CEP9055/CEB9055 CEF9055 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS(ON) ID @VGS CEP9055 Type 55V 10.5mΩ 100A 10V CEB9055 55V 10.5mΩ 100A CEF9055 55V 10.5mΩ 100A 10V e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 g & TO-263 package & TO-220F full-pak for through hole. G D G S CEB SERIES TO-263(DD-PAK) G D S G D CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 TO-220F Drain-Source Voltage VDS 55 Gate-Source Voltage VGS ±20 Drain Current-Continuous Drain Current-Pulsed ID a IDM Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C V V 100 e 300 300 e 200 75 W 100 f Units A A 1.3 0.5 W/ C Single Pulsed Avalanche Energy d EAS 325 325 mJ Single Pulsed Avalanche Current d IAS 50 50 A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Symbol Limit Units Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 0.75 2 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 1. 2005.September http://www.cetsemi.com 1 CEP9055/CEB9055 CEF9055 Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 55 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 55V, VGS = 0V 10 µA IGSSF VGS = 20V, VDS = 0V 100 nA IGSSR VGS = -20V, VDS = 0V -100 nA 4 V 10.5 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forwand Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 62A 8.8 gFS VDS = 25V, ID = 62A 28 S 2700 pF 800 pF 115 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) 40 VDD = 28V, ID = 62A, VGS = 10V, RGEN = 4.5Ω 80 ns 20 45 ns 65 120 ns Turn-On Fall Time tf 15 35 ns Total Gate Charge Qg 60 80 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 44V, ID = 62A, VGS = 10V 15 nC 22 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current IS Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 62A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 260µH, IAS = 50A, VDD = 30V, RG = 25Ω, Starting TJ = 25 C e.Limited only by maximum temperature allowed . f .Pulse width limited by safe operating area . g.The mounting torque (4-40/M3 screw) in TO-220 package is recommended within 3-4Kgf-cm (MAX. 4Kgf-cm) 2 62 A 1.3 V 4 CEP9055/CEB9055 CEF9055 120 120 100 80 ID, Drain Current (A) ID, Drain Current (A) VGS=10,8,7V VGS=6V 60 40 VGS=5V 20 0.5 1.0 1.5 2.5 1 2 3 4 5 6 7 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Ciss 2400 1800 1200 Coss Crss 0 0 5 10 15 20 25 2.2 1.9 ID=62A VGS=10V 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature IS, Source-drain current (A) VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C VDS, Drain-to-Source Voltage (V) RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) C, Capacitance (pF) 25 C 3.0 600 VTH, Normalized Gate-Source Threshold Voltage 40 TJ=125 C 2.0 3000 1.2 60 0 3600 1.3 80 20 VGS=4V 0 0.0 100 VGS=0V 10 10 10 -25 0 25 50 75 100 125 150 2 1 0 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=44V ID=62A 6 4 2 0 RDS(ON)Limit 10 10 10 0 10 3 4 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP9055/CEB9055 CEF9055 20 30 40 50 60 2 100µs 1ms 10ms DC 1 TC=25 C TJ=150 C Single Pulse 0 10 -1 10 0 10 1 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on RL V IN D td(off) tf 90% 90% VOUT VOUT VGS RGEN toff tr td(on) 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 0.01 t1 t2 1. RθJA (t)=r (t) * RθJA 2. RθJA=See Datasheet 3. TJM-TA = P* RθJA (t) 4. Duty Cycle, D=t1/t2 Single Pulse 10 -2 10 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 2