P410m 2.5-inch SAS NAND Flash SSD

P410m 2.5-Inch SAS NAND Flash SSD
Features
P410m 2.5-Inch SAS NAND Flash SSD
MTFDEAK100MAS-1S1AA, MTFDEAK200MAS-1S1AA,
MTFDEAK400MAS-1S1AA
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
• Reliability
– MTTF: 2 million device hours2
– Static and dynamic wear leveling
– Uncorrectable bit error rate (UBER): <1 sector
per 1016 bits read
• Capacity3 (unformatted): 100GB, 200GB, 400GB
• Endurance: Total bytes written (TBW)
– 100GB: 1.75PB
– 200GB: 3.50PB
– 400GB: 7.00PB
• Mechanical – 7.0mm height
– Supply voltage: 12V ±10%
– 2.5-inch drive: 100.5mm x 69.85mm x 7.0mm
• Field-upgradeable firmware
• Power consumption: <9W (TYP)
• Operating temperature
– Commercial (0°C to +70°C)4
Micron® 25nm MLC NAND Flash
RoHS-compliant package
SAS 6 Gb/s interface
Supported SAS speeds
– 3 Gb/s
– 6 Gb/s
– Auto-speed negotiation
Enterprise sector size support
– 512-byte
Hot-plug capable
SAS-2, rev 16 support
SAM-3-compliant
128-entry command queue depth
Security erase command set: fast and secure erase
100GB performance (steady state)1
– Sequential read (64KB transfer): 400 MB/s
– Sequential write (64KB transfer): 220 MB/s
– Random read (4KB transfer): 50,000 IOPS
– Random write (4KB transfer): 25,000 IOPS
– READ latency (4KB transfer): 0.7ms
– WRITE latency (4KB transfer): 1.5ms
200GB performance (steady state)1
– Sequential read (64KB transfer): 400 MB/s
– Sequential write (64KB transfer): 340 MB/s
– Random read (4KB transfer): 50,000 IOPS
– Random write (4KB transfer): 30,000 IOPS
– READ latency (4KB transfer): 0.7ms
– WRITE latency (4KB transfer): 1.5ms
400GB performance (steady state)1
– Sequential read (64KB transfer): 400 MB/s
– Sequential write (64KB transfer): 340 MB/s
– Random read (4KB transfer): 50,000 IOPS
– Random write (4KB transfer): 30,000 IOPS
– READ latency (4KB transfer): 0.7ms
– WRITE latency (4KB transfer): 1.5ms
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
Notes:
1. Typical I/O performance numbers as measured using Iometer with a queue depth of
32 and write cache disabled.
2. The product achieves a mean time to failure
(MTTF) based on population statistics not
relevant to individual units.
3. 1GB = 1 billion bytes; formatted capacity is
less.
4. Drive case temperature.
Warranty: Contact your Micron sales representative
for further information regarding the product,
including product warranties.
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
P410m 2.5-Inch SAS NAND Flash SSD
Features
Part Numbering Information
Micron’s P410m SSD is available in different configurations and densities. Visit www.micron.com for a list of valid
part numbers.
Figure 1: Part Number Chart
MT FD
E
AK 100 M AS - 1
S
1
AA
ES
Production Status
Micron Technology
Blank = Production
ES = Engineering sample
Product Family
FD = Flash drive
Operating Temperature Range
Drive Interface
Blank = Commercial (0°C to 70°C)
Drive Form Factor
Blank = Null
AA = Contact factory
AB = Contact factory
AC = Contact factory
E = SAS 6.0 Gb/s
Hardware Feature Set
AK = 2.5-inch (7.0mm)
Drive Density
100 = 100GB
200 = 200GB
400 = 400GB
BOM Revision
1 = 1st generation
NAND Flash Component
NAND Flash Type
S = 42Gb, MLC, x8 3.3V (25nm)
M = MLC
Sector Size
Product Family
1 = 512-byte
AS = P410m
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
General Description
General Description
Micron’s P410m solid state drive (SSD) uses a single-chip controller with a dual-port
SAS interface on the system side and n-channels of Micron NAND Flash internally.
