PowerPoint 프레젠테이션 - Seoul Semiconductor

Z5-M1 – High-Power LED
Superior Efficacy and Lumen output with Small Form Factor
Z Power LED – Z5-M1
SZ5-M1-WX-XX (Cool, Neutral, Warm)
MacAdam
3-Step
RoHS
Product Brief
Description
Features and Benefits
•
The Z-Power series is designed for high
flux output applications with high current
operation capability.
•
It incorporates state of the art SMD
design and low thermal resistant
material.
•
•
•
•
•
•
•
•
The Z Power LED is ideal light sources
for directional lighting applications such
as Spot Lights, various outdoor
applications, automotive lightings and
high performance torches .
High Lumen Output and Efficacy
Designed for high current operation
Low Thermal Resistance
Wide CCT range 3000~7000K
High Color Quality, CRI Min. 80
ANSI compliant Binning
MacAdam 3 Step for Warm White
Key Applications
•
•
•
•
•
•
•
Indoor lighting
Outdoor lighting
Automotive
Architectural lighting
Industrial lighting (High/Low bay)
Portable Torch
Home appliance
Table 1. Product Selection Table
CCT
CRI
Part Number
Color
Min.
Typ.
Max.
Min
SZ5-M1-W0-00
Cool White
4700K
5300K
7000K
70
SZ5-M1-WN-00
Neutral White
3700K
4000K
4700K
70
SZ5-M1-WN-C8
Neutral White
3700K
4000K
4700K
80
SZ5-M1-WW-C8
Warm White
2600K
3000K
3700K
80
Rev2.0, October 16, 2013
1
www.seoulsemicon.com
Z5-M1 – High-Power LED
Table of Contents
Index
•
Product Brief
•
Table of Contents
•
Performance Characteristics
•
Color Bin Structure
•
Mechanical Dimensions
•
Packaging Information
•
Product Nomenclature (Labeling Information)
•
Recommended Solder Pad
•
Reflow Soldering Characteristics
•
Handling of Silicone Resin for LEDs
•
Precaution For Use
•
Company Information
Rev2.0, October 16, 2013
2
www.seoulsemicon.com
Z5-M1 – High-Power LED
Performance Characteristics
Table 2. Electro Optical Characteristics, Tj = 25ºC, RH30%
Typical
Luminous Flux [2]
ФV [3] (lm)
CCT (K)
Part Number
[1]
Typical Forward
Voltage (VF) [4]
CRI [5],
Ra
Viewing
Angle
(degrees)
2Θ ½
Typ.
350mA
700mA*
1.2A*
350mA
700mA*
1.2A*
Min.
Typ.
SZ5-M1-W0-00
5300
155
282
429
2.95
3.14
3.33
70
118
SZ5-M1-WN-00
4000
150
273
415
2.95
3.14
3.33
70
118
SZ5-M1-WN-C8
4000
138
250
382
2.95
3.14
3.33
80
118
SZ5-M1-WW-C8
3000
128
231
353
2.95
3.14
3.33
80
118
Table 3. Electro Optical Characteristics, Tj = 85ºC
Typical
Luminous Flux [2]
ФV [3] (lm)
CCT (K)
Part Number
[1]
Typical Forward
Voltage (VF) [4]
Typ.
350mA
700mA*
1.2A*
350mA
700mA*
1.2A*
SZ5-M1-W0-00
5300
142
258
393
2.78
2.96
3.14
SZ5-M1-WN-00
4000
137
250
380
2.78
2.96
3.14
SZ5-M1-WN-C8
4000
126
229
349
2.78
2.96
3.14
SZ5-M1-WW-C8
3000
117
210
322
2.78
2.96
3.14
Notes :
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color
coordinate : 0.005, CCT 5% tolerance.
(2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements.
(3) ФV is the total luminous flux output as measured with an integrating sphere.
(4) Tolerance is 0.06V on forward voltage measurements.
(5) Tolerance is 2.0 on CRI measurements.
