CEP655N/CEB655N CEI655N/CEF655N N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP655N 150V 0.153Ω 15A 10V CEB655N 150V 0.153Ω 15A 10V CEI655N 150V 0.153Ω 15A CEF655N 150V 0.153Ω 15A 10V d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S G D S CEI SERIES TO-262(I2-PAK) G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±25 Drain Current-Continuous Drain Current-Pulsed ID a IDM Maximum Power Dissipation @ TC = 25 C Units V V 15 d 60 60 d 83 39 W 0.26 W/ C 15 e PD - Derate above 25 C TO-220F 0.56 A A TJ,Tstg -55 to 175 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 1.8 3.8 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2005.June http://www.cetsemi.com CEP655N/CEB655N CEI655N/CEF655N Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 150 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 150V, VGS = 0V 1 µA IGSSF VGS = 25V, VDS = 0V 100 nA IGSSR VGS = -25V, VDS = 0V -100 nA 4 V 153 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 8.2A 118 gFS VDS = 40V, ID = 8.2A 5 S 750 pF 175 pF 70 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 75V, ID = 15A, VGS = 10V, RGEN = 25Ω 17 35 ns 48 100 ns 40 80 ns Turn-Off Fall Time tf 46 90 ns Total Gate Charge Qg 26 34 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 120V, ID = 15A, VGS = 10V 6 nC 12.5 nC Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 15A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e .Pulse width limited by safe operating area . f .Full package IS(max) = 10A . g.Full package VSD test condition IS = 10A . 2 15 A 1.5 V 4 CEP655N/CEB655N CEI655N/CEF655N 50 30 25 C 24 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,6,4V 18 12 6 0 0 1 2 3 4 1 3 4 5 6 7 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 2 VGS, Gate-to-Source Voltage (V) Ciss 800 600 400 Coss Crss 0 0 5 10 15 20 25 3.0 2.5 ID=8.2A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C TJ=125 C 10 VDS, Drain-to-Source Voltage (V) 200 VTH, Normalized Gate-Source Threshold Voltage 20 0 1000 1.2 30 5 1200 1.3 40 VGS=0V 10 10 10 -25 0 25 50 75 100 125 1 0 -1 0.4 150 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 2 RDS(ON)Limit VDS=120V ID=15A 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP655N/CEB655N CEI655N/CEF655N 6 4 2 0 10 6 12 18 24 30 1 1ms 10ms DC 10 10 0 4 100µs 0 TC=25 C TJ=175 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 -1 0.1 PDM 0.05 0.02 0.01 Single Pulse 10 t1 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3