Packaged in an HDD replacement enclosure, the SSD integrates easily in existing storage infrastructures.
The P410m is designed to support and manage the needs of highly available, high-performance platforms that utilize significant read/write mixed workloads. Optimized to
support enterprise needs previously supported solely by single-level cell (SLC) solutions, the P410m provides the endurance and data integrity required by these growing
environments.
Figure 2: Functional Block Diagram
NAND
SAS (0)
SSD
controller
NAND
NAND
SAS (1)
NAND
DRAM
buffer
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Logical Block Address Configuration
Logical Block Address Configuration
The drive is set to report the number of logical block addresses (LBA) that will ensure
sufficient storage space for the specified density. Standard LBA settings, based on the
IDEMA standard (LBA1-02), are shown below.
Table 1: Standard LBA Settings – 512-Byte Sector Size
Total LBA
Drive Size
User Available
Bytes
Max LBA
Decimal
Hexadecimal
Decimal
Hexadecimal
(Unformatted)
100GB
195,371,568
BA52230
195,371,567
BA5222F
100,030,242,816
200GB
390,721,968
1749F1B0
390,721,967
1749F1AF
200,049,647,616
400GB
781,422,768
2E9390B0
781,422,767
2E9390AF
400,088,457,216
Physical Configuration
Table 2: 2.5-Inch Dimensions
Value
Specification
Nom
Max
Unit
–
7.0
mm
Width
69.85
–
mm
Length
100.50
–
mm
Height
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Interface Connectors
Interface Connectors
The SAS signal segment interface cable has four conductors and three ground connections. As shown in Package Dimensions, the cable includes a 7-pin signal segment and a
15-pin power segment arranged in a single row with a 1.27mm (0.050in) pitch.
Table 3: SAS Signal Segment Pin Assignments
Signal Name
Type
Description
S1
GND
Second mate ground
S2
TX0+
Positive (Tx0 to target)
S3
TX0-
Negative Tx0 to target)
S4
GND
Second mate to ground
S5
RX0-
Negative (Rx0 to target)
S6
RX0+
Positive (Rx0 to target)
S7
GND
Second mate ground
Table 4: Back Side Signal Segment
Signal Name
Type
Description
S8
GND
Second mate ground
S9
TX1+
Positive (Tx1 to target)
S10
TX1-
Negative Tx1 to target)
S11
GND
Second mate to ground
S12
RX1-
Negative (Rx1 to target)
S13
RX1+
Negative (Rx1 to target)
S14
GND
Second mate ground
Table 5: 2.5-Inch SAS Power Segment Pin Assignments
Pin#
Signal Name
P1
V33
No connect
P2
V33
No connect
P3
V33
No connect
P4
GND
Ground
P5
GND
Ground
P6
GND
No connect
P7
V5
No connect
P8
V5
No connect
P9
V5
No connect
P10
GND
Ground
P11
DAS
READY LED
P12
GND
Ground
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
Description
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Interface Connectors
Table 5: 2.5-Inch SAS Power Segment Pin Assignments (Continued)
Pin#
Signal Name
P13
V12
Description
12V power
P14
V12
12V power
P15
V12
12V power
Figure 3: SSD Interface Connections
Secondary
signal segment
Power
segment
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
Primary
signal segment
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Commands
Commands
Table 6: Supported ATA Command Set
Description
Command Code
Standard
ATA pass through (12)
A1
SAT-2
ATA pass through (6)
85
Format unit
04
SBC-3
Inquiry
12
SPC-3
Log select
4C
SPC-4
Log sense
4D
Mode select (6)
15
Mode select (12)
55
Mode sense (6)
1A
Mode sense (10)
5A
Persistent reserve in
5E
Persistent reserve out
5F
Pre-fetch (10)
34
Read (6)
08
Read (10)
28
Read (16)
88
Read (32)
7F/0009
SPC-3
SPC-4
SBC-3
Read buffer
3C
SPC-3
Read capacity (10)
25
SBC-3
Read capacity (16)
9E/10
Read defect data (10)
37
Read defect data (12)
B7
Read long (10)
3E
Read long (16)
9E
Reassign blocks
07