* No values are provided by real measurement. Only for reference purpose
Rev2.0, October 16, 2013
3
www.seoulsemicon.com
Z5-M1 – High-Power LED
Performance Characteristics
Table 4. Absolute Maximum Ratings, Tj = 25ºC
Value
Parameter
Symbol
Forward Current [1]
Peak Pulsed Forward Current
Unit
IF
[2]
Min.
Typ.
Max.
-
-
1.5
A
2.0
A
IF
Reverse Voltage
VR
-
-
5
V
Power Dissipation
Pd
-
-
5.22
W
Junction Temperature
Tj
-
-
150
ºC
Operating Temperature
Topr
- 40
-
125
ºC
Storage Temperature
Tstg
- 40
-
125
ºC
Thermal resistance (J to S) [3]
RθJ-S
-
4.5
-
K/W
ESD Sensitivity(HBM) [4]
Class 3A JESD22-A114-E
Notes :
(1) At Junction Temperature 25℃ condition.
(2) Pulse width ≤10ms, duty cycle ≤ 10% condition.
(3) RθJ-S is tested at 350mA.
(4) The zener diode is included to protect the product from ESD.
Rev2.0, October 16, 2013
4
www.seoulsemicon.com
Z5-M1 – High-Power LED
Relative Spectral Distribution
Fig 1. Color Spectrum (Tj = 25ºC)
Relative Radiant Power [%]
1.25
Cool white
Neutral white
Warm white
1.00
0.75
0.50
0.25
0.00
350
400
450
500
550
600
650
700
750
800
60
80
Wavelength [nm]
Fig 2. Typical Spatial Distribution
100
Relative Luminous Intensity [%]
90
80
70
60
50
40
30
20
10
0
-80
-60
-40
-20
0
20
40
Angular Displacement [degrees]
Rev2.0, October 16, 2013
5
www.seoulsemicon.com
Z5-M1 – High-Power LED
Forward Current Characteristics
Fig 3. Forward Voltage vs. Forward Current (Tj = 25℃)
1.6
1.4
Forward Current [A]
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
Forward Voltage [V]
Fig 4. Forward Current vs. Relative Luminous Flux (T j = 25℃)
400
Relative Luminous Flux [%]
350
300
250
200
150
100
50
0
0
200
400
600
800
1000
1200
1400
1600
Forward Current [mA]
Rev2.0, October 16, 2013
6
www.seoulsemicon.com
Z5-M1 – High-Power LED
Forward Current Characteristics
Fig 5. Forward Current vs. CIE X, Y Shift, Tj = 25℃
0.02
CIE(X)
CIE(Y)
0.01
0.00
-0.01
-0.02
0
200
400
600
800
1000
1200
1400
Forward Current [mA]
Rev2.0, October 16, 2013
7
www.seoulsemicon.com
Z5-M1 – High-Power LED
Junction Temperature Characteristics
Fig 6. Relative Light Output vs. Junction Temperature, IF = 350mA
120
Relative luminous flux [%]
100
80
60
40
20
0
25
50
75
100
125
150
o
Junction Temperature [ C]
Fig 7. Junction Temp. vs. CIE X, Y Shift, IF = 350mA
0.02
CIE(X)
CIE(Y)
0.01
0.00
-0.01
-0.02
25
50
75
100
125
150
o
Junction Temperature [ C]
Rev2.0, October 16, 2013
8
www.seoulsemicon.com
Z5-M1 – High-Power LED
Junction Temperature Characteristics
Fig 8. Relative Forward vs. Junction Temperature, IF = 350mA
0.05
0.00
-0.05
 VF
-0.10
-0.15
-0.20
-0.25
-0.30
40
60
80
100
120
140
160
o
Junction Temperature [ C]
Rev2.0, October 16, 2013
9
www.seoulsemicon.com
Z5-M1 – High-Power LED
Ambient Temperature Characteristics
Fig 9. Maximum Forward Current vs. Ambient Temperature, Tj(max.) = 150℃, IF =1.5A
1.6
Rth(j-a)=15℃/W
Maximum Current [A]
1.4
Rth(j-a)=20℃/W
Rth(j-a)=25℃/W
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
140
o
Ambient Temperature [ C]
Rev2.0, October 16, 2013
10
www.seoulsemicon.com
Z5-M1 – High-Power LED
Color Bin Structure
Table 5. Bin Code description (@IF=350mA, Tj=25℃)
Luminous Flux (lm)
Color
Chromaticity
Coordinate
Part Number
Bin Code
Min.
