--25°C
2
1.0
0.01
2
3
5
7
0.1
2
3
Drain Current, ID -- A
--25°C
2
3
5
7
2
0.1
3
Drain Current, ID -- A
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
3
2
Ta=75°C
7
5
--25°C
3
25°C
2
1.0
0.001
2
3
5
7
0.01
Drain Current, ID -- A
2
Ta=75°C
10
7
--25°C
5
2
3
25°C
3
2
2
3
5
7
--0.1
5
IT00034
2
3
IT00080
RDS(on) -- ID
[Pch]
VGS= --2.5V
5
3
2
Ta=75°C
25°C
10
--25°C
7
5
3
2
2
3
5
7
--0.1
2
3
IT00081
RDS(on) -- ID
[Pch]
VGS= --1.5V
7
5
10
[Pch]
1000
VGS=1.5V
7
--10
VGS= --4V
Drain Current, ID -- A
[Nch]
--9
3
1.0
--0.01
5
--8
RDS(on) -- ID
IT00033
RDS(on) -- ID
100
--7
IT00079
100
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Ta=75°C
2
--6
7
25°C
1.0
0.01
--5
Drain Current, ID -- A
[Nch]
7
3
--4
5
1.0
--0.01
5
VGS=2.5V
5
--3
Gate to Source Voltage, VGS -- V
IT00032
RDS(on) -- ID
10
--2
7
7
3
--1
100
VGS=4V
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
15
10
Gate to Source Voltage, VGS -- V
10
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
20
0
0
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
25
5
3
2
100
7
5
Ta=75°C
3
2
10
--0.0001
--25°C
2
3
25°C
5
7
--0.001
Drain Current, ID -- A
2
3
IT00082
No.6920-4/8
MCH6613
RDS(on) -- Ta
18
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
6
5
V
5
=2.
V GS
A,
V
40m
=4.0
I D=
, VGS
A
80m
I D=
4
3
2
1
--40
--20
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
5
25°C
25°C
Ta= -75°C
2
0.1
7
5
3
2
0.01
0.01
2
3
5
7
2
0.1
3
Drain Current, ID -- A
4
--40
--20
0
20
40
60
80
100
120
140
160
IT00083
| yfs | -- ID
[Pch]
VDS= --10V
3
2
0.1
25°C
5°C
2
Ta= --
7
75°C
5
3
2
0.01
--0.01
2
3
5
7
2
--0.1
Drain Current, ID -- A
IS -- VSD
5
3
IT00084
[Pch]
VGS=0V
VGS=0V
3
7
5
3
--0.1
7
5
3
2
0.6
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
7
[Nch]
VDD=15V
VGS=4V
3
td (off)
tf
2
100
7
tr
5
3
td(on)
2
2
3
5
7
Drain Current, ID -- A
0.1
2
IT00038
--0.6
--0.7
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
IT00037
--1.1
IT00085
SW Time -- ID
1000
[Pch]
VDD= --15V
VGS= --4V
7
Switching Time, SW Time -- ns
5
--0.01
--0.5
1.2
C
0.1
--25°
75
°C
25
°C
--2
5°C
2
2
25°C
Source Current, IS -- A
3
Ta
=
Source Current, IS -- A
6
5
5
2
Switching Time, SW Time -- ns
A,
= -V GS
7
5
10
0.01
V
4.0
50m
-I D=
8
1.0
[Nch]
7
0.01
0.5
10
IT00036
IS -- VSD
1.0
30m
-I D=
5°C
Forward Transfer Admittance, | yfs | -- S
7
= -V GS
Ambient Temperature, Ta -- °C
[Nch]
VDS=10V
3
A,
12
IT00035
| yfs | -- ID
1.0
V
2.5
14
2
--60
160
[Pch]
16
Ta=
7
0
--60
RDS(on) -- Ta
[Nch]
Forward Transfer Admittance, | yfs | -- S
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
7
5
3
2
tf
td(off)
100
7
tr
5
td(on)
3
2
10
--0.01
2
3
5
Drain Current, ID -- A
7
--0.1
IT00086
No.6920-5/8
MCH6613
Ciss, Coss, Crss -- VDS
100
7
100
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
5
3
2
10
Ciss
7
Coss
5
3
2
10
Ciss
7
Coss
5
3
3
Crss
2
2
Crss
1.0
1.0
0
2
4
6
8
10
12
14
16
18
Drain to Source Voltage, VDS -- V
--5
Gate to Source Voltage, VGS -- V
7
6
5
4
3
2
1
--20
--30
IT00087
[Pch]
VDS= --10V
ID= --100mA
--8
--7
--6
--5
--4
--3
--2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
IT00040
ASO
[Nch]
2
0.2
0
1.6
7
IDP=1.4A(PW≤10μs)
0.6
0.8
1.0
1.2
10m
ID=0.35A
s
3
DC
2
7
5
3
100
ms
ope
rat
Operation in
this area is
limited by RDS(on).
0.1
Drain Current, ID -- A
7
ion
ASO
[Pch]
1m
0.01
2
1.0
3
0.8
Wh
en
5
mo
ms
3
ID= --0.2A
2
10
DC
--0.1
0m
s
op
era
tio
7
n
Operation in this
area is limited by RDS(on).
5
7
2
10
2
3
5
IT02877
Drain to Source Voltage, VDS -- V
PD -- Ta
[Pch, Nch]
1.0
s
10
3
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)1unit
2
1.6
IT00088
1m
s
1.4
Total Gate Charge, Qg -- nC
IDP= --0.8A(PW≤10μs)
5
1.0
0.4
--1.0
3
5
--25
--1
0
Drain Current, ID -- A
--15
VGS -- Qg
--10
--9
8
--10
Drain to Source Voltage, VDS -- V
[Nch]
VDS=10V
ID=150mA
9
0
20
IT00039
VGS -- Qg
10
Allowable Power Dissipation, PD -- W
[Pch]
f=1MHz
7
5
Gate to Source Voltage, VGS -- V
Ciss, Coss, Crss -- VDS
[Nch]
f=1MHz
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)1unit
--0.01
--1.0
2
3
5
7
--10
2
Drain to Source Voltage, VDS -- V
3
5
IT02878
un
0.6
ted
on
cer
am
ic s
ub
0.4
str
ate
(90
0m
m2
✕0
.8m
m)
0.2
1u
nit
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02879
No.6920-6/8
MCH6613
Outline Drawing
MCH6613-TL-E
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.6920-7/8
MCH6613
Note on usage : Since the MCH6613 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6920-8/8