Receive diagnostic results
1C
SPC-3
Release (6)
17
Obsolete (SPC-2)
Release (10)
57
Report identifying information
A3/05
Report LUNs
SPC-4
A0
Report supported operation codes
A3/0C
Report supported task management functions
A3/0D
Request sense
03
SPC-3
Reserve (6)
16
Obsolete (SBC-2)
Reserve (10)
56
Security protocol in
A2
Security protocol out
B5
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
7
SPC-4/SAT-3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Commands
Table 6: Supported ATA Command Set (Continued)
Description
Command Code
Standard
Seek (10)
2B
Obsolete (SBC-2)
Send diagnostic
1D
SPC-3
A4/06
SPC-4
Start stop unit
1B
SBC-3
Synchornize cache (10)
35
Synchronize cache (16)
91
Test unit ready
00
SPC-3
Unmap
42
SBC-3
Verify (10)
2F
Verify (16)
8F
Verify (32)
7F/000A
Set identifying information
Write (6)
0A
Write (10)
2A
Write (16)
8A
Write (32)
7F/000B
Write and verify (10)
2E
Write and verify (16)
8E
Write and verify (32)
7F/000C
Write buffer
3B
SPC-3
Write long (10)
3F
SBC-3
Write long (16)
9F
Write same (10)
41
Write same (16)
93
Write same (32)
7F/000D
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Diagnostic, Log, and VPD Pages
Diagnostic, Log, and VPD Pages
Table 7: Supported Diagnostic Pages
Diagnostic Page Code
Diagnostic Page Name
Standard
00h
Supported Diagnostic Pages Diagnostic
Page
SPC-4
3Fh
Protocol-Specific Diagnostic Page for
SAS SSP
SPC-4/SAS-2
A0h
Fault LED Diagnostic Page
–
Table 8: Supported Log Pages
Diagnostic Page
Code
Diagnostic Page Name
Standard
00h
Supported Log Pages Page
SPC-4
02h
Write Error Counter Log Page
SPC-4
03h
Read Error Counter Log Page
SPC-4
05h
Verify Error Counter Log Page
SPC-4
06h
Non-Medium Error Log Page
SPC-4
0Dh
Temperature Log Page
SPC-4
0Eh
Start-Stop Cycle Counter Log Page
SPC-4
0Fh
Application Client Log Page
SPC-4
10h
Self Test Results Log Page
SPC-4
15h
Background Scan Result Log Page
SPC-4
18h
Protocol-Specific Port Log Page
SPC-4
19h
General Statistics and Performance Log Page
SPC-4
2Fh
Informational Exceptions Log Page
SPC-4 /SAT-2
30h
Device SMART Read Data Log Page
–
31h
SATA IDENTIFY DEVICE Data Log Page
–
32h
SMART Read Error Log Page
–
33h
Impacted LBA List Log Page
–
34h
Device SMART Read Attribute Thresholds Log Page
–
35h
SATA Error Statistics Log Page
–
36h
SAS Error Statistics Log Page
–
37h
ELX-Bridge Error/Statistics Log Page
–
Diagnostic Page
Code
Diagnostic Page Name
Standard
00h
Supported VPD Pages VPD Page
SPC-4
80h
Unit Serial Number VPD Page
SPC-4
Table 9: Supported VPD Pages
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Diagnostic, Log, and VPD Pages
Table 9: Supported VPD Pages (Continued)
Diagnostic Page
Code
Diagnostic Page Name
Standard
83h
Device Identification VPD Page (for SAS Target)
SPC-4 /SAS-2
86h
Extended Inquiry Data VPD Page
SPC-3 /SPC-4
87h
Mode Page Policy VPD Page
SPC-4
88h
SCSI Ports VPD Page
SPC-4
89h
ATA Information VPD Page
SPC-4 /SAT-2
8Ah
Power Condition VPD Page
SPC-4
90h
Protocol-Specific Logical Unit Information VPD Page
SAS-2
B0h
Block Limits VPD Page
SBC-3
B1h
Block Device Characteristics VPD Page
SBC-3
D0h
Drive Information VPD Page
–
D1h
Firmware Revision VPD Page
–
D2h
Hardware Revision VPD Page
–
D3h
Bridge Information VPD Page
–
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Performance
Performance
Measured performance can vary for a number of reasons. The major factors affecting
drive performance are the density of the drive and the interface of the host. Additionally, overall system performance can affect the measured drive performance. When comparing drives, it is recommended that all system variables are the same, and only the
drive being tested varies.
