CED6031L/CEU6031L March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 D 30V , 55A , RDS(ON)=11m Ω @VGS=10V. RDS(ON)=15mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. G D G S CEU SERIES TO-252AA(D-PAK) G D S CED SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ĆȀ20 V Drain Current-Continuous @TJ=125 C -Pulsed ID 55 A IDM 140 A Drain-Source Diode Forward Current IS 55 A Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 50 0.3 W W/ C TJ, TSTG -55 to 175 C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case RįJC 3 C/W Thermal Resistance, Junction-to-Ambient RįJA 50 C/W 6-32 CED6031L/CEU6031L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Symbol Condition Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V Gate-Body Leakage IGSS VGS = Ć16V, VDS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA Drain-Source On-State Resistance RDS(ON) Min Typ Max Unit OFF CHARACTERISTICS 30 V 1 µA Ć100 nA ON CHARACTERISTICS a ID(ON) gFS On-State Drain Current Forward Transconductance 1.6 3 V VGS = 10V, ID = 5A 8.5 11 mΩ VGS = 4.5V, ID = 5A 12 15 mΩ VDS = 10V, VGS = 10V VDS = 10V, ID = 26A 1 A 55 32 S 1800 PF 700 PF 200 PF b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS =15V, VGS = 0V f = 1.0MHZ b SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time tD(ON) tr tD(OFF) VDD = 15V, ID = 55A, VGS = 10V, VGEN = 24Ω 10 16 ns 190 250 ns 55 90 ns Fall time tf 130 200 ns Total Gate Charge Qg 27 33 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =24V, ID = 48A, VGS =5V 6-33 6 nC 14 nC 6 CED6031L/CEU6031L ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Condition Min Typ Max Unit VGS = 0V, Is = 26A 0.93 1.3 Symbol DRAIN-SOURCE DIODE CHARACTERISTICS a Diode Forward Voltage Notes a.Pulse Test:Pulse Width ś300ijs, Duty Cycle ś 2%. b.Guaranteed by design, not subject to production testing. 25 50 25 C VGS=10,8,6,5,4V 40 ID, Drain Current (A) ID, Drain Current (A) 20 15 10 VGS=3v 5 0 0 0.5 1.0 1.5 2.0 2.5 30 20 Tj=125 C 10 -55 C 00 3.0 1 2 3 4 5 6 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 3000 RDS(ON), Normalized Drain-Source, On-Resistance 2.2 2500 C, Capacitance (pF) 6 VSD 2000 Ciss 1500 1000 Coss 500 00 Crss 5 10 15 20 25 VGS=10V 1.8 Tj=125 C 1.4 25 C 1.0 0.2 0 30 -55 C 0.6 0 5 10 15 20 ID, Drain Current(A) VDS, Drain-to Source Voltage (V) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 6-34 V 1.6 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage CED6031L/CEU6031L VDS=VGS ID=250ijA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 1.15 ID=250ijA 1.10 1.05 1.00 0.95 0.90 25 50 75 100 125 150 Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 50 50 40 Is, Source-drain current (A) gFS, Transconductance (S) 0 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) 30 20 10 VDS=10V 10 1 0.1 0 0 5 10 15 20 0.4 IDS, Drain-Source Current (A) 300 200 100 ID, Drain Current (A) VDS=24V ID=48A 6 4 2 0 0 6 12 18 24 0.8 1.0 1.2 1.4 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 8 0.6 VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current VGS, Gate to Source Voltage (V) 6 0.85 -50 -25 R Qg, Total Gate Charge (nC) ( Lim it 10 1m 1 0ij s s 10 ms 10 0m s DC 10 0.5 30 36 42 48 DS ) ON VGS=10V Single Pulse Tc=25 C 0.1 1 10 30 60 VDS, Drain-Source Voltage (V) Figure 10. Maximum Safe Operating Area Figure 9. Gate Charge 6-35 CED6031L/CEU6031L VDD t on V IN D VOUT VOUT 6 td(off) tf 90% 90% VGS RGEN toff tr td(on) RL 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 12. Switching Waveforms Figure 11. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 PDM 0.1 0.05 t1 t2 0.02 0.01 1. RįJA (t)=r (t) * RįJA 2. RįJA=See Datasheet 3. TJM-TA = PDM* RįJA (t) 4. Duty Cycle, D=t1/t2 SINGLE PULSE 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 6-36 10