CYStech Electronics Corp. Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BCP56L3 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features • High collector current and low VCE(SAT) • Complement to BCP53L3 • Pb-free package Symbol Outline BCP56L3 SOT-223 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation @TC=25℃ Operating Junction Temperature Range Storage Temperature Range BCP56L3 Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 100 80 5 1 1.5 2 -55~+150 -55~+150 Unit V V V A A W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 fT Cob Min. 100 80 5 100 100 45 - Typ. 0.15 125 - Max. 100 100 0.3 0.6 1.2 1.0 400 10 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=10mA IE=10μA VCB=80V VEB=5V IC=500mA, IB=50mA IC=1A, IB=50mA IC=1A, IB=50mA VCE=2V, IC=500mA VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 2 Rank Range -16 100~250 -25 160~400 Ordering Information Device BCP56L3 BCP56L3 Package SOT-223 (Pb-free) Shipping Marking 2500 pcs / Tape & Reel AJ CYStek Product Specification Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT VCE=5V Saturation Voltage-(mV) Current Gain---HFE HFE 100 VCE=2V VCE=1V 10 IC=25IB 100 IC=10IB 10 1 10 100 Collector Current ---IC(mA) 1000 1 Saturation Voltage vs Collector Current 1000 10000 VBESAT@IC=10IB VBEON@VCE=2V On Voltage-(mV) Saturation Voltage-(mV) 10 100 Collector Current ---IC(mA) On Voltage vs Collector Current 10000 1000 1000 100 100 1 10 100 1000 10000 1 Collector Current--- IC(mA) Typical Cutoff Current Characteristics 10 100 1000 Collector Current--- IC(mA) 10000 Transition Frequency vs Collector Current 1000 1000 Tj=150°C Transition Frequency---fT(MHz) C-B Cutoff Current---ICBO(nA) IC=20IB 100 10 100 10 0 BCP56L3 20 40 60 80 Collector Base Voltage-- VCB(V) 100 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 4/7 Typical Characteristics(Cont.) Power Derating Curve Power Dissipation---PD(W) 2.5 2 1.5 1 0.5 0 0 BCP56L3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BCP56L3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BCP56L3 CYStek Product Specification Spec. No. : C304L3 Issued Date : 2007.05.04 Revised Date :2012.02.22 Page No. : 7/7 CYStech Electronics Corp. SOT-223 Dimension A Marking: B Device Code C 1 2 Date Code 3 D E AJ □□ Style: Pin 1.Base 2.Collector 3.Emitter F H G a1 I a2 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BCP56L3 CYStek Product Specification