CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF634 250V 0.45Ω 8.1A 10V CEBF634 250V 0.45Ω 8.1A 10V CEIF634 250V 0.45Ω 8.1A CEFF634 250V 0.45Ω 8.1A 10V d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S CEI SERIES TO-262(I2-PAK) G D S G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263/262 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C ID @ TC = 100 C Drain Current-Pulsed a IDM e Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Operating and Store Temperature Range TJ,Tstg TO-220F 250 Units V ±20 V 8.1 8.1 d A 5.1 32 5.1 d 32 d A 74 38 W 0.3 W/ C 0.59 A C -55 to 150 Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 1.7 3.3 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 2. 2010.June http://www.cetsemi.com Details are subject to change without notice . 1 CEPF634/CEBF634 CEIF634/CEFF634 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 250 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 250V, VGS = 0V 25 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 0.45 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 4.5A gFS VDS = 50V, ID = 5.1A 2 4.4 S 925 pF 95 pF 20 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 125V, ID = 5.6A, VGS = 10V, RGEN = 12Ω 16 32 ns 3.5 7 ns 38 76 ns Turn-Off Fall Time tf 4 8 ns Total Gate Charge Qg 18 23 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 200V, ID = 5.6A, VGS = 10V 3 nC 5 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS f b VSD VGS = 0V, IS = 8.1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e .Pulse width limited by safe operating area . f .Full package IS(max) = 6A . g .UIS condition Vdd=25V L=2mH Rg=25ohm Ias=8.1A . 2 0.9 8.1 A 1.5 V CEPF634/CEBF634 CEIF634/CEFF634 VGS=10,9,8,7V 10 ID, Drain Current (A) ID, Drain Current (A) 12 8 VGS=6V 6 4 VGS=5V 2 0 0 1 2 3 4 5 6 10 -1 RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 600 400 200 Coss Crss 10 20 30 40 50 3.0 2.5 1.VDS=40V 2.Pulse Test 25 C 2 4 6 8 10 ID=5.1A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C Figure 2. Transfer Characteristics Ciss 0 TJ=150 C Figure 1. Output Characteristics IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 0 VGS, Gate-to-Source Voltage (V) 800 1.2 10 VDS, Drain-to-Source Voltage (V) 1000 1.3 1 VGS=4V 1200 0 10 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=200V ID=5.6A RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEPF634/CEBF634 CEIF634/CEFF634 6 4 2 0 0 3 6 9 12 15 18 10 1ms 10ms DC 10 10 21 100ms 1 0 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 0.1 -1 0.05 0.02 10 10 PDM 0.01 Single Pulse -2 t1 -3 10 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -5 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3