ROHM DAN217UM

Data Sheet
Switching Diode
DAN217UM
lApplications
High speed switching
lDimensions (Unit : mm)
lLand size figure (Unit : mm)
lFeatures
1)Small mold, flat lead type. (UMD3F)
2)High reliability
lConstruction
Silicon epitaxial planer
lStructure
ROHM : UMD3F
dot (year week factory)
2.4±0.08
0～0.5
φ 0.5±0.05
4.0±0.1
1.15±0.1
2.2±0.08
lAbsolute maximum ratings (Ta=25C)
Parameter
Symbol
VRM
Reverse voltage (repetitive)
VR
Reverse voltage (DC)
IFM
Forward voltage(repetitive peak)
Average rectified forward current
Io
Isurge
Surge current(t=1s)
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Rated in slash put frequency
f
lElectrical characteristics (Ta=25C)
Parameter
Symbol
VF
Forward voltage
0.3±0.1
8.0±0.2
4.0±0.1
3.5±0.05
2.0±0.05
5.5±0.2
φ 1.55±0.05
1.75±0.1
lTaping dimensions (Unit : mm)
Limits
80
80
300
100
4
200
150
-55 to +150
100
Unit
V
V
mA
mA
A
mW/Total
C
C
MHz
Min.
Typ.
Max.
Unit
Conditions
-
-
1.2
V
IF=100mA
Reverse current
Capacitance between terminals
IR
-
-
0.2
μA
VR=70V
Ct
-
-
3.5
pF
Reverse recovery time
trr
-
-
4.0
ns
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.12 - Rev.A
100000
10
REVERSE CURRENT:IR(nA)
100
FORWARD CURRENT:IF(mA)
Data Sheet
DAN217UM
Ta=125°C
Ta=75°C
1
Ta=25°C
Ta=125°C
10000
1000
Ta=75°C
100
Ta=25°C
10
0.1
1
Ta=-25°C
0.1
0.01
0
0.2
0.4
0.6
0.8
0
1
20
40
60
10
945
FORWARD VOLTAGE:VF(mV)
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
80
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
1
Ta=25°C
IF=100mA
n=10pcs
935
AVE: 934mV
925
0.1
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
Ta=25°C
VR=80V
n=10pcs
40
30
20
AVE: 7.0nA
Ta=25°C
VR=0.5V
f=1MHz
n=10pcs
0.9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE CURRENT:IR(nA)
50
0.7
0.5
AVE: 0.64 pF
0.3
10
0
0.1
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.12 - Rev.A
5
5
4
REVERSE RECOVERY TIME:trr(ns)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Data Sheet
DAN217UM
IFSM
8.3ms
1cyc
3
2
AVE:2.4A
1
VR=6V
IF=10mA
RL=100Ω
4
AVE:2.46ns
3
2
1
0
0
IFSM DISPERSION MAP
trr DISPERSION MAP
100
100
8.3ms
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
IFSM
8.3ms
1cyc
10
1
IFSM
t
10
1
0.1
1
10
0.1
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
Rth(j-a)
100
Rth(j-c)
10
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
100
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
Mounted on epoxy board
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
20
1000
1
0.001
1
1000
15
AVE:9.9kV
10
5
AVE:2.3kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
3/3
2011.12 - Rev.A
Notice
Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A