MTN2N65I3

Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 1/11
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS : 650V
RDSON(typ): 6.2Ω
MTN2N65I3
ID : 1.8A
Description
The MTN2N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications.
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Open Framed Power Supply
• Adapter
• STB
Symbol
Outline
MTN2N65I3
G：Gate
D：Drain
S：Source
MTN2N65I3
TO-251AB
G
D S
TO-251AA
G
D S
CYStek Product Specification
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 2/11
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current @TC=100°C
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TA=25℃)
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
ID
ID
IDM
EAS
IAR
EAR
dv/dt
650
±30
1.8
1.08
7.2
8.8
1.8
4.4
4.5
V
V
A
A
A
mJ
A
mJ
V/ns
TL
300
°C
1.14
44
0.35
-55~+150
W
W
W/°C
°C
PD
Tj, Tstg
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=1.8A, VDD=50V, L=5mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤1.8A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN2N65I3
Symbol
Rth,j-c
Rth,j-a
Value
2.87
110
Unit
°C/W
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 3/11
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
650
2.0
-
0.6
1
6.2
4.0
±100
1
10
7
V
V/°C
V
S
nA
μA
μA
Ω
VGS=0, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=0.9A
VGS=±30
VDS =650V, VGS =0
VDS =520V, VGS =0, TC=125°C
VGS =10V, ID=0.9A
8.5
2
4
15
40
40
30
260
25
5.5
11
30
80
80
60
340
33
7
nC
ID=1.8A, VDD=520V, VGS=10V
ns
VDD=325V, ID=1.8A, VGS=10V,
RG=25Ω, RD=180Ω
pF
VGS=0V, VDS=25V, f=1MHz
220
1.1
1.5
1.8
7.2
-
V
IS=1.8A, VGS=0V
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
A
ns
μC
VGS=0, IF=1.8A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MTN2N65I3
MTN2N65I3
MTN2N65I3
Package
TO-251AB
(RoHS compliant)
TO-251AA
(RoHS compliant)
Shipping
Marking
80 pcs / tube, 50 tubes / box
2N65
80 pcs / tube, 50 tubes / box
2N65
CYStek Product Specification
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 4/11
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
15
3
15V
10V
9V
7V
2
Static Drain-Source On-state
Resistance-RDS(on)(Ω)
Drain Current - ID(A)
4
6V
5.5V
1
13
11
9
7
ID=0.9A,
VGS=10V
5
5V
VGS=4.5V
3
-100
0
0
10
20
30
40
Drain-Source Voltage -VDS(V)
50
60
150
2
15
Ta=25°C
VDS=10V
VGS=10V
Drain Current-ID(on)(A)
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
0
50
100
Ambient Temperature-Ta(°C)
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
10
1.5
1
0.5
0
5
0.1
1
Drain Current-ID(A)
0
10
5
10
15
Gate-Source Voltage-VGS(V)
20
Forward Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
20
Ta=25°C
VGS=0V
Forward Current-IF(A)
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
-50
15
10
ID=0.9A
10
Ta=150°C
1
Ta=25°C
0.1
5
0
MTN2N65I3
2
4
6
8
10
Gate-Source Voltage-VGS(V)
12
0
0.2
0.4
0.6
0.8
1
1.2
1.4
Source Drain Voltage -VSD(V)
CYStek Product Specification
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 5/11
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Brekdown Voltage vs Ambient Temperature
Capacitance vs Reverse Voltage
1000
Drain-Source Breakdown Voltage
BVDSS(V)
850
Capacitance-(pF)
Ciss
100
Coss
10
Crss
800
750
700
650
ID=250μA,
VGS=0V
f=1MHz
1
0
5
10
15
20
25
Drain-to-Source Voltage-VDS(V)
600
-100
30
-50
50
100
150
200
Gate Charge Characteristics
Maximum Safe Operating Area
10
12
10μs
100μs
1ms
10ms
1
100m
Operation in this area is
limited by RDS(ON)
0.1
VDS=130V
Gate-Source Voltage---VGS(V)
Drain Current --- ID(A)
0
Ambient Temperature-Tj(°C)
DC
10
VDS=325V
8
VDS=520V
6
4
2
ID=1.8A
0
0.01
1
10
100
Drain-Source Voltage -VDS(V)
1000
0
2
4
6
8
10
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Maximum Drain Current---ID(A)
2.5
2
1.5
1
0.5
0
25
50
75
100
125
150
175
Case Temperature---TC(°C)
MTN2N65I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 6/11
Typical Characteristics(Cont.)
Transient Thermal Response Curves
10
ZθJC(t), Thermal Response
D=0.5
1
1.ZθJC(t)=2.87 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN2N65I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 7/11
Test Circuits and Waveforms
MTN2N65I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 8/11
Test Circuits and Waveforms(Cont.)
MTN2N65I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 9/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN2N65I3
CYStek Product Specification
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 10/11
CYStech Electronics Corp.
TO-251AB Dimension
Marking:
Product
Name
Date
Code
CYS
2N65
□□□□
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Inches
Min.
Max.
0.2500
0.2618
0.2047
0.2126
0.5709
0.5866
0.0276
0.0354
0.0199
0.0276
0.0886
0.0925
0.0886
0.0925
0.0169
0.0228
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
6.35
6.65
5.20
5.40
14.50
14.90
0.70
0.90
0.50
0.70
2.25
2.35
2.25
2.35
0.43
0.58
DIM
I
J
K
L
M
N
S
T
Inches
Min.
Max.
0.0866
0.0945
0.2126
0.2244
0.2992
0.3071
0.0453
0.0492
0.0169
0.0228
0.1181 REF
0.1969 REF
0.1496 REF
Millimeters
Min.
Max.
2.20
2.40
5.40
5.70
7.60
7.80
1.15
1.25
0.43
0.58
3.00 REF
5.00 REF
3.80 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
MTN2N65I3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C722I3
Issued Date : 2009.08.14
Revised Date : 2011.11.10
Page No. : 11/11
TO-251AA Dimension
Marking :
Device Name
Date Code
3-Lead TO-251AA Plastic Package
CYStek Package Code: I3
Style : Pin 1. Gate 2. Drain
3. Source
*: Typical
Inches
Min.
Max.
0.2559
0.2638
0.2020
0.2126
0.4094
0.4331
0.0280
0.0319
0.0858
0.0941
0.0858
0.0941
0.0181
0.0220
0.0902
0.0937
DIM
A
B
C
E
F
G
H
I
Millimeters
Min.
Max.
6.50
6.70
5.13
5.46
10.40
11.00
0.71
0.81
2.18
2.39
2.18
2.39
0.46
0.56
2.29
2.38
DIM
J
K
L
M
S
T
U
V
Inches
Min.
Max.
0.2362
0.2441
0.1299
0.1457
0.0358
0.0437
0.0181
0.0220
0.1902 REF
0.2106 REF
0.0701 REF
0.0299 REF
Millimeters
Min.
Max.
6.00
6.20
3.30
3.70
0.91
1.11
0.46
0.56
4.83 REF
5.35 REF
1.78 REF
0.76 REF
Notes: 1.Controlling dimension: inch.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN2N65I3
CYStek Product Specification