Max.
V2
130
140
V3
140
150
W1
150
160
W2
160
V2
Bin Code
Min.
Max.
G
2.75
3.00
H
3.00
3.25
170
I
3.25
3.50
130
140
G
2.75
3.00
V3
140
150
H
3.00
3.25
W1
150
160
W2
160
170
I
3.25
3.50
U3
109
118.5
G
2.75
3.00
V1
118.5
130
H
3.00
3.25
V2
130
140
V3
140
150
I
3.25
3.50
U3
109
118.5
G
2.75
3.00
V1
118.5
130
H
3.00
3.25
V2
130
140
V3
140
150
I
3.25
3.50
SZ5-M1-W0-00
Refer to page.12
SZ5-M1-WN-00
Refer to page.13
SZ5-M1-WN-C8
Refer to page.13
SZ5-M1-WW-C8
Rev2.0, October 16, 2013
Typical Forward Voltage (VF)
Refer to page.14
11
www.seoulsemicon.com
Z5-M1 – High-Power LED
Color Bin Structure
Table 6. Flux Bin Code description (@Tj=85℃)
Luminous Flux (lm)
350mA*
700mA*
Bin Code
Min.
Max.
Min.
Max.
U3
100
109
182
198
V1
109
119
198
217
V2
119
129
217
234
V3
129
138
234
251
W1
138
147
251
268
W2
147
156
268
284
Table 7. VF Bin Code description (@Tj=85℃)
Forward Voltage (VF)
350mA*
700mA*
Bin Code
Min.
Max.
Min.
Max.
G
2.60
2.82
2.77
3.02
H
2.82
3.06
3.02
3.27
I
3.06
3.30
3.27
3.52
* No values are provided by real measurement. Only for reference purpose.
Rev2.0, October 16, 2013
12
www.seoulsemicon.com
Z5-M1 – High-Power LED
Color Bin Structure
CIE Chromaticity Diagram (Cool white), Tj =25℃, IF = 350mA
A0
CIE x
0.3028
0.3041
0.3126
0.3115
A1
CIE y
0.3304
0.3240
0.3324
0.3393
CIE x
0.3115
0.3126
0.3210
0.3205
CIE y
0.3256
0.3187
0.3261
0.3334
CIE x
0.3068
0.3082
0.3155
0.3146
CIE y
0.3462
0.3389
0.3461
0.3539
CIE x
0.3292
0.3293
0.3373
0.3376
CIE y
0.3384
0.3306
0.3369
0.3451
CIE x
0.3222
0.3226
0.3295
0.3294
CIE y
0.3616
0.3534
0.3601
0.3687
CIE x
0.3463
0.3456
0.3539
0.3552
CIE y
0.3514
0.3428
0.3487
0.3578
CIE x
0.3366
0.3364
0.3433
0.3440
A5
CIE x
0.3136
0.3146
0.3221
0.3216
CIE y
0.3539
0.3461
0.3534
0.3616
CIE x
0.3212
0.3217
0.3293
0.3293
CIE y
0.3243
0.3178
0.3234
0.3306
CIE x
0.3294
0.3295
0.3364
0.3366
CIE y
0.3687
0.3601
0.3669
0.3760
CIE x
0.3373
0.3369
0.3448
0.3456
CIE y
0.3369
0.3288
0.3345
0.3428
CIE x
0.3440
0.3433
0.3500
0.3514
CIE x
0.3126
0.3136
0.3216
0.3210
CIE y
0.3187
0.3120
0.3190
0.3261
CIE x
0.3082
0.3096
0.3164
0.3155
CIE y
0.3389
0.3316
0.3384
0.3461
CIE x
0.3293
0.3293
0.3369
0.3373
CIE y
0.3306
0.3234
0.3288
0.3369
CIE x
0.3200
0.3207
0.3292
0.3290
CIE y
0.3534
0.3451
0.3514
0.3601
CIE x
0.3456
0.3448
0.3526
0.3539
CIE y
0.3428
0.3345
0.3400
0.3487
CIE x
0.3381
0.3376
0.3463
