THB105-69 - Seoul Semiconductor

Technical Data Sheet
Pb Free
Specification
THB105-69
SSC
Drawn
Approval
Customer
Approval
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
[ Contents ]
1.
Description
2.
Absolute maximum ratings
3.
Electro-Optical characteristics
4.
Characteristic diagrams
5.
Reliability result
6.
Rank
7.
Outline Dimension
8.
Material
9.
Reel Structure
10. Packing
11. Soldering profile
12. Precaution for Use
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
THB105-69
-
1. Description
Features
Small size suitable for compact
•
1.6 X 0.8 X 0.4 mm
•
Untinted, Diffused flat
appliances.
-
Surface-mounted chip LED
device.
-
THB105-69
mold
•
Pb-free and RoHS complaint
470nm
component.
-
High brightness, High efficiency
-
Tape and Reel packing.
-
Increases the life time of battery.
Dominant Wavelength :
•
Add zener diode
Applications

Cellular phone’s keypad
lightning

Information Boards
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
2. Absolute maximum ratings
(Ta=25℃)
Parameter
Symbol
Value
Unit
Power Dissipation
Pd
46.5
mW
Forward Current
IF
15
mA
Peak Forward Current
IFM *1
50
mA
Operating Temperature
Topr.
-40 ~ 85
℃
Storage Temperature
Tstg.
-40 ~ 100
℃
Junction Temperature
TJmax
125
℃
Thermal Resistant*2
Rth
200
℃/W
*1 IFM conditions: Pulse width Tw≤ 1msec and Duty ratio≤1/10.
*2 Thermal Resistatnce is measured at following standardized SSC test environment.
3. Electro-Optical Characteristics
(Ta=25℃)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Forward Voltage
VF
IF=5㎃
2.6
2.9
3.2
V
Reverse Voltage
VR
IR=5㎃
0.6
0.8
1.5
V
Luminous Intensity*2
Iv
IF=5㎃
23
40
55
mcd
Wavelength
Λd
IF=5㎃
465
470
475
nm
Spectral Bandwidth
Δλ
IF=5㎃
-
20
-
nm
Viewing Angle*3 (Y)
2θ1/2
IF=5㎃
-
140
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the
mechanical axis of the LED package.
*3 θ1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All measurements were made under the standardized environment of SSC.
(Tolerance : Iv ±10 %, λd ±2 nm, VF ±0.1 V)
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
4. Characteristic Diagrams
Ta = 25o
Forward Current vs.
Forward Voltage
Relative Luminous Intensity vs.
Forward Current
15.0
2.5
Relative Luminous Intensity [a.u.]
10.0
7.5
5.0
2.5
2.7
2.8
2.9
3.0
3.1
2.0
1.5
1.0
0.5
0.0
0
3.2
5
10
Forward Voltage [V]
Forward Current [mA]
Forward Current vs.
Ambient Temperature
Spectrum
15
15
10
5
0
-25
0
25
50
75
Ambient Temperature [℃]
100
Relative Emission Intensity [a.u.]
20
Forward Current [mA]
Forward Current [mA]
12.5
1.0
0.8
0.6
0.4
0.2
0.0
400
500
600
700
Wavelength [nm]
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
Radiation Diagram
Ta = 25o
90
120
60
150
30
180
0
X
Y
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
5. Reliability Test
Item
Test Conditions
Duration
/ Cycle
Number Of
Damaged
Operating at Room
temperature
5mA, @25℃
500 hrs
0/22
Operating at High
temperature
5mA, @85℃
500 hrs
0/22
Operating at High
temperature
/ High humidity
5mA, @60℃,90%
500 hrs
0/22
Thermal shock test
-40~85℃ Shift (2hr/cycle)
100 cycle
0/22
Thermal resistance
Test
85℃, 85% 24hrs  Reflow 3 times
(Max 260℃ 10sec)  Thermal shock
30 cycle
1 time
0/22
ESD
HBM (1.5KΩ;100pF), 3kV
0/22
MSL : 2a (30℃, 60% : 4 weeks)
*Criterion
OK
Iv
> Initial value * 0.5
VF
Initial value ± 0.1V
ESD
IR<100A @VR=5V
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
6. Rank
IF = 5mA
BIN
IV [mcd]
VF [V]
WD [nm]
CBB
23~38(C)
2.6~2.8(B)
465 ~470(B)
CCB
23~38(C)
2.8~3.0(C)
465 ~470(B)
CDB
23~38(C)
3.0~3.2(D)
465 ~470(B)
DBB
38~55(D)
2.6~2.8(B)
465 ~470(B)
DCB
38~55(D)
2.8~3.0(C)
465 ~470(B)
DDB
38~55(D)
3.0~3.2(D)
465 ~470(B)
CBC
23~38(C)
2.6~2.8(B)
470 ~475(C)
CCC
23~38(C)
2.8~3.0(C)
470 ~475(C)
CDC
23~38(C)
3.0~3.2(D)
470 ~475(C)
DBC
38~55(D)
2.6~2.8(B)
470 ~475(C)
DCC
38~55(D)
2.8~3.0(C)
470 ~475(C)
DDC
38~55(D)
3.0~3.2(D)
470 ~475(C)
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Tolerance ±0.1, Unit : ㎜
0.30.4
(0.18)
0.18
Polarity Mark
Polarity Mark
Cathode
Cathode
1.2
1.2
1.1
1.1
Resin
1.6
1.6
PCB
PCB
0.40±0.05
0.4 ±0.05
0.8
0.8
[Top View]
Anode
Anode
0.4
0.3
Technical Data Sheet
7. Outline Dimension
[Side View]
0.8
0.8
[Bottom View]
[Recommended
[Recommended
ty Mark
2.4
0.8
Cathode
Anode
0.8
[Recommended
Solder Pattern]
Pattern]
[Recommended Solder
8. Material
Item
Substrate
chip
wire
Encapsulate
Electrode
Material
BT-Resin PCB
InGaN
Gold
Epoxy
Au Plated
