ROHM RSB68ZS

Data Sheet
Bi direction ESD Protection Diode
RSB6.8ZS
8
0～0.03
0.3±0.06
0.27±0.03
0.27±0.03
Land size figure (Unit : mm)
Constructions
Silicon epitaxial planer
0.19±0.03
Features
1)Ultra small mold type.(GMD2)
2)Bi-directionality.
3)High reliability.
4)By chip-mounter,automatic
mounting is possible.
0.38±0.03
Dimensions (Unit : mm)
0.6±0.05
Applications
ESD Protection
ROHM : GMD2
JEDEC : JEITA : dot(year week factory)
Structure
0.38
0.23
0.31
GMD2
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
P
Junction temperature
Tj
Storage temperature
Tstg
Operation temperature range
Topor
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Vz
Zener voltage
Reverse current
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© 2011 ROHM Co., Ltd. All rights reserved.
IR
Limits
100
150
−55 to +150
−55 to +150
Unit
mW
°C
°C
°C
Min.
Typ.
Max.
Unit
5.78
-
7.82
V
-
-
0.5
μA
1/4
Conditions
IZ=1mA
VR=3.5V
2011.11 - Rev.A
Data Sheet
RSB6.8ZS
10
10
apply voltage
apply voltage
0.1
Ta=125°C
Ta=75°C
0.01
1
ZENER CURRENT:Iz(mA)
ZENER CURRENT:Iz(mA)
1
0.1
Ta=125°C
Ta=75°C
0.01
Ta=25°C
Ta=25°C
Ta=−25°C
Ta=−25°C
0.001
0.001
6
6.2
6.4
6.6
6.8
7
7.2
7.4
7.6
6
6.2
6.4
100000
6.8
7
7.2
7.4
7.6
100000
apply voltage
apply voltage
Ta=75°C
10000
REVERSE CURRENT:IR (pA)
10000
REVERSE CURRENT:IR (pA)
6.6
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(2)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(1)
Ta=125°C
1000
100
10
Ta=75°C
1
Ta=125°C
1000
100
10
Ta=25°C
1
Ta=25°C
0.1
0.1
0.01
0.01
0
1
2
3
4
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS(1)
5
0
10
1
2
3
4
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS(2)
5
10
f=1MHz
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
apply voltage
1
apply voltage
1
0
1
2
3
4
0
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© 2011 ROHM Co., Ltd. All rights reserved.
1
2
3
4
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(2)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(1)
2/4
2011.11 - Rev.A
Data Sheet
RSB6.8ZS
7.2
100
Ta=25°C
IZ=1mA
n=30pcs
ZENER VOLTAGE:Vz(V)
7.1
90
7.1
AVE:6.93V
7.0
7.0
AVE:7.04V
6.9
6.9
apply voltage
Ta=25°C
VR=3.5V
n=30pcs
95
REVERSE CURRENT:IR(pA)
7.2
apply voltage
85
80
AVE:88.9pA
75
AVE:63.2pA
70
65
apply voltage
6.8
60
6.8
55
6.7
50
IR DISPERSION MAP
Vz DISPERSION MAP
1000
7
DYNAMIC IMPEDANCE:Zz(Ω)
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
8
6
5
AVE：6.17pF
AVE：6.19pF
4
3
apply voltage
2
100
10
apply voltage
Ta=25°C
f=1MHz
VR=0V
n=10pcs
1
1
0
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(1)
Ct DISPERSION MAP
10
1000
1000
On glass-epoxy substrate
TRANSIENT
THERMAL IMPEDANCE：Rth(°C/W)
DYNAMIC IMPEDANCE:Zz(Ω)
Rth(j-a)
100
10
apply voltage
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(2)
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© 2011 ROHM Co., Ltd. All rights reserved.
100
10
0.001
1
0.1
Rth(j-c)
10
3/4
0.01
0.1
1
10
TIME:t(s)
Rth-t CHARACTERISTICS
100
1000
2011.11 - Rev.A
Data Sheet
RSB6.8ZS
30
30
AVE：29.1kV
25
AVE：27.9kV
20
15
AVE：15.1kV
10
apply voltage
5
AVE：2.0kV
0
C=200pF
R=0Ω
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
25
20
15
10
apply voltage
5
C=150pF
R=330Ω
0
C=100pF
R=1.5kΩ
ESD DISPERSION MAP(1)
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© 2011 ROHM Co., Ltd. All rights reserved.
AVE：22.2kV
AVE：2.0kV
C=200pF
R=0Ω
C=150pF
R=330Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP(2)
4/4
2011.11 - Rev.A
Notice
Notes
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R1120A