Z5-P1 – High-Power LED Superior Efficacy and Lumen output with Small Form Factor Z Power LED – Z5-P1 SZ5-P1-WX-XX (Cool, Neutral, Warm) MacAdam 3-Step RoHS Product Brief Description Features and Benefits • The Z-Power series is designed for high flux output applications with high current operation capability. • It incorporates state of the art SMD design and low thermal resistant material. • • • • • • • • The Z Power LED is ideal light sources for directional lighting applications such as Spot Lights, various outdoor applications, automotive lightings and high performance torches . High Lumen Output and Efficacy Designed for high current operation Low Thermal Resistance Wide CCT range 2600~7000K High Color Quality ANSI compliant Binning MacAdam 3 Step for Warm White Key Applications • • • • • • • Indoor lighting Outdoor lighting Automotive Architectural lighting Industrial lighting (High/Low bay) Portable Torch Home appliance Table 1. Product Selection Table CCT CRI Part Number Color Min. Typ. Max. Min SZ5-P1-W0-00 Cool White 4700K 5300K 7000K 70 SZ5-P1-WN-00 Neutral White 3700K 4000K 4700K 70 SZ5-P1-WN-C8 Neutral White 3700K 4000K 4700K 80 SZ5-P1-WW-C8 Warm White 2600K 3000K 3700K 80 Rev1.0, November 18, 2013 1 www.seoulsemicon.com Z5-P1 – High-Power LED Table of Contents Index • Product Brief • Table of Contents • Performance Characteristics • Color Bin Structure • Mechanical Dimensions • Packaging Information • Product Nomenclature (Labeling Information) • Recommended Solder Pad • Reflow Soldering Characteristics • Handling of Silicone Resin for LEDs • Precaution For Use • Company Information Rev1.0, November 18, 2013 2 www.seoulsemicon.com Z5-P1 – High-Power LED Performance Characteristics Table 2. Electro Optical Characteristics, Tj = 25ºC, RH30% Part Number Typical Luminous Flux [2] ФV [3] (lm) CCT (K) [1] Typical Forward Voltage (VF) [4] CRI [5], Ra Viewing Angle (degree s) 2Θ ½ Typ. 350mA 700m* 1.0A* 350mA 700m* 1.0A* Min. Typ. SZ5-P1-W0-00 5300 148 260 338 3.05 3.26 3.39 70 118 SZ5-P1-WN-00 4000 143 251 327 3.05 3.26 3.39 70 118 SZ5-P1-WN-C8 4000 128 225 292 3.05 3.26 3.39 80 118 SZ5-P1-WW-C8 3000 115 202 263 3.05 3.26 3.39 80 118 Table 3. Electro Optical Characteristics, Tj = 85ºC Typical Luminous Flux [2] ФV [3] (lm) CCT (K) Part Number [1] Typical Forward Voltage (VF) [4] Typ. 350mA 700mA* 1.0A* 350mA 700mA* 1.0A* SZ5-P1-W0-00 5300 134 235 304 2.90 3.11 3.23 SZ5-P1-WN-00 4000 129 226 294 2.90 3.11 3.23 SZ5-P1-WN-C8 4000 115 202 263 2.90 3.11 3.23 SZ5-P1-WW-C8 3000 104 182 236 2.90 3.11 3.23 Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (2) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements. (3) ФV is the total luminous flux output as measured with an integrating sphere. (4) Tolerance is 0.06V on forward voltage measurements. (5) Tolerance is 2.0 on CRI measurements. * No values are provided by real measurement. Only for reference purpose. Rev1.0, November 