CEF02N6

CEF02N6
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Sep. 2002
FEATURES
D
600V , 1.5A , RDS(ON)=5 Ω @VGS=10V.
Super high dense cell design for extremely low RDS(ON).
6
High power and current handling capability.
Lead free product is acquired.
TO-220F full-pak for through hole
G
G
D
S
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Symbol
Limit
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
± 30
V
ID
1.5
A
-Pulsed
IDM
4.5
A
Drain-Source Diode Forward Current
IS
4.5
A
Maximum Power Dissipation @Tc=25 C
Derate above 25 C
PD
29
0.23
W
W/ C
Parameter
Drain Current-Continuous
Operating and Storage Temperautre Range
TJ, TSTG
-65 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
RθJC
4.3
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
65
C/W
6-117
CEF02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Condition
Symbol
Min Typ Max Unit
a
DRAIN-SOURCE AVALANCHE RATING
6
Single Pulse Drain-Source
Avalanche Energy
EAS
Maximum Drain-Source
Avalanche Current
IAS
VDD =50V, L=60mH
RG=9.1Ω
125
mJ
2
A
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V,ID = 250µA
Zero Gate Voltage Drain Current
IDSS
VDS = 600V, VGS = 0V
Gate-Body Leakage
IGSS
VGS = ±30V, VDS = 0V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
Drain-Source On-State Resistance
RDS(ON)
VGS =10V, ID = 1A
On-State Drain Current
ID(ON)
gFS
VGS = 10V, VDS = 10V
VDS = 50V, ID = 1A
1.2
tD(ON)
VDD = 300V,
ID = 2A,
VGS = 10V
RGEN=18Ω
18
35
ns
18
35
ns
50
90
ns
600
V
25
µA
±100 nA
ON CHARACTERISTICS a
Forward Transconductance
2
3.8
4
V
5.0
Ω
2
A
S
b
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tr
tD(OFF)
Fall Time
tf
16
40
ns
Total Gate Charge
Qg
20
25
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS =480V, ID = 2A,
VGS =10V
6-118
2
nC
12
nC
CEF02N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Min Typ Max Unit
Condition
Symbol
DYNAMIC CHARACTERISTICS b
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VDS =25V, VGS = 0V
f =1.0MHZ
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
250
PF
50
PF
30
PF
a
VGS = 0V, Is =1.5A
VSD
1.5
Notes
a.Pulse Test:Pulse Width＜ 300μs, Duty Cycle ＜ 2%.
b.Guaranteed by design, not subject to production testing.
3.0
VGS=10,9,8,7V
ID, Drain Current (A)
ID, Drain Current(A)
2.5
2.0
1.5
VGS=6V
1.0
VGS=5V
0.5
150 C
1
-55 C
0.1
0
0
2
4
6
8
10
12
1.VDS=40V
2.Pulse Test
25 C
2
4
6
8
10
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
6-119
V
6
CEF02N6
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
600
C, Capacitance (pF)
500
6
400
Ciss
300
200
Coss
100
Crss
0
0
5
10
15
20
25
2.2
ID=1A
VGS=10V
1.9
1.6
1.3
1.0
0.7
0.4
-100
VDS=VGS
ID=250μA
1.10
1.0
0.90
0.80
0.70
25
50
75 100 125 150
BVDSS, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.30
0
150
200
1.15
ID=250μA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
20
10
4
VDS=50V
Is, Source-drain current (A)
gFS, Transconductance (S)
100
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
0.60
-50 -25
50
TJ, Junction Temperature( C)
VDS, Drain-to Source Voltage (V)
1.20
0
-50
3
2
1
VGS=0V
1
0.1
0
0
1
2
3
4
0.4
IDS, Drain-Source Current (A)
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
6-120
Figure 8. Body Diode Forward Voltage
Variation with Source Current
CEF02N6
10
VDS=480V
ID=2A
1m
ID, Drain Current (A)
12
9
3
0
0
6
12
S
(O
N
10
0m
s
s
s
0.1
0.01
24
18
RD
m
C
6
1
i
)L
10
t
mi
D
VGS, Gate to Source Voltage (V)
15
Tc=25 C
Tj=150C
Single Pulse
1
6
Qg, Total Gate Charge (nC)
500 1000
100
10
VDS, Drain-Source Voltage (V)
Figure 9. Gate Charge
Figure 10. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
td(off)
tf
90%
90%
VOUT
VOUT
VGS
RGEN
toff
tr
td(on)
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 12. Switching Waveforms
Figure 11. Switching Test Circuit
0.2
r(t),Normalized Effective
Transient Thermal Impedance
2
1
D=0.5
0.1
PDM
0.1
0.05
t1
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
0.02
0.01
0.01
0.01
0.1
Single Pulse
1
10
100
1000
Square Wave Pulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance Curve
6-121
10000