TN-13-20: Asynchronous Page Mode Read in M29W320DT/B Automotive Devices Introduction Technical Note Asynchronous Page Mode Read in M29W320DT/B 32Mb, 3V Supply NOR Flash Memory (Automotive Grade) Devices Introduction This technical note describes the asynchronous page mode read feature available in the following 32Mb, 3V supply NOR flash memory (automotive grade) devices: • • • • • • M29W320DB70N3E/F M29W320DB70ZA3F M29W320DB7AN6E/F M29W320DB7AZA6E/F M29W320DB80ZA3E/F M29W320DT70N3E See the M29W320DT/B data sheet for additional information on these devices. PDF: 09005aef84eb70d1 tn1320_m29w320db_async_page_mode_read - Rev. A 9/12 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron's production data sheet specifications. All information discussed herein is provided on an "as is" basis, without warranties of any kind. TN-13-20: Asynchronous Page Mode Read in M29W320DT/B Automotive Devices General Description General Description The M29W320D is a 32Mb (4Mb x 8 or 2Mb x 16) non-volatile memory device that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6 V) supply. The devices specified in this technical note support asynchronous page mode read and page read from all blocks of the array. See the M29W320DT/B data sheet for more information on array organization. The asynchronous page mode read feature consists of: • Page size: 4 words or 8 bytes • Page access: 25ns Figure 1: Logic Diagram VCC VPP /WP# 15 A[20:0] DQ[14:0] DQ15/A-1 WE# CE# OE# RY/BY# RST# BYTE# VSS PDF: 09005aef84eb70d1 tn1320_m29w320db_async_page_mode_read - Rev. A 9/12 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-13-20: Asynchronous Page Mode Read in M29W320DT/B Automotive Devices General Description Table 1: Signal Names A[20:0] Address Inputs DQ0-DQ7 Data Input/Output DQ8-DQ14 Data Input/Output DQ15A–1 Data Input/Output or Address Input CE# Chip Enable OE# Output Enable WE# Write Enable RST# Reset/Block temporary unprotect RY/BY# Ready/Busy output BYTE# Byte/word organization select VCC Core Power Supply VPP/WP# VPP/Write Protect VSS Ground NC Not Connected Internally PDF: 09005aef84eb70d1 tn1320_m29w320db_async_page_mode_read - Rev. A 9/12 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-13-20: Asynchronous Page Mode Read in M29W320DT/B Automotive Devices PAGE READ PAGE READ BUS READ operations read from the memory cells, or specific registers, in the command interface. To accelerate the READ operation, the memory array can be read in page mode, where data is internally read and stored in a page buffer. Page size is 4 words (8 bytes) and is addressed by address inputs A[1:0] in x16 bus mode and A[1:0] plus DQ15/A-1 in x8 bus mode. A valid BUS READ operation involves setting the desired address on the address inputs, applying a LOW signal (VIL) to Chip Enable (CE#) and Output Enable (OE#), and keeping Write Enable (WE#) HIGH (V IH). The data input/outputs will output the value. See the following figure and table for details of when the output becomes valid. Figure 2: Page Read AC Waveforms A[MAX:2] Valid A[1:0] Valid Valid Valid Valid tAVQV CE# tEHQX tELQV tEHQZ OE# tGHQX tGLQV DQ[15:0] PDF: 09005aef84eb70d1 tn1320_m29w320db_async_page_mode_read - Rev. A 9/12 EN tAVQV1 Valid tGHQZ Valid 4 Valid Valid Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-13-20: Asynchronous Page Mode Read in M29W320DT/B Automotive Devices PAGE READ Table 2: Page Read AC Characteristics M29W320D Parameter Symbol Alt Address valid to output valid tAVQV tACC 70/7A 80 CE# = VIL, OE# = VIL Address valid to output valid (page) tAVQV1 tPAGE CE# = VIL, OE# = VIL MAX 70 80 ns MAX 25 25 ns CE# LOW to output transition tELQX1 tLZ OE# = VIL MIN 0 0 ns CE# LOW to output valid tELQV tCE OE# = VIL MAX 70 80 ns tGLQX1 tOLZ CE# = VIL MIN 0 0 ns OE# LOW to output valid tGLQV tOE CE# = VIL MAX 30 30 ns CE# HIGH to output High-Z tEHQZ1 tHZ OE# = VIL MAX 25 25 ns OE# HIGH to output High-Z tGHQZ1 tDF OE# = VIL MAX 25 25 ns OE# LOW to output transition Note: Test Condition Unit 1. Sampled only; not 100% tested. PDF: 09005aef84eb70d1 tn1320_m29w320db_async_page_mode_read - Rev. A 9/12 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. TN-13-20: Asynchronous Page Mode Read in M29W320DT/B Automotive Devices Revision History Revision History Rev. A – 9/12 • Initial release 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. PDF: 09005aef84eb70d1 tn1320_m29w320db_async_page_mode_read - Rev. A 9/12 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved.