MTA17A02CDV8

CYStech Electronics Corp.
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 1/9
Common Drain Dual N -Channel Enhancement Mode MOSFET
MTA17A02CDV8
BVDSS
ID
RDSON (TYP.)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• ESD protected
• Pb-free lead plating and halogen-free package
Equivalent Circuit
VGS=4.5V
VGS=4.5V, ID=6A
VGS=4.0V, ID=6A
VGS=3.0V, ID=6A
VGS=2.5V, ID=6A
20V
6.6A
19.5mΩ
20.0mΩ
21.7 mΩ
23.4 mΩ
Outline
DFN3×3
MTA17A02CDV8
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
MTA17A02CDV8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTA17A02CDV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=4.5V, TC=25°C
Continuous Drain Current @ VGS=4.5V, TC=100°C
Continuous Drain Current @ VGS=4.5V, TA=25°C
Continuous Drain Current @ VGS=4.5V, TA=70°C
Pulsed Drain Current
TA=25℃
Total Power Dissipation
TA=70℃
VDS
VGS
Operating Junction and Storage Temperature Range
Limits
Unit
Tj, Tstg
20
±12
16.5
10.4
6.6
5.3
40 *1, 2
2.5 *3
1.6 *3
-55~+150
°C
Symbol
Rth,j-c
Rth,j-a
Value
8
50 *3
Unit
°C/W
°C/W
ID
IDM
PD
V
A
W
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by the customer’s PCB characteristics.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
MTA17A02CDV8
Min.
Typ.
Max.
Unit
Test Conditions
20
0.5
-
0.02
0.63
19.5
20.0
21.7
23.4
15
1.0
±10
1
10
26
27
30
32
-
V
V/°C
V
S
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS=VGS, ID=250μA
VGS=±10V, VDS=0V
VDS=20V, VGS=0V
VDS=16V, VGS=0V, Tj=70°C
ID=6A, VGS=4.5V
ID=6A, VGS=4V
ID=6A, VGS=3V
ID=6A, VGS=2.5V
VDS=5V, ID=6A
-
365
75
30
-
pF
VDS=10V, VGS=0, f=1MHz
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Source-Drain Diode
*IS
*ISM
*VSD
-
260
670
3850
1800
6.4
1.4
1.5
-
0.73
3
5
1.2
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 3/9
ns
VDS=10V, ID=1A, VGS=4.5V, RG=6Ω
nC
VDS=16V, ID=6A, VGS=4.5V
A
V
IS=3A,VGS=0V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
unit : mm
MTA17A02CDV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
BVDSS, Normalized Drain-Source
Breakdown Voltage
40
ID, Drain Current (A)
5V,4.5V,4V,3.5V,3V,2.5V
30
VGS=2V
20
10
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
VGS=1.5V
0.4
0
0
1
2
3
-75 -50 -25
5
4
VDS, Drain-Source Voltage(V)
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
RDS(on) , Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=1.5V
100
1.8V
2.5V
3V
4V
10V
10
VGS=0V
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
1
0.01
0.1
1
ID, Drain Current(A)
10
0
100
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(on), Normalized Static DrainSource On-State Resistance
100
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=6A
80
60
40
20
1.8
VGS=4.5V, ID=6A
1.6
1.4
1.2
1
0.8
RDSON @ Tj=25°C : 19.5 mΩ typ
0.6
0.4
0
0
MTA17A02CDV8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
1000
Ciss
100
C oss
Crss
1.4
1.2
1
ID=1mA
0.8
0.6
ID=250μA
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-75 -50 -25
100
50
75 100 125 150 175
Gate Charge Characteristics
100
5
VDS=16V
ID=6A
VDS=5V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
25
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
VDS=10V
0.1
Ta=25°C
Pulsed
0.01
0.001
4
3
2
1
0
0.01
0.1
1
ID, Drain Current(A)
0
10
1
2
3
4
5
6
Qg, Total Gate Charge(nC)
7
8
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
8
RDSON
Limited
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
0
100μs
10
1ms
10ms
100ms
1
1s
TA=25°C, Tj=150°C
VGS=4.5V, RθJA=50°C/W
Single Pulse
0.1
DC
7
6
5
4
3
2
TA=25°C, VGS=4.5V, RθJA=50°C/W
1
0
0.01
0.1
MTA17A02CDV8
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 6/9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
40
50
VDS=5V
35
TJ(MAX) =150°C
TA=25°C
θJA=50°C/W
40
30
25
Power (W)
ID, Drain Current(A)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
20
15
10
30
20
10
5
0
0
1
2
3
4
VGS, Gate-Source Voltage(V)
5
0
0.001
0.01
0.1
1
10
Pulse Width(s)
100
1000
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTA17A02CDV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTA17A02CDV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA17A02CDV8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C930V8
Issued Date : 2014.05.09
Revised Date :
Page No. : 9/9
DFN3×3 Dimension
Marking :
D
D
D
D
A17A
02CD
Date Code
S1 G1 S2 G2
8-Lead DFN3×3 Plastic Package
CYStek Package Code: V8
*: Typical
Millimeters
Min.
Max.
0.650
0.850
0.152 REF
0.000
0.050
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
DIM
A
A1
A2
D
D1
E
E1
E2
Inches
Min.
Max.
0.026
0.033
0.006 REF
0.000
0.002
0.114
0.122
0.091
0.102
0.114
0.122
0.124
0.136
0.060
0.076
DIM
b
e
L
L1
L2
L3
H
θ
Millimeters
Min.
Max.
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0.000
0.100
0.000
0.100
0.315
0.515
9°
13°
Inches
Min.
Max.
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0.000
0.004
0.000
0.004
0.012
0.020
9°
13°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA17A02CDV8
CYStek Product Specification