CEF12N5S

CEF12N5S
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEF12N5S
VDSS
RDS(ON)
ID
@VGS
500V
0.54Ω
12Ad
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
G
D
S
D
G
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Tc = 25 C unless otherwise noted
Symbol
Limit
Units
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±30
V
ID
12
48d
A
50
W
Drain Current-Continuous
Drain Current-Pulsed
IDM
a
Maximum Power Dissipation @ TC = 25 C
d
e
PD
- Derate above 25 C
Operating and Store Temperature Range
A
0.4
W/ C
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
2.5
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
65
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2008.Dec.
http://www.cetsemi.com
Electrical Characteristics
Parameter
CEF12N5S
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
500
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS =500V, VGS = 0V
1
µA
IGSSF
VGS = 30V, VDS = 0V
100
nA
IGSSR
VGS = -30V, VDS = 0V
-100
nA
4
V
0.54
Ω
Off Characteristics
V
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
VGS = VDS, ID = 250µA
RDS(on)
VGS = 10V, ID = 6A
2
0.45
Dynamic Characteristics c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
1745
pF
205
pF
20
pF
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 250V, ID = 12A,
VGS = 10V, RGEN = 25Ω
31.6
63.2
ns
25.6
51.2
ns
146.3
292.6
ns
Turn-Off Fall Time
tf
32
64
ns
Total Gate Charge
Qg
44.1
58.7
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = 400V,ID = 12A,
VGS = 10V
7.3
nC
17.3
nC
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
ISf
b
VSDg
VGS = 0V, IS = 12A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) =6A .
g.Full package VSD test condition IS =6A .
h.L = 15mH, IAS = 8.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
2
12
A
1.4
V
CEF12N5S
14
VGS=10,9,8,7,6,5V
10
12
ID, Drain Current (A)
ID, Drain Current (A)
12
8
6
4
VGS=4V
2
0
0
5
10
15
20
25
30
TJ=125C
0
-55 C
1.5
3.0
4.5
6.0
7.5
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
1200
800
Coss
400
Crss
0
5
10
15
20
25
3.0
2.5
ID=12A
VGS=10V
2.0
1.5
1.0
0.5
0.0
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
IS, Source-drain current (A)
C, Capacitance (pF)
VTH, Normalized
Gate-Source Threshold Voltage
25 C
VGS, Gate-to-Source Voltage (V)
Ciss
1.1
1.0
0.9
0.8
0.7
0.6
-50
4
0
1600
1.2
6
VDS, Drain-to-Source Voltage (V)
2000
1.3
8
2
2400
0
10
-25
0
25
50
75
100
125
10
1
10
0
10
-1
VGS=0V
0.4
150
0.6
0.8
1.0
1.2
1.4
1.6
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=400V
ID=12A
10
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CEF12N5S
6
4
2
0
0
15
30
45
RDS(ON)Limit
100ms
10
1
1ms
10ms
DC
10
10
60
2
0
TC=25 C
TJ=150 C
Single Pulse
-1
10
0
10
1
10
2
10
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
V IN
RL
D
VGS
RGEN
toff
tr
td(on)
td(off)
tf
90%
90%
VOUT
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
0.02
0.01
Single Pulse
10
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-2
10
-5
t2
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
10
0
10
1
3