CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 BVCEO IC VCESAT(TYP) Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2014.06.27 Page No. : 1/7 400V 0.3A 0.1V Features • High breakdown voltage. (BVCEO =400V) • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA. • Complementary to BTA1759N3 • Pb-free lead plating and halogen-free package Symbol Outline BTC4505N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTC4505N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTC4505N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2014.06.27 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC Pd Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Limit 400 400 6 300 0.225 150 -55~+150 Unit V V V mA W °C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 185 556 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO ICER IEBO *VCE(sat) *VBE(sat) hFE fT Cob Min. 400 400 6 100 - Typ. 0.1 20 7 Max. 100 10 100 0.5 1.5 270 - Unit V V V nA nA nA V V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=400V, IE=0 VCE=300V, REB=4kΩ VEB=6V,IC=0 IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=10mA VCE=10V, IC=10mA, f=10MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% BTC4505N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2014.06.27 Page No. : 3/7 Characteristic Curves Saturation Voltage vs Collector Current Current Gain vs Collector Current 10000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 VCE = 10V VCE = 5V 10 VCE = 1V 1000 VCE(SAT) @ IC = 20IB 100 VCE(SAT) @ IC = 10IB 10 1 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current Power Derating Curve 250 Power Dissipation---PD(mW) Saturation Voltage---(mV) 1000 VBE(SAT) @ IC =10IB 100 200 150 100 50 0 1 10 100 Collector Current---IC(mA) BTC4505N3 1000 0 50 100 150 200 Ambient Temperature---TA(℃) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2014.06.27 Page No. : 4/7 Reel Dimension Carrier Tape Dimension BTC4505N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2014.06.27 Page No. : 5/7 Recommended Soldering Footprint BTC4505N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2014.06.27 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC4505N3 CYStek Product Specification Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2014.06.27 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code 3D Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated.. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC4505N3 CYStek Product Specification