MTN7002ZN3

CYStech Electronics Corp.
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :2014.04.25
Page No. : 1/7
N-CHANNEL MOSFET
MTN7002ZN3
Features
• Low on-resistance
• High ESD
• High speed switching
• Low-voltage drive(4V)
• Easily designed drive circuits
• Easy to use in parallel
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTN7002ZN3
D
SOT-23
D
G
S
G
G：Gate
S：Source
D：Drain
S
Ordering Information
Device
MTN7002ZN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTP8550N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :2014.04.25
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA=25°C@VGS=10V
TA=70°C@VGS=10V
ID
IDM
PD
Pulsed Drain Current *1, 2
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
ESD susceptibility
Operating Junction Temperature Range
Storage Temperature Range
Rth,j-a
TJ
Tstg
Limits
60
±20
640
500
950
1.38
0.01
90
2000
-55~+150
-55~+150
*1
*2
*2
*3
Unit
V
V
mA
mA
mA
W
W/°C
°C/W
V
°C
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on 1in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad.
*3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVDSS*
60
BVDSS/ΔTj
0.06
VGS(th)
1
2.5
IGSS
±10
1
IDSS
100
1.8
2
RDS(ON)*
1.23
5
1.25
4
VSD
1.2
GFS
600
Ciss
32
50
Coss
8
Crss
6
Qg
1
Qgs
0.5
Qgd
0.5
td(on)
12
tr
10
td(off)
56
tf
29
-
Unit
V
V/℃
V
μA
V
mS
Test Conditions
VGS=0, ID=250μA
Reference to 25℃, ID=1mA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0
VDS=60V, VGS=0
VDS=48V, VGS=0, Tj=70℃
ID=200mA, VGS=4.5V
ID=100mA, VGS=10V
ID=500mA, VGS=10V
IS=1.2A, VGS=0V
VDS=10V, ID=600mA
pF
VDS=25V, VGS=0, f=1MHz
nC
ID=600mA, VDS=50V, VGS=4.5V
ns
VDS=30V, ID=600mA, RG=3.3Ω, VGS=10V,
RD=52Ω
μA
Ω
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BTP8550N3
CYStek Product Specification
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :2014.04.25
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristic Curves
Typical Output Characteristics
Typical Transfer Characteristics
0.7
1.2
0.6
6V
4V
0.8
0.6
3.5V
0.4
3V
VDS=10V
0.5
Drain Current -ID(A)
Drain Current - ID(A)
1
0.4
0.3
0.2
0.2
0.1
VGS=2.2V
0
0
0
1
2
3
Drain-Source Voltage -VDS(V)
0
4
10
10
VGS=4V
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
Static Drain-Source On-State
Resistance-RDS(on)(Ω)
4
Static Drain-Source On-State resistance vs Drain Current
Static Drain-Source On-State resistance vs Drain Current
1
VGS=4V
1
VGS=10V
0.1
0.1
0.01
0.1
Drain Current-ID(A)
0.01
1
0.1
1
Drain Current-ID(A)
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
10
Reverse Drain Current -IDR(A)
7
Static Drain-Source On-State
Resistance-RDS(ON)(Ω)
1
2
3
Gate-Source Voltage-VGS(V)
6
5
4
3
ID=300mA
2
1
150mA
1
0.1
0.01
VGS=0V
0.001
0
0
BTP8550N3
5
10
15
20
Gate-Source Voltage-VGS(V)
25
0
0.2
0.4
0.6
0.8
Source-Drain Voltage-VSD(V)
1
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C313N3-H
Issued Date : 2003.09.26
Revised Date :2014.04.25
Page No. : 4/7
Characteristic Curves(Cont.)
Reverse Drain Current vs Source-Drain Voltage
Power Derating Curve
250
Power Dissipation---PD(mW)
Reverse Drain Current -IDR(A)
10
VGS=0V
1
0.1
VGS=10V
0.01
200
150
100
50
0
0.001
0
0.2
0.4
0.6
0.8
Source-Drain Voltage-VSD(V)
1
0
50
100
150
Ambient Temperature---TA(℃)
200
Recommended Soldering Footprint
BTP8550N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C403N3
Issued Date : 2006.05.22
Revised Date :2011.12.13
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN7002ZN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C403N3
Issued Date : 2006.05.22
Revised Date :2011.12.13
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN7002ZN3
CYStek Product Specification
Spec. No. : C403N3
Issued Date : 2006.05.22
Revised Date :2011.12.13
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Device Code
702
TE●
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7002ZN3
CYStek Product Specification