CYStech Electronics Corp. Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2014.04.15 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA1514N3 BVCEO IC VCESAT(MAX) -160V -0.6A -0.3V Description • The BTA1514N3 is designed for general purpose application requiring high breakdown voltage. • Large IC , IC( Max) = -0.6A • High BVCEO, BVCEO= -160V • Complementary to BTC3906N3. • Pb-free lead plating and halogen-free package Symbol Outline BTA1514N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTA1514N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTA1514N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2014.04.15 Page No. : 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient ESD susceptibility Operating Junction and Storage Temperature Range VCBO VCEO VEBO IC PD RθJA Tj ; Tstg Limits -180 -160 -5 -0.6 225 556 8000 (Note ) -55~+150 Unit V V V A mW °C/W V °C Note : Human body model, 1.5kΩ in series with 100pF Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 hFE 3 hFE 4 fT Cob Min. -180 -160 -5 100 100 50 120 100 - Typ. 0.11 0.25 - Max. -50 -50 -0.16 -0.3 -1 -1 390 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=-50μA IC=-1mA IE=-50μA VCB=-120V VEB=-4V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-6V, IC=-2mA VCE=-30V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 4 Rank Q R Range 120~270 180~390 BTA1514N3 CYStek Product Specification Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2014.04.15 Page No. : 3/6 CYStech Electronics Corp. Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 Saturation Voltage---(mV) HFE Current Gain---HFE VCE =6V 100 VCE =5V 10 VCE =1V VCE(SAT) @IC=10IB 1000 100 1 0.1 Collector Current---IC(mA) 10 100 Collector Current---I C(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 1 10 100 1 1000 1000 Cutoff Frequency---fT (MHZ) Saturation Voltage---(mV) 1000 VBE(SAT) @IC=10IB fT @VCE =10V 100 10 100 1 10 100 0.1 1000 1 10 100 Collector Current---IC(mA) Collector Current---I C(mA) Capacitance Characteristics Power Derating Curve 100 Power Dissipation---PD(mW) 250 Cib Capacitance---(pF) 1000 10 Cob fT =1MHz 200 150 100 50 0 1 0.1 BTA1514N3 1 10 Reverse Biased Voltage---VCB, VEB(V) 100 0 50 100 150 200 Ambient Temperature --- TA(℃ ) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2014.04.15 Page No. : 4/6 Reel Dimension Carrier Tape Dimension BTA1514N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2014.04.15 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTA1514N3 CYStek Product Specification Spec. No. : C307N3 Issued Date : 2003.06.27 Revised Date : 2014.04.15 Page No. : 6/6 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code 2L Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1514N3 CYStek Product Specification