18, 2013 3 www.seoulsemicon.com Z5-P1 – High-Power LED Performance Characteristics Table 4. Absolute Maximum Ratings, Tj = 25ºC Value Parameter Symbol Forward Current [1] Peak Pulsed Forward Current Unit IF [2] Min. Typ. Max. - - 1.0 A 1.6 A IF Reverse Voltage VR - - 5 V Power Dissipation Pd - - 3.39 W Junction Temperature Tj - - 150 ºC Operating Temperature Topr - 40 - 125 ºC Storage Temperature Tstg - 40 - 125 ºC Thermal resistance (J to S) [3] RθJ-S - 5.5 - K/W ESD Sensitivity(HBM) [4] Class 3A JESD22-A114-E Notes : (1) At Junction Temperature 25℃ condition. (2) Pulse width ≤10ms, duty cycle ≤ 10% condition. (3) RθJ-S is tested at 350mA. (4) The zener diode is included to protect the product from ESD. Rev1.0, November 18, 2013 4 www.seoulsemicon.com Z5-P1 – High-Power LED Relative Spectral Distribution Fig 1. Color Spectrum (Tj = 25ºC) Relative Radiant Power [%] 1.25 Cool white Neutral white Warm white 1.00 0.75 0.50 0.25 0.00 350 400 450 500 550 600 650 700 750 800 60 80 Wavelength [nm] Fig 2. Typical Spatial Distribution 100 Relative Luminous Intensity [%] 90 80 70 60 50 40 30 20 10 0 -80 -60 -40 -20 0 20 40 Angular Displacement [degrees] Rev1.0, November 18, 2013 5 www.seoulsemicon.com Z5-P1 – High-Power LED Forward Current Characteristics Fig 3. Forward Voltage vs. Forward Current (Tj = 25ºC) 1.2 Forward Current [A] 1.0 0.8 0.6 0.4 0.2 0.0 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 Forward Voltage [V] Fig 4. Forward Current vs. Relative Luminous Flux (T J=25℃) Relative Luminous Flux [%] 300 250 200 150 100 50 0 0 200 400 600 800 1000 1200 Forward Current [mA] Rev1.0, November 18, 2013 6 www.seoulsemicon.com Z5-P1 – High-Power LED Forward Current Characteristics Fig 5. Forward Current vs. CIE X, Y Shift, Tj = 25ºC 0.02 CIE(X) CIE(Y) 0.01 0.00 -0.01 -0.02 0 200 400 600 800 1000 Forward Current [mA] Rev1.0, November 18, 2013 7 www.seoulsemicon.com Z5-P1 – High-Power LED Junction Temperature Characteristics Fig 6. Relative Light Output vs. Junction Temperature, IF = 350mA 120 Relative Luminous Flux [%] 100 80 60 40 20 0 25 50 75 100 125 150 O Junction Temperature[ C] Fig 7. Junction Temp. vs. CIE X, Y Shift, IF = 350mA 0.02 CIE(X) CIE(Y) 0.01 0.00 -0.01 -0.02 25 50 75 100 125 150 O Junction Temperature [ C] Rev1.0, November 18, 2013 8 www.seoulsemicon.com Z5-P1 – High-Power LED Junction Temperature Characteristics Fig 8. Relative Forward vs. Junction Temperature, IF = 350mA 0.05 0.00 -0.05 V F -0.10 -0.15 -0.20 -0.25 -0.30 40 60 80 100 120 140 160 Junction Temperature [C] Rev1.0, November 18, 2013 9 www.seoulsemicon.com Z5-P1 – High-Power LED Ambient Temperature Characteristics Fig 9. Maximum Forward Current vs. Ambient Temperature, Tj(max.) = 150℃, IF =1.0A 1.2 Maximum Current [A] 1.0 0.8 0.6 Rth(j-a)=15℃/W Rth(j-a)=20℃/W 0.4 Rth(j-a)=25℃/W 0.2 0.0 0 20 40 60 80 100 120 140 O Ambient Temperature [ C] Rev1.0, November 18, 2013 10 www.seoulsemicon.com Z5-P1 – High-Power LED Color Bin Structure Table 5. Bin Code description (@IF=350mA, Tj=25℃) Color Chromaticity Coordinate Luminous Flux (lm) Part Number Typical Forward Voltage (VF) Bin Code Min. Max. G 2.75 3.00 H 3.00 3.25 160 I 3.25 3.50 118.5 130 G 2.75 3.00 V2 130 140 H 3.00 3.25 V3 140 150 W1 150 160 I 3.25 3.50 U3 109 118.5 G 2.75 3.00 V1 118.5 130 H 3.00 3.25 V2 130 140 V3 140 150 I 3.25 3.50 U2 100 109 G 2.75 3.00 U3 109 118.5 H 3.00 3.25 V1 118.5 130 V2 130 140 I 3.25 3.50 Bin Code Min. Max. V1 118.5 130 V2 130 140 V3 140 150 W1 150 V1 SZ5-P1-W0-00 Refer to page.12 SZ5-P1-WN-00 Refer to page.13 SZ5-P1-WN-C8 Refer to page.13 SZ5-P1-WW-C8 Refer to page.14 Rev1.0, November 18, 2013 11 www.seoulsemicon.com Z5-P1 – High-Power LED Color Bin Structure Table 6. Flux Bin Code description (@Tj=85℃) Luminous Flux (lm) 350mA* 700mA* Bin Code Min. Max. Min. Max. U2 90 98 159 173 U3 98 107 173 188 V1 107 118 188 207 V2 118 127 207 222 V3 127 136 222 238 W1 136 145 238 254 Table 7. VF Bin Code description (@Tj=85℃) Forward Voltage (VF) 350mA* 700mA* Bin Code Min. Max. Min. Max. G 2.61 2.85 2.79 3.05 H 2.85 3.09 3.05 3.30 I 3.09 3.32 3.30 3.55 * No values are provided by real measurement. Only for reference purpose. Rev1.0, November 18, 2013 12 www.seoulsemicon.com Z5-P1 – High-Power LED Color Bin Structure CIE Chromaticity Diagram (Cool white), Tj =25℃, IF = 350mA A0 CIE x 0.3028 0.3041 0.3126 0.3115 A1 CIE y 0.3304 0.3240 0.3324 0.3393 CIE x 0.3115 0.3126 0.3210 0.3205 CIE y 0.3256 0.3187 0.3261 0.3334 CIE x 0.3068 0.3082 0.3155 0.3146 CIE y 0.3462 0.3389 0.3461 0.3539 CIE x 0.3292 0.3293 0.3373 0.3376 CIE y 0.3384 0.3306 0.3369 0.3451 CIE x 0.3222 0.3226 0.3295 0.3294 CIE y 0.3616 0.3534 0.3601 0.3687 CIE x 0.3463 0.3456 0.3539 0.3552 CIE y 0.3514 0.3428 0.3487 0.3578 CIE x 0.3366 0.3364 0.3433 0.3440 A5 CIE x 0.3136 0.3146 0.3221 0.3216 CIE y 0.3539 0.3461 0.3534 0.3616 CIE x 0.3212 0.3217 0.3293 0.3293 CIE y 0.3243 0.3178 0.3234 0.3306 CIE x 0.3294 0.3295 0.3364 0.3366 CIE y 0.3687 0.3601 0.3669 0.3760 CIE x 0.3373 0.3369 0.3448 0.3456 CIE y 0.3369 0.3288 0.3345 0.3428 CIE x 0.3440 0.3433 0.3500 0.3514 CIE x 0.3126 0.3136 0.3216 0.3210 CIE y 0.3187 0.3120 0.3190 0.3261 CIE x 0.3082 0.3096 0.3164 0.3155 CIE y 0.3389 0.3316 0.3384 0.3461 CIE x 0.3293 0.3293 0.3369 0.3373 CIE y 0.3306 0.3234 0.3288 0.3369 CIE x 0.3200 0.3207 0.3292 0.3290 CIE y 0.3534 0.3451 0.3514 0.3601 CIE x 0.3456 0.3448 0.3526 0.3539 CIE y 0.3428 0.3345 0.3400 0.3487 CIE x 0.3381 0.3376 0.3463 0.3470 CIE x 0.3055 0.3068 0.3146 0.3136 CIE y 0.3046 0.2980 0.3046 0.3120 CIE x 0.3155 0.3164 0.3230 0.3225 CIE y 0.3461 0.3384 0.3451 0.3534 CIE x 0.3217 0.3222 0.3294 0.3293 CIE y 0.3572 0.3462 0.3539 0.3656 CIE x 0.3290 0.3292 0.3376 0.3381 CIE y 0.3601 0.3514 0.3578 0.3669 CIE x 0.3369 0.3366 0.3440 0.3448 CIE y 0.3740 0.3616 0.3687 0.3810 CIE x 0.3470 0.3463 0.3552 0.3572 CIE y 0.3316 0.3243 0.3306 0.3384 B9 C3 C7 CIE