30CTQ035 ... 30CTQ045 30CTQ035 ... 30CTQ045 High Temperature Schottky Rectifier – Common Cathode Hochtemperatur Schottky Gleichrichterdiode – Gemeinsame Kathode Version 2013-06-07 2.8±0.3 Type Typ 0.42±0.1 13.9 2 x 15 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 35...45 V Plastic case Kunststoffgehäuse 3.9±0.3 ±0.2 ±0.3 1 2 3 2.67 4 ±0.3 4.5±0.2 Ø 3.8±0.2 4 8.7 ±0.2 14.9±0.7 1.2 Nominal current Nennstrom 10.1±0.3 1.3±0.1 1 2 3 TO-220AB Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert 0.8 ±0.2 2.54±0.1 Standard packaging in tubes Standard Lieferform in Stangen Green Molding Halogen-Free1 Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Grenz- und Kennwerte Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 2) Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 2) Forward voltage Durchlass-Spannung VF [V] 2), Tj = 25°C IF = 5 A IF = 15 A 30CTQ035 35 35 < 0.52 < 0.62 30CTQ040 40 40 < 0.52 < 0.62 30CTQ045 45 45 < 0.52 < 0.62 Max. average forward current, Dauergrenzstrom TC = 155°C TC = 155°C IFAV IFAV 15 A 2) 3) 30 A 3) 4) Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 53 A 5) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 265/290 A 2) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 351 A2s 2) Tj -50...+175°C -50...+175°C Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 2 3 4 5 TS From 4Q/2013 – Ab 4Q/2013 Per diode – Pro Diode 50% Duty cycle, rectangular waveform − 50% Tastverhältnis, Rechteckpuls Per device (parallel operation) − Pro Bauteil (Parallelbetrieb) Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 30CTQ035 ... 30CTQ045 Characteristics Kennwerte Leakage current Sperrstrom Tj = 25°C VR = VRRM Tj = 125°C VR = VRRM IR Thermal resistance junction to case Wärmewiderstand Sperrschicht – Gehäuse < 50 µA typ. 15 mA < 3.25 K/W 1) RthC Maximum Junction Capacitance Maximale Sperrschichtkapazität 900 pF 1) Cj 120 103 [%] [A] 100 2 10 Tj = 175°C 80 Tj = 125°C 10 60 Tj = 25°C 40 1 20 IF IFAV 0 0 TC 50 100 150 30CTQ0xx 10-1 [°C] 0 Rated forward current vs. temp. of the case Zul. Richtstrom in Abh. v. d. Temp. des Gehäuses VF 0.4 0.8 [V] 1.4 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 10 2 Tj = 175°C [mA] Tj = 150°C 10 Tj = 125°C 1 Tj = 100°C 10-1 Tj = 75°C IR Tj = 50°C Tj = 25°C -2 10 0 VRRM 40 60 80 100 [%] Typ. instantaneous leakage current vs. rev. voltage Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung 1 2 Per diode – Pro Diode http://www.diotec.com/ © Diotec Semiconductor AG