CEP02N7G/CEB02N7G CEF02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS(ON) ID @VGS CEP02N7G Type 700V 6.75Ω 2A 10V CEB02N7G 700V 6.75Ω 2A 10V CEF02N7G 700V 6.75Ω 2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S S CEF SERIES TO-220F Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C ID @ TC = 100 C Drain Current-Pulsed a IDM e Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h Operating and Store Temperature Range TO-220F 700 V ±30 V 2 2 1.3 1.3 8 Units A d d 8d A A 60 33 W 0.48 0.26 W/ C EAS IAS 11.25 1.5 mJ A TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 2.1 3.9 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 3. 2011.Jan http://www.cetsemi.com Details are subject to change without notice . 1 Electrical Characteristics Parameter CEP02N7G/CEB02N7G CEF02N7G Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 700 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 700V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 6.75 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 1A Forward Transconductance gFS VDS = 50V, ID = 1A Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Static Drain-Source On-Resistance 2 5.4 Dynamic Characteristics c VDS = 25V, VGS = 0V, f = 1.0 MHz 1.5 S 315 pF 55 pF 20 pF 14 ns 12.5 ns 23 ns Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 2A, VGS = 10V, RGEN = 18Ω Turn-Off Fall Time tf 10 ns Total Gate Charge Qg 9 nC Gate-Source Charge Qgs 1.5 nC Gate-Drain Charge Qgd 5 nC VDS = 480V, ID = 2A, VGS = 10V Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 1A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 1.5A . g.Full package VSD test condition IS = 1.5A . h.L =10mH, IAS =1.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C 2 2 A 1.5 V CEP02N7G/CEB02N7G CEF02N7G 3.0 VGS=10,9,8,7V 1.5 1.2 ID, Drain Current (A) ID, Drain Current (A) 1.8 VGS=6V 0.9 0.6 VGS=5V 0.3 0 0 5 10 15 20 25 TJ=125C 0 -55 C 1.5 3.0 4.5 6.0 7.5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 300 200 Coss 100 Crss 0 5 10 15 20 25 3.0 2.5 ID= 2A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C 0.5 VGS, Gate-to-Source Voltage (V) Ciss 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.0 VDS, Drain-to-Source Voltage (V) 400 1.2 1.5 30 500 1.3 2.0 0 600 0 2.5 -25 0 25 50 75 100 125 10 1 10 0 10 -1 VGS=0V 0.4 150 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=2A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP02N7G/CEB02N7G CEF02N7G 6 4 2 0 0 3 6 9 10 0 10 -1 10 12 1 RDS(ON)Limit 100ms 1ms 10ms DC TC=25 C TJ=175 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 0.02 0.01 10 Single Pulse -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3