MTN4N65F3

Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 1/ 9
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS : 650V
RDS(ON) : 3Ω (typ.)
MTN4N65F3
ID : 4A
Features
• Low On Resistance
• Simple Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
Applications
• Adapter
• Switching Mode Power Supply
Symbol
Outline
TO-263
MTN4N65F3
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
MTN4N65F3-0-T7-X
Package
Shipping
TO-263
(Pb-free lead plating and RoHS compliant package)
800 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4N65F3
CYStek Product Specification
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 2/ 9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C, VGS=10V
Continuous Drain Current @TC=100°C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm)
from case for 10 seconds
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
VDS
VGS
IDM
EAS
IAR
EAR
dv/dt
650
±30
4*
2.4*
16*
69
4
3.4
4.5
mJ
A
mJ
V/ns
TL
300
°C
PD
100
0.8
-55~+150
W
W/°C
°C
ID
Tj, Tstg
Unit
V
A
*Drain current limited by maximum junction temperature
Note : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2. IAS=4A, VDD=50V, L=8mH, RG=25Ω, starting TJ=+25℃.
3. ISD≤4A, dI/dt≤100A/μs, VDD≤BVDSS, starting TJ=+25℃.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
MTN4N65F3
Symbol
Rth,j-c
Rth,j-a
Value
1.25
62.5
Unit
°C/W
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
650
2.0
-
0.5
2.3
3.0
4.0
±100
1
10
3.5
V
V/°C
V
S
nA
Ω
VGS=0V, ID=250μA, Tj=25℃
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=2A
VGS=±30V
VDS =650V, VGS =0V
VDS =520V, VGS =0V, TC=125°C
VGS =10V, ID=2A
11
2.6
4.6
15
33
30
37
568
51
9.6
-
nC
ID=4A, VDD=520V, VGS=10V
ns
VDD=325V, ID=4A, VGS=10V,
RG=25Ω
pF
VGS=0V, VDS=25V, f=1MHz
280
2
1.5
4
16
-
V
IS=4A, VGS=0V
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
IGSS
IDSS
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
*trr
*Qrr
-
μA
A
ns
μC
VGS=0V, IF=4A, dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN4N65F3
CYStek Product Specification
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 4/ 9
CYStech Electronics Corp.
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
15V
10V
9V
7V
ID, Drain Current(A)
6
5
RDS(ON), Normalized Static Drain-Source
On-state Resistance
7
6V
5.5V
4
3
5V
2
1
VGS=4.5V
0
0
10
20
30
40
50
2.4
2.2
2
1.8
1.6
1.4
1.2
1
ID=2A,
VGS=10V
0.8
0.6
0.4
-100
60
-50
VDS, Drain-Source Voltage(V)
6
100
150
4
VGS=10V
Ta=25°C
VDS=10V
3.5
ID, Drain Current(A)
R DS(ON), Static Drain-Source On-State
Resistance(Ω)
50
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
4
3
2.5
2
1.5
1
0.5
0
2
0.1
1
0
10
10
15
20
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Body Diode Forward Voltage Variation with Source
Current and Temperature
100
IDR, Reverse Drain Current(A)
Ta=25°C
12
9
6
ID=2A
3
5
VGS, Gate-Source Voltage(V)
15
R DS(ON), Static Drain-Source OnState Resistance(Ω)
0
TA, Ambient Temperature(°C)
VGS=0V
10
Ta=150°C
1
Ta=25°C
0.1
0
0
MTN4N65F3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, Source Drain Voltage(V)
CYStek Product Specification
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 5/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
Brekdown Voltage vs Ambient Temperature
1.2
1000
100
BVDSS, Normalized Drain-Source
Breakdown Voltage
Capacitance(pF)
Ciss
Coss
10
Crss
f=1MHz
1
1.1
1
0.9
0.8
ID=250μA,
VGS=0V
0.7
0.6
0
5
10
15
20
25
VDS, Drain-to-Source Voltage(V)
-75
30
-50
-25
25
50
75
100 125 150 175
Gate Charge Characteristics
Maximum Safe Operating Area
10
100
Operation in this area
is limited by RDS(ON)
VDS=130V
10 μ s
10
1ms
100μs
10ms
1
100ms
DC
0.1
Single pulse
Tc=25°C
Tj=150°C
VGS, Gate-Source Voltage(V)
ID, Drain Current (A)
0
Tj, Ambient Temperature(°C)
VDS=325V
8
VDS=520V
6
4
2
ID=4A
0
0.01
1
10
100
0
1000
2
4
6
8
10
12
Qg , Total Gate Charge(nC)
VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
Single Pulse Power Rating, Junction to Case
5
5000
4500
4
TJ(MAX) =150°C
TC=25°C
θ JC=1.25°C/W
4000
3.5
3500
3
Power (W)
ID, Maximum Drain Current(A)
4.5
2.5
2
1.5
3000
2500
2000
1500
1
1000
0.5
500
0
25
50
75
100
125
TC, Case Temperature(°C)
MTN4N65F3
150
175
0
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
CYStek Product Specification
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 6/ 9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient Thermal
Resistance
D=0.5
0.2
0.1
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t 1/t 2
3.T JM-T C=P DM*RθJC(t)
4.RθJC=1.25 ° C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-05
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTN4N65F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTN4N65F3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN4N65F3
CYStek Product Specification
Spec. No. : C797F3
Issued Date : 2015.03.06
Revised Date : 2015.09.03
Page No. : 9/ 9
CYStech Electronics Corp.
TO-263 Dimension
Marking :
Device Name
Date Code
4N65
□□□□
Style : Pin 1.Gate
2.Drain
3.Source
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Millimeters
Min.
Max.
4.470
4.670
0.000
0.150
1.170
1.370
0.710
0.910
1.170
1.370
0.310
0.530
1.170
1.370
10.010
10.310
DIM
A
A1
B
b
b1
c
c1
D
Inches
Min.
Max.
0.176
0.184
0.000
0.006
0.046
0.054
0.028
0.036
0.046
0.054
0.012
0.021
0.046
0.054
0.394
0.406
DIM
E
e
e1
L
L1
L2
L3
V
Millimeters
Min.
Max.
8.500
8.900
*2.540
4.980
5.180
15.050
15.450
5.080
5.480
2.340
2.740
1.300
1.700
5.600 REF
Inches
Min.
Max.
0.335
0.350
*0.100
0.196
0.204
0.593
0.608
0.200
0.216
0.092
0.108
0.051
0.067
0.220 REF
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN4N65F3
CYStek Product Specification