0.3470
CIE x
0.3055
0.3068
0.3146
0.3136
CIE y
0.3046
0.2980
0.3046
0.3120
CIE x
0.3155
0.3164
0.3230
0.3225
CIE y
0.3461
0.3384
0.3451
0.3534
CIE x
0.3217
0.3222
0.3294
0.3293
CIE y
0.3572
0.3462
0.3539
0.3656
CIE x
0.3290
0.3292
0.3376
0.3381
CIE y
0.3601
0.3514
0.3578
0.3669
CIE x
0.3369
0.3366
0.3440
0.3448
CIE y
0.3740
0.3616
0.3687
0.3810
CIE x
0.3470
0.3463
0.3552
0.3572
CIE y
0.3316
0.3243
0.3306
0.3384
B9
C3
C7
CIE y
0.3120
0.3046
0.3110
0.3190
B4
B8
C2
CIE y
0.3177
0.3113
0.3187
0.3256
A9
B3
B7
13
A4
CIE y
0.3324
0.3256
0.3334
0.3408
A8
B2
C6
Rev2.0, October 16, 2013
A3
CIE y
0.3240
0.3177
0.3256
0.3324
A7
C1
C5
CIE x
0.3448
0.3440
0.3514
0.3526
CIE x
0.3146
0.3155
0.3225
0.3221
B6
C0
CIE x
0.3376
0.3373
0.3456
0.3463
CIE y
0.3113
0.3046
0.3120
0.3187
B1
B5
CIE x
0.3293
0.3294
0.3366
0.3369
CIE x
0.3041
0.3055
0.3136
0.3126
A6
B0
CIE x
0.3207
0.3212
0.3293
0.3292
A2
CIE y
0.3393
0.3324
0.3408
0.3481
CIE y
0.3656
0.3539
0.3616
0.3740
C4
C8
CIE y
0.3451
0.3369
0.3428
0.3514
C9
CIE y
0.3810
0.3687
0.3760
0.3891
www.seoulsemicon.com
Z5-M1 – High-Power LED
Color Bin Structure
CIE Chromaticity Diagram (Neutral white), Tj =25℃, IF = 350mA
D0
CIE x
0.3548
0.3536
0.3625
0.3641
D1
CIE y
0.3736
0.3646
0.3711
0.3804
CIE x
0.3641
0.3625
0.3714
0.3736
CIE y
0.3616
0.3521
0.3578
0.3677
CIE x
0.3512
0.3497
0.3575
0.3590
CIE y
0.3874
0.3775
0.3855
0.3958
CIE x
0.3869
0.3842
0.3970
0.4006
CIE y
0.3751
0.3646
0.3716
0.3825
CIE x
0.3670
0.3650
0.3758
0.3783
D5
CIE x
0.3608
0.3590
0.3670
0.3692
CIE y
0.3465
0.3385
0.3441
0.3521
CIE x
0.3590
0.3575
0.3650
0.3670
CIE y
0.3958
0.3855
0.3935
0.4044
CIE x
0.3714
0.3692
0.3813
0.3842
CIE y
0.3578
0.3489
0.3550
0.3646
CIE x
0.3783
0.3758
0.3863
0.3898
CIE x
0.3625
0.3608
0.3692
0.3714
CIE y
0.3521
0.3441
0.3489
0.3578
CIE x
0.3562
0.3548
0.3641
0.3661
CIE y
0.3775
0.3677
0.3751
0.3855
CIE x
0.3842
0.3813
0.3934
0.3970
CIE y
0.3646
0.3550
0.3610
0.3716
CIE x
0.3760
0.3736
0.3869
0.3902
CIE x
0.3524
0.3512
0.3590
0.3608
CIE y
0.3826
0.3736
0.3804
0.3900
CIE x
0.3661
0.3641
0.3736
0.3760
CIE y
0.3855
0.3751
0.3825
0.3935
CIE x
0.3692
0.3670
0.3783
0.3813
CIE y
0.3974
0.3874
0.3958
0.4067
CIE x
0.3902
0.3869
0.4006
0.4044
CIE y
0.3555
0.3465
0.3521
0.3616
D9
E3
E7
14
D4
CIE y
0.3711
0.3616
0.3677
0.3775
D8
E2
E6
Rev2.0, October 16, 2013
D3
CIE y
0.3646
0.3555
0.3616
0.3711