y 0.3120 0.3046 0.3110 0.3190 B4 B8 C2 CIE y 0.3177 0.3113 0.3187 0.3256 A9 B3 B7 13 A4 CIE y 0.3324 0.3256 0.3334 0.3408 A8 B2 C6 Rev1.0, November 18, 2013 A3 CIE y 0.3240 0.3177 0.3256 0.3324 A7 C1 C5 CIE x 0.3448 0.3440 0.3514 0.3526 CIE x 0.3146 0.3155 0.3225 0.3221 B6 C0 CIE x 0.3376 0.3373 0.3456 0.3463 CIE y 0.3113 0.3046 0.3120 0.3187 B1 B5 CIE x 0.3293 0.3294 0.3366 0.3369 CIE x 0.3041 0.3055 0.3136 0.3126 A6 B0 CIE x 0.3207 0.3212 0.3293 0.3292 A2 CIE y 0.3393 0.3324 0.3408 0.3481 CIE y 0.3656 0.3539 0.3616 0.3740 C4 C8 CIE y 0.3451 0.3369 0.3428 0.3514 C9 CIE y 0.3810 0.3687 0.3760 0.3891 www.seoulsemicon.com Z5-P1 – High-Power LED Color Bin Structure CIE Chromaticity Diagram (Neutral white), Tj =25℃, IF = 350mA D0 CIE x 0.3548 0.3536 0.3625 0.3641 D1 CIE y 0.3736 0.3646 0.3711 0.3804 CIE x 0.3641 0.3625 0.3714 0.3736 CIE y 0.3616 0.3521 0.3578 0.3677 CIE x 0.3512 0.3497 0.3575 0.3590 CIE y 0.3874 0.3775 0.3855 0.3958 CIE x 0.3869 0.3842 0.3970 0.4006 CIE y 0.3751 0.3646 0.3716 0.3825 CIE x 0.3670 0.3650 0.3758 0.3783 D5 CIE x 0.3608 0.3590 0.3670 0.3692 CIE y 0.3465 0.3385 0.3441 0.3521 CIE x 0.3590 0.3575 0.3650 0.3670 CIE y 0.3958 0.3855 0.3935 0.4044 CIE x 0.3714 0.3692 0.3813 0.3842 CIE y 0.3578 0.3489 0.3550 0.3646 CIE x 0.3783 0.3758 0.3863 0.3898 CIE x 0.3625 0.3608 0.3692 0.3714 CIE y 0.3521 0.3441 0.3489 0.3578 CIE x 0.3562 0.3548 0.3641 0.3661 CIE y 0.3775 0.3677 0.3751 0.3855 CIE x 0.3842 0.3813 0.3934 0.3970 CIE y 0.3646 0.3550 0.3610 0.3716 CIE x 0.3760 0.3736 0.3869 0.3902 CIE x 0.3524 0.3512 0.3590 0.3608 CIE y 0.3826 0.3736 0.3804 0.3900 CIE x 0.3661 0.3641 0.3736 0.3760 CIE y 0.3855 0.3751 0.3825 0.3935 CIE x 0.3692 0.3670 0.3783 0.3813 CIE y 0.3974 0.3874 0.3958 0.4067 CIE x 0.3902 0.3869 0.4006 0.4044 CIE y 0.3555 0.3465 0.3521 0.3616 D9 E3 E7 14 D4 CIE y 0.3711 0.3616 0.3677 0.3775 D8 E2 E6 Rev1.0, November 18, 2013 D3 CIE y 0.3646 0.3555 0.3616 0.3711 D7 E1 E5 CIE x 0.3813 0.3783 0.3898 0.3934 CIE x 0.3536 0.3524 0.3608 0.3625 D6 E0 CIE x 0.3736 0.3714 0.3842 0.3869 D2 CIE y 0.3804 0.3711 0.3775 0.3874 CIE y 0.3900 0.3804 0.3874 0.3974 E4 E8 CIE y 0.3677 0.3578 0.3646 0.3751 E9 CIE y 0.4067 0.3958 0.4044 0.4160 www.seoulsemicon.com Z5-P1 – High-Power LED Color Bin Structure CIE Chromaticity Diagram (Warm white), Tj =25℃, IF = 350mA F0 CIE x 0.3996 0.396 0.4104 0.4146 F1 CIE y 0.4015 0.3907 0.3978 0.4089 CIE x 0.4146 0.4104 0.4248 0.4299 CIE y 0.3865 0.3751 0.3814 0.3931 CIE x 0.4299 0.4261 0.4324 0.4365 CIE y 0.4189 0.4100 0.4122 0.4212 CIE x 0.4324 0.4284 0.4345 0.4387 CIE y 0.4122 0.4033 0.4055 0.4145 CIE x 0.4345 0.4302 0.4361 0.4406 CIE y 0.4055 0.3964 0.3985 0.4077 CIE x 0.4361 0.4316 0.4373 0.4420 CIE y 0.3998 0.3906 0.3893 0.3985 CIE x 0.4687 0.4636 0.4575 0.4625 CIE y 0.4304 0.4211 0.4197 0.4289 CIE x 0.4697 0.4644 0.4585 0.4636 CIE y 0.4225 0.4132 0.4118 0.4211 CIE x 0.4703 0.4648 0.4591 0.4644 F5 CIE x 0.4062 0.4017 0.4147 0.4198 