Performance numbers will vary depending on the host system configuration.
Table 10: Drive Performance
Specification
Sequential read (64KB transfer)
Sequential write (64KB transfer)
100GB
200GB
400GB
Unit
400
400
400
MB/s
220
340
340
MB/s
Random read (4KB transfer)
50,000
50,000
50,000
IOPS
Random write (4KB transfer)
25,000
30,000
30,000
IOPS
READ latency (TYP)
0.7
0.7
0.7
ms
WRITE latency (TYP)
1.5
1.5
1.5
ms
Notes:
1. Typical I/O performance numbers as measured using Iometer with a queue depth of 32
and write cache disabled.
2. Iometer measurements are performed in the steady state region.
3. 4KB transfers used for READ/WRITE latency values.
4. System variations may affect measured results.
Reliability
Micron’s SSDs incorporate advanced technology for defect and error management.
They use various combinations of hardware-based error correction algorithms and
firmware-based static and dynamic wear-leveling algorithms.
Over the life of the SSD, uncorrectable errors may occur. An uncorrectable error is defined as data that is reported as successfully programmed to the SSD but when it is read
out of the SSD, the data differs from what was programmed.
Table 11: Uncorrectable Bit Error Rate
Uncorrectable Bit Error Rate
<1 sector per 1016 bits
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
Operation
READ
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Reliability
Mean Time To Failure
Mean time to failure (MTTF) for the SSD can be predicted based on the component reliability data using the methods referenced in the Telcordia SR-332 reliability prediction
procedures for electronic equipment.
Table 12: MTTF
Note:
Density
MTTF (Operating Hours)1
100GB
2 million
200GB
2 million
400GB
2 million
1. The product achieves an MTTF of 2 million hours, based on population statistics not relevant to individual units.
Endurance
Endurance for the SSD can be predicted based on the usage conditions applied to the
device, the internal NAND component cycles, the write amplification factor, and the
wear-leveling efficiency of the drive. Total bytes written measured with 55°C case temperature within the total bytes written values listed in this document. The table below
shows the drive lifetime for each SSD density based on predefined usage conditions.
Table 13: Drive Lifetime
Notes:
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
Density
Drive Lifetime (Total Bytes Written)
100GB
1.75PB
200GB
3.50PB
400GB
7.00PB
1. Total bytes written calculated with the drive 90% full.
2. Access patterns are 50% sequential and 50% random and consist of the following: 5%
are 4KB; 5% are 8KB; 10% are 16KB; 10% are 32KB; 35% are 64KB; and 35% are 128KB.
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Electrical Characteristics
Electrical Characteristics
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
Table 14: Power Consumption
Density
Sequential Write/Read (128KB transfer)
Unit
<10
watts
100GB, 200GB, 400GB
Table 15: Maximum Ratings
Parameter/Condition
Symbol
Min
Max
Unit
V12
10.8
13.2
V
TC
0
70
C°
–40
85
°C
Rate of temperature change
–
20
°C/hour
Relative humidity (non-condensing)
5
95
%
Voltage input
Operating temperature
Non-operating temperature
Table 16: Shock and Vibration
Parameter/Condition
Specification
Operating shock
1000G (0.5ms duration)
Operating vibration
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
10–500Hz at 3.1G
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Compliance
Compliance
Micron SSDs comply with the following:
•
•
•
•
•
•
•
•
•
•
•
RoHS
CE (Europe): EN55022, 2006 Class A and EN55024, 1998 + A1: 2001 + A2:2003
FCC: CFR Title 47, Part 15, ICES-003, all Class A
UL (US): approval to UL-60950-1, 2nd Edition, 2007-03-27, IEC 60950-1:2005, 2nd Edition
BSMI (Taiwan): approval to CNS 13438
C-TICK (Australia, New Zealand): approval to AS/NZS CISPR22
KCC RRL (Korea): approval to KCC-REM-MU2-P410m25 Class A
W.E.E.E.: Compliance with EU WEEE directive 2002/96/EC. Additional obligations
may apply to customers who place these products in the markets where WEEE is enforced
TUV (Germany): approval to IEC60950/EN60950
VCCI
IC (Canada):
- This Class A digital apparatus complies with Canadian ICES-003.