D7
E1
E5
CIE x
0.3813
0.3783
0.3898
0.3934
CIE x
0.3536
0.3524
0.3608
0.3625
D6
E0
CIE x
0.3736
0.3714
0.3842
0.3869
D2
CIE y
0.3804
0.3711
0.3775
0.3874
CIE y
0.3900
0.3804
0.3874
0.3974
E4
E8
CIE y
0.3677
0.3578
0.3646
0.3751
E9
CIE y
0.4067
0.3958
0.4044
0.4160
www.seoulsemicon.com
Z5-M1 – High-Power LED
Color Bin Structure
CIE Chromaticity Diagram (Warm white), Tj = 25℃, IF = 350mA
F0
CIE x
0.3996
0.396
0.4104
0.4146
F1
CIE y
0.4015
0.3907
0.3978
0.4089
CIE x
0.4146
0.4104
0.4248
0.4299
CIE y
0.3865
0.3751
0.3814
0.3931
CIE x
0.4299
0.4261
0.4324
0.4365
CIE y
0.4189
0.4100
0.4122
0.4212
CIE x
0.4324
0.4284
0.4345
0.4387
CIE y
0.4122
0.4033
0.4055
0.4145
CIE x
0.4345
0.4302
0.4361
0.4406
CIE y
0.4055
0.3964
0.3985
0.4077
CIE x
0.4361
0.4316
0.4373
0.4420
CIE y
0.3998
0.3906
0.3893
0.3985
CIE x
0.4687
0.4636
0.4575
0.4625
CIE y
0.4304
0.4211
0.4197
0.4289
CIE x
0.4697
0.4644
0.4585
0.4636
CIE y
0.4225
0.4132
0.4118
0.4211
CIE x
0.4703
0.4648
0.4591
0.4644
F5
CIE x
0.4062
0.4017
0.4147
0.4198
CIE y
0.4033
0.3943
0.3964
0.4055
CIE x
0.4302
0.4259
0.4316
0.4361
CIE y
0.3964
0.3873
0.3893
0.3985
CIE x
0.4625
0.4575
0.4515
0.4562
CIE y
0.4289
0.4197
0.4182
0.4275
CIE x
0.4636
0.4585
0.4526
0.4575
CIE y
0.4211
0.4118
0.4104
0.4197
CIE x
0.4644
0.4591
0.4534
0.4585
CIE y
0.4132
0.4038
0.4025
0.4188
CIE x
0.4648
0.4593
0.4538
0.4591
CIE y
0.4077
0.3990
0.4011
0.4100
CIE x
0.4223
0.4185
0.4243
0.4284
CIE y
0.4011
0.3922
0.3943
0.4033
CIE x
0.4243
0.4203
0.4259
0.4302
CIE y
0.3943
0.3853
0.3873
0.3964
CIE x
0.4496
0.4451
0.4515
0.4562
CIE y
0.4275
0.4182
0.4168
0.4260
CIE x
0.4575
0.4526
0.4468
0.4515
CIE y
0.4197
0.4104
0.4090
0.4182
CIE x
0.4585
0.4534
0.4477
0.4526
CIE y
0.4118
0.4025
0.4012
0.4104
CIE x
0.4591
0.4538
0.4483
0.4534
F4
CIE y
0.3978
0.3865
0.3931
0.4048
CIE x
0.3925
0.3889
0.4017
0.4062
CIE y
0.3990
0.3902
0.3922
0.4011
CIE x
0.4185
0.4147
0.4203
0.4243
CIE y
0.3922
0.3834
0.3853
0.3943
CIE x
0.4430
0.4387
0.4451
0.4496
CIE y
0.4236
0.4145
0.4168
0.4260
CIE x
0.4451
0.4406
0.4468
0.4515
CIE y
0.4182
0.4090
0.4077
0.4168
CIE x
0.4526
0.4477
0.4420
0.4468
CIE y
0.4104
0.4012
0.3998
0.4090
CIE x
0.4534
0.4483
0.4428
0.4477
CIE y
0.4025
0.3932
0.3919
0.4012
CIE x
0.4810
0.4758
0.4697
0.4750
G13
CIE y
0.4145
0.4055
0.4077
0.4168
H13
H23
H33
CIE y
0.4212
0.4122
0.4145
0.4236
G42
H12
H22
CIE y