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
±0.1
0.2
±0.2
±0.05
(2.75)
8.0
±0.05
1.75
2.0 ±0.05
+0.1
-0
±0.05
1.5
±0.1
3.5
4.0
1.85
4.0 ±0.1
0.5 ±0.08
180
0.95
±0.05
0.5
±0.05
11.4
+0
-3
9
±0.3
+0.2
-0
2 ±0.2
60
Technical Data Sheet
9. Reel Structure
22
13 ±0.2
Label
(1) Quantity : 4000pcs/Reel
(2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm
(3) Adhesion Strength of Cover Tape : Adhesion strength to be 0.1-0.7N when the
cover tape is turned off from the carrier tape at 10℃ angle to be the carrier tape
(4) Package : P/N, Manufacturing data Code No. and quantity to be indicated on a
damp proof Package
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
10. Packing
Reel
RANK:
XXX
QUANTITY : XXXX
LOT NUMBER : XXXXXXXXXX
PART NUMBER :
XXXXXX
SEOUL SEMICONDUCTOR CO., LTD.
HUMIDITY INDICATOR
####
Aluminum Vinyl Bag
RANK:
###
DESI PAK
###
###
#######
XXX
QUANTITY : XXXX
LOT NUMBER : XXXXXXXXXX
PART NUMBER :
XXXXXX
SEOUL SEMICONDUCTOR CO., LTD.
Outer Box Structure
1 SIDE
RANK:
QUANTITY : XXXX
c
LOT NUMBER : XXXXXXXXXX
PART NUMBER :
1
XXXXXX
2
SEOUL SEMICONDUCTOR CO., LTD.
2 SIDE
RoHS
b
a
LOT NUMBER
Rank
QTY
Material : Paper(SW3B(B))
SIZE (mm)
TYPE
a
c
b
7inch 245 220 142
SEOUL SEMICONDUCTOR CO., LTD.
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
11. Soldering profile
(1) Lead Solder
Lead Solder
Pre-heat
120~150℃
Pre-heat time
120 sec. Max.
Peak-Temperature
240℃ Max.
Soldering time
Condition
10 sec. Max.
Lead Solder
2.5~5 o C / sec.
2.5~5 C / sec.
Pre-heating
120~150 oC
240 oC Max.
10 sec. Max.
60sec. Max.
Above 200 oC
120sec. Max.
(2) Lead-Free Solder
Lead Free Solder
Pre-heat
150~200℃
Pre-heat time
120 sec. Max.
Peak-Temperature
260℃ Max.
Soldering time
Condition
10 sec. Max.
Lead-frame Solder
1~5 oC / sec.
1~5 oC / sec.
Pre-heating
150~200 o C
260 oC Max.
10 sec. Max.
60sec. Max.
Above 220 oC
120sec. Max.
(3) Hand Soldering conditions
Do not exceed 3 seconds at maximum 280º C under soldering iron.
Note : In case that the soldered products are reused in soldering process,
we don’t guarantee the products.
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)
Technical Data Sheet
12. Precaution for Use
(1) Storage
LEDs must be stored at clean atmosphere. If the LEDs are stored for 3 months or more
after shipment from SSC, storage in a sealed container with a nitrogen atmosphere is
recommended. To avoid absorption of moisture, it is recommended to store in a dry box
(or a desiccator) with a desiccant.
* Shelf Life : 12 months at < 40ºC and 90%RH
(2) Attention after open.
LED is correspond to SMD, when LED be soldered dip, interfacial separation may affect
the light transmission efficiency, causing the light intensity to drop. After opened and
mounted the soldering shall be quickly.
* Within 672 hours at factory conditions of equal to or less than 30ºC/60%RH, or
Stored at < 10% RH
(3) Repack unused products with anti-moisture packing, fold to close any opening and
then store in a dry place.
(4) In the case of change color of indicator on desiccant, components shall be dried
10-12hr at 60±5ºC.
(5) When the LED is operating, the driving current should be determined after considering
the maximum ambient temperature requirements.
(6) When using multiple LEDs, It is recommended to connect a resistor on each LED.
Otherwise, LEDs may vary due to variation in forward voltage of the LEDs.
(7) The driving circuit must be designed to allow forward voltage only when it is ON or
OFF. If the reverse voltage is applied to LED, migration can be generated resulting
in LED damage
(8) Any mechanical force or excessive vibration should be avoided during temperature
cooling process to normal temperature after reflow.
(9) Rapid cooling shall be avoided.
(10) LED should not be placed on a flexible area on the PCB.
(11) This device should not be used in any type of fluid such as water, oil, organic solvent
etc. When washing is required, IPA should be used.
(12) Anti radioactive ray design is not considered for the products.
(13) Damage prevention from ESD or Surge.
It is highly recommended to use the wrist-band or anti electrostatic gloves when handling
the LED’s All devices, equipments and machines mush be properly grounded
(14) The appearance and specifications of the product may be modified for improvement
without notice.
Rev. 05
November 2013
WWW.SEOULSEMICON.COM
서식번호 : SSC-QP-7-07-25 (Rev.0.0)