HBNP45S6R

CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2004.04.19
Revised Date : 2013.12.26
Page No. : 1/7
General Purpose NPN / PNP Epitaxial Planar Transistors
(dual transistors)
HBNP45S6R
Features
• Includes a BTC2412 chip and a BTA1037 chip in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• Pb-free lead plating and halogen-free package.
Equivalent Circuit
Outline
HBNP45S6R
SOT-363
EIAJ:SC-88/SC-70-6 JEDEC: SOT-363
Ordering Information
Device
HBNP45S6R-0-T1-G
Package
SOT-363
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP45S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2004.04.19
Revised Date : 2013.12.26
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
TR1 (NPN)
60
50
7
150
TR2 (PNP)
-60
-50
-6
-150
200(total)
*1
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Note: *1 150mW per element must not be exceeded.
Characteristics (Ta=25°C)
• TR1 (NPN)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
60
50
7
200
80
-
Typ.
0.2
180
2
Max.
0.1
0.1
0.4
600
3.5
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=50μA
VCB=60V
VEB=7V
IC=50mA, IB=5mA
VCE=6V, IC=1mA
VCE=12V, IC=2mA, f=100MHz
VCB=12V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
• TR2 (PNP)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
-60
-50
-6
200
60
-
Typ.
-0.25
140
4
Max.
-0.1
-0.1
-0.5
600
5
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=-50μA
IC=-1mA
IE=-50μA
VCB=-60V
VEB=-6V
IC=-50mA, IB=-5mA
VCE=-6V, IC=-1mA
VCE=-12V, IC=-2mA, f=100MHz
VCB=-12V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
HBNP45S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2004.04.19
Revised Date : 2013.12.26
Page No. : 3/7
Characteristic curves
• TR1 (NPN)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCE(SAT)@IC=10IB
Current Gain--- HFE
Saturation Voltage---(mV)
HFE@VCE=6V
100
100
10
0.1
1
10
100
1000
0.1
Collector Current --- IC(mA)
Saturation Voltage vs Collector Current
1
10
100
Collector Current --- IC(mA)
1000
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---FT(MHZ)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
FT@VCE=12V
100
10
100
0.1
1
10
100
Collector Current --- IC(mA)
1000
0.1
1
10
100
Collector Current --- IC(mA)
Capacitance Characteristics
100
Capacitance---(pF)
fT=1MHz
Cib
10
Cob
1
0.1
HBNP45S6R
1
10
Reverse-biased Voltage---(V)
100
CYStek Product Specification
Spec. No. : C901S6R
Issued Date : 2004.04.19
Revised Date : 2013.12.26
Page No. : 4/7
CYStech Electronics Corp.
• TR2 (PNP)
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain--- HFE
HFE@VCE=6V
100
100
10
10
0.1
1
10
100
0.1
1000
10
100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Cutoff Frequency vs Collector Current
1000
1000
Cutoff Frequency---FT(MHZ)
VBE(SAT)@IC=10IB
1000
FT@VCE=12V
100
10
100
0.1
1
10
100
Collector Current---IC(mA)
0.1
1000
Capacitance Characteristics
1
10
Collector Current---IC(mA)
100
Power Derating Curves
100
Power Dissipation---PD(mW)
250
fT=1MHz
Capacitance---(pF)
1
Collector Current---IC(mA)
10000
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
Cib
10
Cob
200
dual
150
single
100
50
0
1
0.1
HBNP45S6R
1
10
Reverse-biased Voltage---(V)
100
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2004.04.19
Revised Date : 2013.12.26
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
HBNP45S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2004.04.19
Revised Date : 2013.12.26
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
HBNP45S6R
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C901S6R
Issued Date : 2004.04.19
Revised Date : 2013.12.26
Page No. : 7/7
SOT-363 Dimension
Marking:
46
Device
Code
6-Lead SOT-363 Plastic
Surface Mounted Package
CYStek Package Code: S6R
Style:
Pin 1. Emitter1 (E1)
Pin 2. Base1 (B1)
Pin 3. Collector2 (C2)
Pin 4. Emitter2 (E2)
Pin 5. Base2 (B2)
Pin 6. Collector1 (C1)
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBNP45S6R
CYStek Product Specification