Data Sheet Bi direction ESD Protection Diode RSB6.8SM Applications ESD Protection Dimensions (Unit : mm) 0.8 0.120.05 0.6 0.80.05 Land size figure (Unit : mm) 1.60.1 1.20.05 1.7 Features 1)Ultra small mold type. (EMD2) 2)Bi-directionality. 3)High reliability. 4)By chip-mounter,automatic mounting is possible. EMD2 Construction Silicon epitaxial planer 0.30.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) dot (productNo.) Structure 0.60.1 Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Symbol Peak pulse power(tp=10×1000μs) Ppk Power dissipation P Junction temperature Tj Storage temperature Tstg Operation temperature range Topor Electrical characteristics (Ta=25°C) Parameter Symbol Vz Zener voltage Limits 10 150 150 −55 to +150 −55 to +150 Unit W mW °C °C °C Min. Typ. Max. Unit 5.78 - 7.82 V IZ=1mA VR=3.5V VR=0V , f=1MHz Reverse current IR - - 0.5 μA Capacitance between terminals Ct - 30.0 - pF www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 Conditions 2011.11 - Rev.A Data Sheet RSB6.8SM 10 10 apply voltage apply voltage 1 ZENER CURRENT:Iz(mA) ZENER CURRENT:Iz(mA) 1 Ta=125°C 0.1 Ta=75°C Ta=25°C 0.01 0.1 Ta=125°C Ta=75°C 0.01 Ta=25°C Ta=−25°C Ta=−25°C 0.001 0.001 5 6 7 8 5 6 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) 1000 8 100 apply voltage apply voltage 100 10 REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR (nA) 7 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(2) 10 Ta=125°C 1 0.1 Ta=75°C 0.01 0.1 Ta=75°C 0.01 Ta=25°C 0.001 Ta=25°C 0.001 Ta=125°C 1 0.0001 0.0001 0 1 2 3 4 5 0 1 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(1) 2 3 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS(2) 100 100 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz apply voltage 10 apply voltage 10 0 1 2 3 4 5 0 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(2) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS(1) 2/4 2011.11 - Rev.A Data Sheet RSB6.8SM 7.2 600 Ta=25°C IZ=1mA n=30pcs 560 REVERSE CURRENT:IR(pA) ZENER VOLTAGE:Vz(Ｖ) 7.1 AVE:6.99V AVE:6.84V Ta=25°C VR=3.5V n=30pcs 580 7.0 6.9 540 AVE:482.5pA 520 500 AVE:536.6pA 480 460 6.8 440 apply voltage apply voltage apply voltage 6.7 400 IR DISPERSION MAP Vz DISPERSION MAP 10000 40 Ta=25°C f=1MHz VR=0V n=10pcs 39 38 DYNAMIC IMPEDANCE:Zz(Ω) CAPACITANCE BETWEENTERMINALS:Ct(pF) apply voltage 420 37 36 35 34 AVE：37.11pF AVE：37.05pF 33 32 apply voltage 1000 100 apply voltage 10 apply voltage 31 1 30 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(1) Ct DISPERSION MAP 1000 10000 TRANSIENT THERMAL IMPEDANCE：Rth(°C/W) On glass-epoxy substrate DYNAMIC IMPEDANCE:Zz(Ω) 10 1000 100 apply voltage 10 0.1 1 ZENER CURRENT(mA) Zz-Iz CHARACTERISTICS(2) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 3/4 Rth(j-c) 100 10 0.001 1 Rth(j-a) 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 2011.11 - Rev.A Data Sheet RSB6.8SM 30 30 No break at 30kV No break at 30kV 25 20 15 AVE：9.9kV apply voltage 10 ELECTROSTATIC DISCHARGE TEST ESD [kV] ELECTROSTATIC DISCHARGE TEST ESD [kV] 25 5 0 20 15 AVE：8.5kV apply voltage 10 5 C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ 0 ESD DISPERSION MAP(1) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0Ω C=150pF R=330Ω C=100pF R=1.5kΩ ESD DISPERSION MAP(2) 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A