- Cet appareil numérique de la classe A est conforme à la norme NMB-003 du Canada
FCC Rules
This equipment has been tested and found to comply with the limits for a Class A digital
device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a
commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not installed and used in accordance with the instruction manual,
may cause harmful interference to radio communications. Operation of this equipment
in a residential area is likely to cause harmful interference in which case the user will be
required to correct the interference at his own expense.
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Package Dimensions
Package Dimensions
Figure 4: 2.5-Inch Package – 7mm
13.43mm/0.529in
for reference only
4.80mm ±0.38
0.189in ±0.015
7.00mm +0.00
-0.50
0.276in +0.000
-0.020
3.50mm ±0.38
0.138in ±0.015
14.00mm
0.551in
(both sides)
Drive
Connector
D&T M3 x 0.5mm
(2 PLCS) (both sides)
90.60mm
3.567in
(both sides)
100.50mm/3.957in
for reference only
0.30mm/0.012in
D&T M3 x 0.5mm
for reference only
(4 PLCS)
3.00mm
0.118in
(2 PLCS)
(both sides)
4.070mm
0.160in
61.71mm
2.430in
0.50mm
0.02in
(4 PLCS)
69.85mm ±0.25
2.750in ±0.010
0.60mm
0.02in RAD
(TYP)
RAD
9.400mm
0.370in
4.100mm
0.161in
12.00mm
0.472in
14.00mm
0.551in
1.200mm
0.047in
8.930mm
0.351in
3.00mm
0.12in RAD
(4 PLCS)
90.60mm
3.567in
100.20mm ±0.25
3.945in ±0.010
References
•
•
•
•
•
•
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
Serial Attached SCSI – 2, rev 16
SAM – 3
SCSI Primary Commands – 3
SCSI Primary Commands – 4
SAT – 2
SCSI Block Commands – 3
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Revision History
Revision History
Rev. H – 03/14
• Updated performance specifications.
• Updated Power Segment Pin Assignment table.
Rev. G – 02/13
• Updated performance and power specifications.
Rev. F – 01/13
• Updated performance specifications.
• Updated endurance and sector size support.
• Changed status from Preliminary to Production.
Rev. E – 11/12
• Removed 9.5mm package drawing.
• Updated performance specifications.
Rev. D – 9/12
• Added part number for 9.5mm: MTFDEACxxxMAS-xS1AA
• Updated Figure 1 (page 2) to add AC (9.5mm) option.
• Added 9.5mm package drawing.
Rev. C – 6/12
•
•
•
•
•
Removed part number for 15mm: MTFDEALxxxMAS-xS1AA
Removed 15mm mechanical specs on page 1.
Updated Figure 1 (page 2) to remove AL (15mm) option.
Updated on page to remove 15mm height.
Removed 15mm package drawing.
•
•
•
•
•
•
•
•
Added new part number for 7mm: MTFDEAKxxxMAS-xS1AA
Updated mechanical specs on page 1 to add 7mm height.
Updated Figure 1 (page 2) to add 7mm option.
Updated on page to add 7mm height.
Changed voltage input symbol in Table 15 (page 13) from V5 to V12.
Updated operating vibration specification in Table 16 (page 13) to include the G level.
Updated Compliance (page 14) to indicate that the P410m is a class A device.
Added new Figure 4 (page 15) for 7mm height.
Rev. B – 6/12
Rev. A – 5/12
• Initial version for certification
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P410m 2.5-Inch SAS NAND Flash SSD
Revision History
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
PDF: 09005aef84be6ef8
p410m_2_5_channel.pdf - Rev. H 03/14 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.