CED6042/CEU6042

CED6042/CEU6042
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 90A , RDS(ON) = 5mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
ABSOLUTE MAXIMUM RATINGS
Parameter
G
D
S
CED SERIES
TO-251(I-PAK)
Tc = 25 C unless otherwise noted
Symbol
Limit
60
Units
V
VGS
±20
V
ID
90
A
IDM
360
A
74
W
Drain-Source Voltage
VDS
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ TC = 25 C
PD
- Derate above 25 C
EAS
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current
S
d
Operating and Store Temperature Range
0.6
W/ C
400
mJ
IAS
40
A
TJ,Tstg
-55 to 150
C
Thermal Characteristics
Symbol
Limit
Units
Thermal Resistance, Junction-to-Case
Parameter
RθJC
1.7
C/W
Thermal Resistance, Junction-to-Ambient
RθJA
50
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2013.Mar
http://www.cetsemi.com
CED6042/CEU6042
Electrical Characteristics
Parameter
Tc = 25 C unless otherwise noted
Symbol
Test Condition
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA
60
Zero Gate Voltage Drain Current
IDSS
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
Typ
Max
Units
VDS = 60V, VGS = 0V
1
µA
IGSSF
VGS = 20V, VDS = 0V
100
nA
IGSSR
VGS = -20V, VDS = 0V
-100
nA
4
V
5
mΩ
Off Characteristics
V
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
VGS(th)
VGS = VDS, ID = 250µA
2
RDS(on)
VGS = 10V, ID = 30A
4.1
Rg
f=1MHz,open Drain
2
Ω
6480
pF
450
pF
315
pF
36
ns
33
ns
71
ns
c
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Switching Characteristics c
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
VDD = 30V, ID = 20A,
VGS = 10V, RGEN = 3.6Ω
Turn-Off Fall Time
tf
38
ns
Total Gate Charge
Qg
123
nC
Gate-Source Charge
Qgs
25
nC
Gate-Drain Charge
Qgd
31
nC
VDS = 48V, ID = 20A,
VGS = 10V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS
Drain-Source Diode Forward Voltage b
VSD
VGS = 0V, IS = 30A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS =40A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
2
60
A
1.2
V
CED6042/CE6042
200
80
VGS=6V
60
40
20
0
2
4
6
TJ=125 C
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Ciss
2400
Coss
1200
Crss
0
5
10
15
20
25
2.2
1.9
ID=35A
VGS=10V
1.6
1.3
1.0
0.7
0.4
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
VDS=VGS
ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50
0
-55 C
VDS, Drain-to-Source Voltage (V)
3600
1.2
50
10
IS, Source-drain current (A)
C, Capacitance (pF)
8
4800
1.3
100
0
6000
0
150
VGS=5V
7200
VTH, Normalized
Gate-Source Threshold Voltage
ID, Drain Current (A)
100
0
25 C
VGS=10,9,8,7V
RDS(ON), Normalized
RDS(ON), On-Resistance(Ohms)
ID, Drain Current (A)
120
-25
0
25
50
75
100
125
150
VGS=0V
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
10
VDS=48V
ID=20A
8
ID, Drain Current (A)
VGS, Gate to Source Voltage (V)
CED6042/CEU6042
6
4
2
0
0
31
62
93
124
10
3
10
2
10
1
10
0
10
-1
RDS(ON)Limit
100us
1ms
10ms
DC
TC=25 C
TJ=150 C
Single Pulse
10
-2
10
-1
10
0
10
1
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
t on
RL
V IN
D
tf
90%
90%
VOUT
VGS
RGEN
toff
td(off)
tr
td(on)
VOUT
10%
INVERTED
10%
G
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 10. Switching Waveforms
r(t),Normalized Effective
Transient Thermal Impedance
Figure 9. Switching Test Circuit
10
0
D=0.5
0.2
10
-1
PDM
0.1
t1
0.05
0.02
0.01
Single Pulse
10
-2
10
-5
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJC (t)
4. Duty Cycle, D=t1/t2
10
-4
10
-3
10
-2
10
-1
10
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
0
10
1
10
2