CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS CEP02N6G 600V RDS(ON) 5Ω 2.2A ID @VGS 10V CEB02N6G 600V 5Ω 2.2A 10V CEF02N6G 600V 5Ω 2.2A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID Drain Current-Pulsed a IDM e Maximum Power Dissipation @ TC = 25 C PD - Derate above 25 C Single Pulsed Avalanche Energy S CEF SERIES TO-220F g Single Pulsed Avalanche Current Operating and Store Temperature Range g TO-220F 600 V ±30 2.2 Units V A 1.4 2.2 1.4d 8.8 8.8 d A 60 33 W 0.48 0.26 W/ C d A EAS 11.25 mJ IAS 1.5 A TJ,Tstg -55 to 150 C Thermal Characteristics Parameter Symbol Limit Units Thermal Resistance, Junction-to-Case RθJC 2.1 3.8 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W Rev 5. 2011.Feb http://www.cetsemi.com Details are subject to change without notice . 1 Electrical Characteristics Parameter CEP02N6G/CEB02N6G CEF02N6G Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 600 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 600V, VGS = 0V 25 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 5 Ω Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) VGS = VDS, ID = 250µA RDS(on) VGS = 10V, ID = 1A 2 3.8 Dynamic Characteristics c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz 290 pF 70 pF 15 pF Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 300V, ID = 1A, VGS = 10V, RGEN = 18Ω 18 36 ns 10 20 56 ns 28 ns Turn-Off Fall Time tf 10 20 ns Total Gate Charge Qg 6.8 9 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 480V, ID = 1A, VGS = 10V 1.4 nC 3.1 nC Drain-Source Diode Characteristics and Maximun Ratings IS f Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 1A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 1.5A . g.L = 10mH, IAS =1.5A, VDD = 50V, RG = 25W, Starting TJ = 25 C 2 2 A 1.5 V CEP02N6G/CEB02N6G CEF02N6G 3.0 VGS=10,9,8,7V 2.5 2.0 ID, Drain Current (A) ID, Drain Current (A) 3.0 VGS=6V 1.5 1.0 VGS=5V 0.5 0 0 5 10 15 20 25 -55 C 0 2.5 5 7.5 10 12.5 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 300 Coss 150 Crss 0 5 10 15 20 25 3.0 2.5 ID=1A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 25 C 0.5 VGS, Gate-to-Source Voltage (V) 450 1.1 1.0 0.9 0.8 0.7 0.6 -50 1.0 VDS, Drain-to-Source Voltage (V) 600 1.2 1.5 0 750 1.3 2.0 30 900 0 TJ=125C 2.5 -25 0 25 50 75 100 125 10 1 10 0 10 -1 VGS=0V 0.4 150 0.6 0.8 1.0 1.2 1.4 1.6 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 VDS=480V ID=1A 10 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP02N6G/CEB02N6G CEF02N6G 6 4 2 0 0 2 4 6 RDS(ON)Limit 100ms 1ms 10 10ms 0 DC 10 10 8 1 -1 TC=25 C TJ=175 C Single Pulse -2 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 0.1 10 -1 PDM 0.05 t1 0.02 0.01 10 Single Pulse -2 10 -5 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 0 10 1 3