CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD882I3 BVCEO IC RCESAT Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 1/6 30V 3A 125mΩ typ. Features • Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A • Excellent current gain characteristics • Complementary to BTB772I3 • RoHS compliant package Symbol Outline BTD882I3 TO-251 B：Base C：Collector E：Emitter B CC E B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%. BTD882I3 Symbol Limit Unit VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg 40 30 5 3 7 1 10 150 -55~+150 V V V A A *1 W °C °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 2/6 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. 40 30 5 150 180 - Typ. 0.25 90 45 Max. 1 1 0.5 2 560 - Unit V V V μA μA V V MHz pF Test Conditions IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=30V, IE=0 VEB=3V, IC=0 IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=2V, IC=20mA VCE=2V, IC=1A VCE=5V, IC=0.1A, f=100MHz VCB=10V, f=1MHz *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE 2 Rank P E Range 180~390 270~560 Ordering Information Device BTD882I3 BTD882I3 Package TO-251 (RoHS compliant) Shipping Marking 80 pcs / tube, 50 tubes/box, 10 boxes/carton D882 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 3/6 Characteristic Curves Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.25 1 0.2 IB=400uA 0.15 IB=300uA IB=200uA 0.1 IB=100uA 0.05 0.9 0.8 Collector Current---IC(A) Collector Current---IC(A) IB=500uA IB=2.5mA IB=2mA 0.7 0.6 IB=1.5mA 0.5 IB=1mA 0.4 0.3 IB=500uA 0.2 0.1 IB=0 IB=0 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 0 6 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 3 4.5 IB=10mA 2.5 IB=8mA IB=6mA 2 IB=25mA 4 Collector Current---IC(A) Collector Current---IC(A) 6 IB=4mA 1.5 IB=2mA 1 0.5 IB=20mA 3.5 IB=15mA 3 IB=10mA 2.5 2 IB=5mA 1.5 1 0.5 IB=0 0 IB=0 0 0 1 2 3 4 5 6 0 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 Saturation Voltage vs Collector Current 1000 10000 Saturation Voltage---(mV) Current Gain---HFE VCE=5V VCE=2V 100 VCE=1V VCE(SAT) 1000 IC=100IB IC=50IB 100 IC=20IB 10 10 1 BTD882I3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 4/6 Characteristic Curves(Cont.) Saturation Voltage vs Collector Current Capacitance vs Reverse-Biased Voltage 1000 VBE(SAT)@IC=10IB Capacitance---(pF) Saturation Voltage---(mV) 10000 1000 Cib 100 Cob 100 10 1 10 100 1000 Collector Current---IC(mA) 10000 0.1 1 10 Reverse-Biased Voltage---(V) Power Derating Curve 1.2 12 1 10 Power Dissipation---PD(W) Power Dissipation---PD(W) Power Derating Curve 0.8 0.6 0.4 8 6 4 0.2 2 0 0 0 BTD882I3 25 50 75 100 125 150 Ambient Temperature---TA(℃) 100 175 200 0 25 50 75 100 125 150 Case Temperature---TC(℃) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD882I3 CYStek Product Specification Spec. No. : C848I3-H Issued Date : 2003.04.02 Revised Date : 2009.02.04 Page No. : 6/6 CYStech Electronics Corp. TO-251 Dimension A B C Marking: D F G 3 K E Device Name D882 □□ Date Code I H 2 1 Style: Pin 1.Base 2.Collector 3.Emitter J 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2441 0.2677 0.2677 0.2835 DIM A B C D E F Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.20 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0449 0.0346 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 1.14 0.88 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD882I3 CYStek Product Specification