CYStech Electronics Corp. Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2014.12.03 Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BC807N3 Description • The BC807N3 is designed for general purpose switching and amplification applications. It is housed in the SOT-23/SC-59 package which is designed for low power surface mount applications. • Low VCE(sat) • High switching speed. • Complementary to BC817N3 • Pb-free lead-free and halogen-free package Symbol Outline BC807N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BC807N3-XX-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BC807N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2014.12.03 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation @TA=25℃ Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -50 -45 -5 -500 225 (Note 1) 556 (Note 1) 150 -55~+150 Unit V V V mA mW °C/W °C °C Note 1:When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in. Characteristics (Ta=25°C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE 1 *hFE fT Cob Min. -50 -45 -5 100 40 80 - Typ. -0.5 9 Max. -100 -100 -0.7 -1.2 600 - Unit V V V nA nA V V MHz pF Test Conditions IC=-10μA IC=-10mA IE=-10μA VCB=-20V VEB=-5V IC=-500mA, IB=-50mA VCE=-1V, IC=-500mA VCE=-1V, IC=-100mA VCE=-1V, IC=-500mA VCE=-5V, IC=-10mA, f=100MHz VCB=-10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification of hFE 1: Rank 16 25 40 Range 100--250 160--400 250--600 BC807N3 CYStek Product Specification Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2014.12.03 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCE(SAT)@IC=10IB Saturation Voltage---(mV) Current Gain---HFE HFE@VCE=10V 100 10 100 10 0.1 1 10 100 1000 0.1 Collector Current---IC(mA) 10 100 1000 Collector Current---IC(mA) Saturation Voltage vs Collector Current Cutoff Frequency vs Collector Current 10000 1000 VBE(SAT)@IC=10IB VCE=20V Cutoff Frequency---fT(MHz) Saturation Voltage---(mV) 1 1000 100 100 0.1 1 10 100 1000 Collector Current---IC(mA) 1 10 Collector Current---IC(mA) 100 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 BC807N3 50 100 150 Ambient Temperature---TA(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2014.12.03 Page No. : 4/7 Recommended Soldering Footprint BC807N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2014.12.03 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BC807N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2014.12.03 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BC807N3 CYStek Product Specification Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2014.12.03 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Device Code 9F Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead :Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BC807N3 CYStek Product Specification