CEM2281

CEM2281
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -7.2A, RDS(ON) = 30mΩ @VGS = -4.5V.
RDS(ON) = 43mΩ @VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
D
D
D
8
7
6
5
1
S
2
S
3
S
4
G
Surface mount Package.
SO-8
1
ABSOLUTE MAXIMUM RATINGS
TA = 25 C unless otherwise noted
Symbol
Limit
Drain-Source Voltage
VDS
-20
Units
V
Gate-Source Voltage
VGS
±12
V
ID
-7.2
A
IDM
-30
A
PD
2.5
W
TJ,Tstg
-55 to 150
C
Symbol
Limit
Units
RθJA
50
C/W
Parameter
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2006.July
http://www.cetsemi.com
CEM2281
P-Channel Electrical Characteristics
Parameter
TA = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250µA
-20
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = -20V, VGS = 0V
-1
µA
IGSSF
VGS = 12V, VDS = 0V
100
nA
IGSSR
VGS = -12V, VDS = 0V
-100
nA
Off Characteristics
V
On Characteristics c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = -250µA
-1.3
V
VGS = -4.5V, ID = -7.2A
-0.5
25
30
mΩ
VGS = -2.5V, ID = -5.7A
33
43
mΩ
Dynamic Characteristics d
Forward Transconductance
gFS
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = -1.8V, ID = -7.2A
VDS = -15V, VGS = 0V,
f = 1.0 MHz
41
S
2035
pF
295
pF
200
pF
Switching Characteristics d
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
11
VDD = -10V, ID = -1A,
VGS = -4.5V, RGEN = 24Ω
22
ns
10
20
ns
356
712
ns
Turn-Off Fall Time
tf
110
220
ns
Total Gate Charge
Qg
19
25
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = -16V, ID = -4.7A,
VGS = -4.5V
4.3
nC
2.6
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
IS
Drain-Source Diode Forward Voltage c
VSD
VGS = 0V, IS = -2.1A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
-7.2
A
-1.2
V
CEM2281
25
15
25 C
-ID, Drain Current (A)
-ID, Drain Current (A)
-VGS=4.5,4V
20
-VGS=3V
15
10
5
12
9
6
TJ=125 C
3
-55 C
-VGS=2V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
Ciss
1200
Coss
600
Crss
10
15
20
25
30
1.8
2.2
1.9
ID=-6.5A
VGS=-4.5V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
-IS, Source-drain current (A)
VTH, Normalized
Gate-Source Threshold Voltage
5
ID=-250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
1.5
Figure 2. Transfer Characteristics
1800
1.2
1.2
Figure 1. Output Characteristics
2400
1.3
0.9
-VGS, Gate-to-Source Voltage (V)
3000
0
0.6
-VDS, Drain-to-Source Voltage (V)
3600
0
0.3
VGS=0V
10
10
10
-25
0
25
50
75
100
125
150
1
0
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
5 V =-16V
DS
ID=-4.7A
4
-ID, Drain Current (A)
-VGS, Gate to Source Voltage (V)
CEM2281
3
2
1
0
0
5
10
15
20
25
10
2
10
1
RDS(ON)Limit
10ms
100ms
1s
10
0
10
-1
10
-2
DC
6
TA=25 C
TJ=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
10
Qg, Total Gate Charge (nC)
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
10
0.2
-1
0.1
0.05
10
PDM
0.02
0.01
-2
t1
Single Pulse
10
-3
10
-4
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
1
10
2
2