ROHM UMZ36N

Data Sheet
Zener Diode
UMZ36N
lApplications
Voltage regulation
(Anode common dual chips)
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
0.9MIN.
0.8MIN.
0.3±0.1
各リードとも
Each lead has same dimension
同寸法
lFeatures
1)Small mold type. (UMD3)
2)High reliability
0.65
0.15±0.05
1.6
2.0±0.2
2.1±0.1
1.25±0.1
(3)
1.3
UMD3
lConstruction
Silicon epitaxial planer
0.1Min
0～0.1
(2)
(1)
（0.65）
（0.65）
lStructure
0.7±0.1
1.3±0.1
0.9±0.1
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot (year week factory)
lTaping dimensions (Unit : mm)
φ 1.55±0.05
2.0±0.05
0.3±0.1
2.25±0.1
0
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
Power dissipation (*1)
P
Junction temperature
Tj
Storage temperature
Tstg
(*1)Total of 2 elements
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VZ
Zener voltage
Reverse current
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IR
φ 0.5±0.05
4.0±0.1
Limits
200
150
2.4±0.1
5.5±0.2
8.0±0.2
1.25±0.1
Unit
mW
C
C
-55 to +150
Min.
Typ.
Max.
35.07
-
36.87
V
-
-
0.10
μA
1/3
0～0.1
2.4±0.1
3.5±0.05
1.75±0.1
4.0±0.1
Unit
Conditions
IZ=5mA
VR=27V
2011.11 - Rev.A
Data Sheet
UMZ36N
10
10000
Ta=150°C
Ta=125°C
REVERSE CURRENT:IR (pA)
Ta=25°C
ZENER CURRENT:Iz(mA)
Ta=125°C
1
Ta=75°C
Ta=150°C
0.1
1000
100
Ta=75°C
10
Ta=25°C
0.01
1
30
35
40
45
0
ZENER VOLTAGE:Vz(V)
6
9
12
15
18
21
24
27
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
40
f=1MHz
Ta=25°C
IZ=5mA
n=30pcs
39.5
39
ZENER VOLTAGE:Vz(Ｖ)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
3
10
38.5
38
37.5
37
AVE:36.17V
36.5
36
35.5
1
35
0
1
2
3
4
5
6
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Vz DISPERSION MAP
10
45
Ta=25°C
VR=27V
n=30pcs
REVERSE CURRENT:IR(pA)
40
35
30
25
20
15
AVE:6.57pA
10
5
CAPACITANCE BETWEENTERMINALS:Ct(pF)
50
0
Ta=25°C
f=1MHz
VR=0V
n=10pcs
9
8
AVE:8.79pF
7
6
5
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
Ct DISPERSION MAP
2/3
2011.11 - Rev.A
Data Sheet
UMZ36N
1000
10000
Rth(j-a)
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
DYNAMIC IMPEDANCE:Zz(Ω)
On glass-epoxy substrate
1000
100
10
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
Rth(j-c)
100
10
0.001
10
0.01
0.1
1
10
100
1000
Time:t(s)
Rth-t CHARACTERISTICS
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
AVE：.19.7kV
15
10
AVE：.3.88kV
5
0
C=200pF
C=150pF
C=100pF
R=0Ω
R=330Ω
R=1.5kΩ
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.11 - Rev.A
Notice
Notes
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R1120A