CIE y 0.4033 0.3943 0.3964 0.4055 CIE x 0.4302 0.4259 0.4316 0.4361 CIE y 0.3964 0.3873 0.3893 0.3985 CIE x 0.4625 0.4575 0.4515 0.4562 CIE y 0.4289 0.4197 0.4182 0.4275 CIE x 0.4636 0.4585 0.4526 0.4575 CIE y 0.4211 0.4118 0.4104 0.4197 CIE x 0.4644 0.4591 0.4534 0.4585 CIE y 0.4132 0.4038 0.4025 0.4188 CIE x 0.4648 0.4593 0.4538 0.4591 CIE y 0.4077 0.3990 0.4011 0.4100 CIE x 0.4223 0.4185 0.4243 0.4284 CIE y 0.4011 0.3922 0.3943 0.4033 CIE x 0.4243 0.4203 0.4259 0.4302 CIE y 0.3943 0.3853 0.3873 0.3964 CIE x 0.4496 0.4451 0.4515 0.4562 CIE y 0.4275 0.4182 0.4168 0.4260 CIE x 0.4575 0.4526 0.4468 0.4515 CIE y 0.4197 0.4104 0.4090 0.4182 CIE x 0.4585 0.4534 0.4477 0.4526 CIE y 0.4118 0.4025 0.4012 0.4104 CIE x 0.4591 0.4538 0.4483 0.4534 F4 CIE y 0.3978 0.3865 0.3931 0.4048 CIE x 0.3925 0.3889 0.4017 0.4062 CIE y 0.3990 0.3902 0.3922 0.4011 CIE x 0.4185 0.4147 0.4203 0.4243 CIE y 0.3922 0.3834 0.3853 0.3943 CIE x 0.4430 0.4387 0.4451 0.4496 CIE y 0.4236 0.4145 0.4168 0.4260 CIE x 0.4451 0.4406 0.4468 0.4515 CIE y 0.4182 0.4090 0.4077 0.4168 CIE x 0.4526 0.4477 0.4420 0.4468 CIE y 0.4104 0.4012 0.3998 0.4090 CIE x 0.4534 0.4483 0.4428 0.4477 CIE y 0.4025 0.3932 0.3919 0.4012 CIE x 0.4810 0.4758 0.4697 0.4750 G13 CIE y 0.4145 0.4055 0.4077 0.4168 H13 H23 H33 CIE y 0.4212 0.4122 0.4145 0.4236 G42 H12 H22 CIE y 0.3902 0.3814 0.3834 0.3922 G31 G41 H11 CIE y 0.3798 0.369 0.3751 0.3865 G14 G24 G34 H43 Rev1.0, November 18, 2013 CIE x 0.4104 0.4062 0.4198 0.4248 G23 H32 H42 CIE x 0.4758 0.4703 0.4644 0.4697 CIE x 0.4284 0.4243 0.4302 0.4345 H21 H31 CIE x 0.4750 0.4697 0.4636 0.4687 CIE y 0.4100 0.4011 0.4033 0.4122 F3 CIE y 0.3907 0.3798 0.3865 0.3978 G12 G44 H14 CIE x 0.4477 0.4428 0.4373 0.4420 CIE x 0.4261 0.4223 0.4284 0.4324 G33 G43 CIE x 0.4406 0.4361 0.4420 0.4468 CIE y 0.4165 0.4077 0.4100 0.4189 G22 G32 CIE x 0.4387 0.4345 0.4406 0.4451 CIE x 0.396 0.3925 0.4062 0.4104 G11 G21 CIE x 0.4365 0.4324 0.4387 0.4430 F2 CIE y 0.4089 0.3978 0.4048 0.4165 CIE y 0.4090 0.3998 0.3985 0.4077 H24 H34 CIE y 0.4012 0.3919 0.3906 0.3998 H41 CIE y 0.4319 0.4225 0.4211 0.4304 H44 CIE y 0.4038 0.3944 0.3932 0.4025 15 www.seoulsemicon.com Z5-P1 – High-Power LED Mechanical Dimensions Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.1mm Rev1.0, November 18, 2013 16 www.seoulsemicon.com Z5-P1 – High-Power LED Emitter Tape & Reel Packaging Rev1.0, November 18, 2013 17 www.seoulsemicon.com Z5-P1 – High-Power LED Product Nomenclature RANK : Z1Z1Z2Z2Z3 QUANTITY : 1000 LOT NUMBER : Y Y Y Y Y Y Y Y Y Y 1 1 2 3 3 4 5 5 5 5 - Y6Y6Y6 - Y7Y7Y7 - Y8Y8Y8Y8Y8Y8Y8 SSC PART NUMBER : X1X2X3-X4X5-X6X7-X8X9 Table 8. Part Numbering System : X1X2X3 - X4X5 - X6X7 - X8X9 Part Number Code Description Part Number X1 Company S X2 Z-Power LED series number Z X3 PKG series 5 X4 PKG series P P series X5 Revision number 1 New version X6 X7 Color Specification W0 Pure white WN Neutral white WW Warm white C8 CRI (min.) 80 C9 