CEP14P20/CEB14P20 CEF14P20 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP14P20 -200V 0.36Ω -13.5A -10V CEB14P20 -200V 0.36Ω -13.5A -10V CEF14P20 -200V 0.36Ω -13.5A d -10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS -200 Gate-Source Voltage VGS ±30 Drain Current-Continuous @ TC = 25 C Drain Current-Pulsed -13.5 ID @ TC = 100 C IDM a Maximum Power Dissipation @ TC = 25 C e PD - Derate above 25 C TO-220F Units V V -13.5 d A A -8.5 -8.5 d -54 -54 139 42 W 0.33 W/ C 1.11 d A Single Pulsed Avalanche Energy h EAS 273 mJ Single Pulsed Avalanche Current h IAS 13.5 A TJ,Tstg -55 to 150 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 0.9 3 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2012.Mar http://www.cetsemi.com Electrical Characteristics Parameter CEP14P20/CEB14P20 CEF14P20 Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250µA -200 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = -200V, VGS = 0V -1 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA -4 V 0.36 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = -250µA RDS(on) VGS = -10V, ID = -6.8A Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -25V, VGS = 0V, f = 1.0 MHz -2 0.30 1620 pF 240 pF 50 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = -100V, ID = -13.5A, VGS = -10V, RGEN = 25Ω 28 74 ns ns tf 120 520 240 ns Turn-Off Fall Time Total Gate Charge Qg 52 68 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = -160V, ID = -13.5A, VGS = -10V 260 56 148 ns 9 nC 25 nC Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = -13.5A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 7.4A . g.Full package VSD test condition IS = 7.4A . h.L = 3mH, IAS =13.5A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C. 2 -13.5 A -1.5 V 4 CEP14P20/CEB14P20 CEF14P20 7.5 50 25 C -VGS=5V 4.5 3.0 1.5 -VGS=4V 0 0.0 1 2 3 0 2 4 6 8 10 12 Figure 1. Output Characteristics Figure 2. Transfer Characteristics Ciss 600 Coss 300 Crss 0 5 10 15 20 25 3.0 2.5 ID=6.8A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=-250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125 C -VGS, Gate-to-Source Voltage (V) 900 1.2 10 5 1200 1.3 20 -55 C 1500 0 30 0 -IS, Source-drain current (A) C, Capacitance (pF) 4 40 -VDS, Drain-to-Source Voltage (V) 1800 VTH, Normalized Gate-Source Threshold Voltage -ID, Drain Current (A) 6.0 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) -ID, Drain Current (A) -VGS=10,8,7,6,V -25 0 25 50 75 100 125 150 VGS=0V 10 2 10 1 10 0 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=-160V ID=-13.5A 8 -ID, Drain Current (A) -VGS, Gate to Source Voltage (V) CEP14P20/CEB14P20 CEF14P20 6 4 2 0 0 10 20 30 40 50 RDS(ON)Limit 100us 10 1ms 1 10ms DC 10 10 60 2 0 TC=25 C TJ=175 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 PDM 0.1 t1 0.05 0.02 0.01 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -4 t2 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 1 10 2 3