0.3902
0.3814
0.3834
0.3922
G31
G41
H11
CIE y
0.3798
0.369
0.3751
0.3865
G14
G24
G34
H43
Rev2.0, October 16, 2013
CIE x
0.4104
0.4062
0.4198
0.4248
G23
H32
H42
CIE x
0.4758
0.4703
0.4644
0.4697
CIE x
0.4284
0.4243
0.4302
0.4345
H21
H31
CIE x
0.4750
0.4697
0.4636
0.4687
CIE y
0.4100
0.4011
0.4033
0.4122
F3
CIE y
0.3907
0.3798
0.3865
0.3978
G12
G44
H14
CIE x
0.4477
0.4428
0.4373
0.4420
CIE x
0.4261
0.4223
0.4284
0.4324
G33
G43
CIE x
0.4406
0.4361
0.4420
0.4468
CIE y
0.4165
0.4077
0.4100
0.4189
G22
G32
CIE x
0.4387
0.4345
0.4406
0.4451
CIE x
0.396
0.3925
0.4062
0.4104
G11
G21
CIE x
0.4365
0.4324
0.4387
0.4430
F2
CIE y
0.4089
0.3978
0.4048
0.4165
CIE y
0.4090
0.3998
0.3985
0.4077
H24
H34
CIE y
0.4012
0.3919
0.3906
0.3998
H41
CIE y
0.4319
0.4225
0.4211
0.4304
H44
CIE y
0.4038
0.3944
0.3932
0.4025
15
www.seoulsemicon.com
Z5-M1 – High-Power LED
Mechanical Dimensions
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) Undefined tolerance is ±0.1mm
Rev2.0, October 16, 2013
16
www.seoulsemicon.com
Z5-M1 – High-Power LED
Emitter Tape & Reel Packaging
Rev2.0, October 16, 2013
17
www.seoulsemicon.com
Z5-M1 – High-Power LED
Product Nomenclature
RANK :
QUANTITY : #####
LOT NUMBER : ###### #### ###
SSC PART NUMBER : ### ## ## ##
Table 8. Part Numbering System : X1X2X3 - X4X5 - X6X7 - X8X9
Part Number Code
Description
Part Number
X1
Company
S
X2
Z-Power LED series number
Z
X3
PKG series
5
X4
PKG series
M
M series
X5
Revision number
1
New version
X6 X7
Color Specification
W0
Pure white
WN
Neutral white
WW
Warm white
C8
CRI (min.) 80
C9
CRI (min.) 90
00
The others
X8 X9
Color Specification
Value
Table 9. Lot Numbering System : Y1Y1Y2Y3Y3Y4Y5Y5Y5Y5 - Y6Y6Y6 - Y7Y7Y7 - Y8Y8Y8Y8Y8Y8Y8
Lot Number Code
Description
Y1
Year
Y2
Month
Y3
Day
Y4
Production area
Y5
Mass order
Y6
Taping number
Y7
Reel number
Y8
Internal management number
Rev2.0, October 16, 2013
18
www.seoulsemicon.com
Z5-M1 – High-Power LED
Recommended Solder Pad
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) This drawing without tolerances are for reference only.
(4) Undefined tolerance is ±0.1mm.
Rev2.0, October 16, 2013
19
www.seoulsemicon.com
Z5-M1 – High-Power LED
Reflow Soldering Characteristics
IPC/JEDEC J-STD-020
Table 10.
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Average ramp-up rate (Tsmax to Tp)
3° C/second max.
3° C/second max.