CRI (min.) 90 00 The others X8 X9 Color Specification Value Table 9. Lot Numbering System : Y1Y1Y2Y3Y3Y4Y5Y5Y5Y5 - Y6Y6Y6 - Y7Y7Y7 - Y8Y8Y8Y8Y8Y8Y8 Lot Number Code Description Y1 Year Y2 Month Y3 Day Y4 Production area Y5 Mass order Y6 Taping number Y7 Reel number Y8 Internal management number [1] Z1: Flux rank Z2: Chromaticity Rev1.0, November 18, 2013 Z3: VF rank 18 www.seoulsemicon.com Z5-P1 – High-Power LED Recommended Solder Pad Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) This drawing without tolerances are for reference only. (4) Undefined tolerance is ±0.1mm. Rev1.0, November 18, 2013 19 www.seoulsemicon.com Z5-P1 – High-Power LED Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Table 10. Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) (ts) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time within 5°C of actual Peak Temperature (tp)2 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev1.0, November 18, 2013 20 www.seoulsemicon.com Z5-P1 – High-Power LED Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this product with acid or sulfur material in sealed space. (7) Avoid leaving fingerprints on silicone resin parts. Rev1.0, November 18, 2013 21 www.seoulsemicon.com Z5-P1 – High-Power LED Precaution for Use (1) Storage To avoid the moisture penetration, we recommend storing Z5 Series LEDs in a dry box with a desiccant . The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMD techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing / Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 1 year (MSL 2) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more after being shipped from Seoul Semiconductor. A sealed container with a nitrogen atmosphere should be used for storage. (11) The appearance and specifications of the product may be modified for improvement without notice. (12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. Rev1.0, November 18, 2013 22 www.seoulsemicon.com Z5-P1 – High-Power LED Precaution for Use (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures ca n penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. T he result can be a significant loss of light output from the fixture. Knowledge of the properties of the m aterials selected to be used in the construction of fixtures can help prevent these issues. (14) The slug is electrically isolated. (15) Attaching LEDs, do not use adhesives that outgas organic vapor. (16) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the rev erse voltage is applied to LED, migration can be generated resulting in LED damage. (17) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev1.0, November 18, 2013 23 www.seoulsemicon.com Z5-P1 – High-Power LED Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev1.0, November 18, 2013 24 www.seoulsemicon.com Z5-P1 – High-Power LED Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev1.0, November 18, 2013 25 www.seoulsemicon.com