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (Tsmin to Tsmax) (ts)
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-180 seconds
Time maintained above:
- Temperature (TL)
- Time (tL)
183 °C
60-150 seconds
217 °C
60-150 seconds
Peak Temperature (Tp)
215℃
260℃
Time within 5°C of actual Peak
Temperature (tp)2
10-30 seconds
20-40 seconds
Ramp-down Rate
6 °C/second max.
6 °C/second max.
Time 25°C to Peak Temperature
6 minutes max.
8 minutes max.
Caution
(1) Reflow soldering is recommended not to be done more than two times. In the case of more than
24 hours passed soldering after first, LEDs will be damaged.
(2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable,
suitable tools must be used.
(3) Die slug is to be soldered.
(4) When soldering, do not put stress on the LEDs during heating.
(5) After soldering, do not warp the circuit board.
Rev2.0, October 16, 2013
20
www.seoulsemicon.com
Z5-M1 – High-Power LED
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to
LEDs without a silicone sealant, since the surface can also become scratched.
(3) When populating boards in SMT production, there are basically no restrictions regarding the form
of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be
prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s
reflector area.
(4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These
conditions must be considered during the handling of such devices. Compared to standard
encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As
mentioned previously, the increased sensitivity to dust requires special care during processing. In
cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of components.
(5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are
used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic
cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED.
(6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this
product with acid or sulfur material in sealed space.
(7) Avoid leaving fingerprints on silicone resin parts.
Rev2.0, October 16, 2013
21
www.seoulsemicon.com
Z5-M1 – High-Power LED
Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend storing Z5 Series LEDs in a dry box with a
desiccant . The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of
RH50%.
(2) Use Precaution after Opening the Packaging
Use proper SMD techniques when the LED is to be soldered dipped as separation of the lens may
affect the light output efficiency.
Pay attention to the following:
a. Recommend conditions after opening the package
- Sealing / Temperature : 5 ~ 40℃ Humidity : less than RH30%
b. If the package has been opened more than 1 year (MSL 2) or the color of
the desiccant changes, components should be dried for 10-12hr at 60±5℃
(3) Do not apply mechanical force or excess vibration during the cooling process to normal
temperature after soldering.
(4) Do not rapidly cool device after soldering.
(5) Components should not be mounted on warped (non coplanar) portion of PCB.
(6) Radioactive exposure is not considered for the products listed here in.
(7) Gallium arsenide is used in some of the products listed in this publication. These products are
dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the
liquid or inhale the gas generated by such products when chemically disposed of.
(8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(9) When the LEDs are in operation the maximum current should be decided after measuring the
package temperature.
(10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or
more after being shipped from Seoul Semiconductor. A sealed container with a nitrogen atmosphere
should be used for storage.
(11) The appearance and specifications of the product may be modified for improvement without
notice.
(12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration.
Rev2.0, October 16, 2013
22
www.seoulsemicon.com
Z5-M1 – High-Power LED
Precaution for Use
(13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures ca
n penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. T
he result can be a significant loss of light output from the fixture. Knowledge of the properties of the m
aterials selected to be used in the construction of fixtures can help prevent these issues.
(14) The slug is electrically isolated.
(15) Attaching LEDs, do not use adhesives that outgas organic vapor.
(16) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the rev
erse voltage is applied to LED, migration can be generated resulting in LED damage.
(17) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is
a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
a. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LEDs may
cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls:
- Humidity control (ESD gets worse in a dry environment)
Rev2.0, October 16, 2013
23
www.seoulsemicon.com
Z5-M1 – High-Power LED
Precaution for Use
b. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
- Changes to the performance of the LED package
(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires.
- This damage usually appears due to the thermal stress produced during the EOS event.
c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
Rev2.0, October 16, 2013
24
www.seoulsemicon.com
Z5-M1 – High-Power LED
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than
10,000 patents globally, while offering a wide range of LED technology and production capacity in
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs.
The company’s broad product portfolio includes a wide array of package and device choices such as
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type
LEDs as well as custom modules, displays, and sensors.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.
Rev2.0, October 16, 2013
25
www.seoulsemicon.com