Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 1/ 9 CYStech Electronics Corp. 30V P-CHANNEL Enhancement Mode MOSFET MTP3LP01N3 BVDSS ID -30V -230mA 3Ω@-4V 4.6Ω@-2.5V 10.9Ω@-1.5V RDSON(typ) Features • Ultra high speed switching. • Low gate charge. • 2.5V drive. • Pb-free lead plating and halogen-free package. Equivalent Circuit Outline SOT-23 MTP3LP01N3 D G:Gate S:Source D:Drain G S Ordering Information Device MTP3LP01N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTP3LP01N3 CYStek Product Specification Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 2/ 9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Maximum Power Dissipation (Note 2) Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature VDS VGS ID IDM PD Rth,ja Tj, Tstg Limits -30 ±10 -230 -920 250 500 -55~+150 Unit V V mA mA mW °C/W °C Note : 1. Pulse width≤ 10μs, duty cycle≤1%. 2. When mounted on a glass epoxy with a dimension of 100mm²×1mm. Electrical Characteristics (Ta=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd Source-Drain Diode *IS *ISM *VSD Min. Typ. Max. Unit Test Conditions -30 -0.6 100 - 0.9 210 3 4.6 10.9 -1.1 ±1 -1 -10 5 8 18 V V mS μA VGS=0V, ID=-250μA VDS=-10V, ID=-100μA VDS=-10V, ID=-100mA VGS=±8V, VDS=0 VDS=-30V, VGS=0 VDS=-24V, VGS=0; Tj=125°C VGS=-4V, ID=-100mA VGS=-2.5V, ID=-30mA VGS=-1.5V, ID=-1mA - 35.7 11.9 3.7 26.4 12.8 31.5 46.4 0.78 0.1 0.1 - - 0.83 -230 -920 -1.2 μA Ω pF VDS=-20V, VGS=0, f=1MHz ns VDS=-15V, ID=-100mA, VGS=-4V, RL=150Ω, RG=50Ω nC VDS=-10V, ID=-100mA, VGS=-10V mA V VGS=0V, IS=-100mA *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTP3LP01N3 CYStek Product Specification Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 3/ 9 CYStech Electronics Corp. Typical Characteristics(The minus sign in voltage and current is omitted) Typical Output Characteristics Typical Transfer Characteristics 200 0.3 TA=25°C 6V 25°C VDS=10V 3.5V 3V Drain Current -I D(A) Drain Current --- I D(A) 0.25 4V 0.2 2.5V 0.15 0.1 2V 150 75°C 100 125°C 50 0.05 VGS=1.5V 0 0 0 0.5 1 1.5 Drain-Source Voltage ---VDS(V) 0 2 0.5 1 1.5 2 2.5 Gate-Source Voltage-VGS(V) Static Drain-Source On-State Resistance vs Gate-Source Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 10 10 ID=50mA Static Drain-Source On-State Resistance-RDS(ON) (Ω) Static Drain-Source On-State Resistance-RDS(ON) (Ω) ID=30mA 8 TA=25°C 6 TA=75°C 4 2 8 TA=25°C 6 TA=75°C 4 2 TA=125°C TA=125°C 0 0 0 2 4 6 8 Gate-Source Voltage-VGS(V) 10 0 2 4 6 8 Gate-Source Voltage-VGS(V) 10 Static Drain-Source On-State resistance vs Drain Current Static Drain-Source On-State resistance vs Drain Current 100 Static Drain-Source On-State ResistanceRDS(on) (Ω) 100 Static Drain-Source On-State ResistanceRDS(on) (Ω) 3 VGS=1.5V TA=125°C TA=75°C 10 TA=25°C 1 VGS=2.5V TA=125°C 10 TA=75°C TA=25°C 1 0.1 MTP3LP01N3 1 Drain Current-I D(mA) 10 1 10 Drain Current-I D(mA) 100 CYStek Product Specification Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 4/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Static Drain-Source On-State resistance vs Ambient Temperature Static Drain-Source On-State resistance vs Drain Current 10 Static Drain-Source On-State ResistanceRDS(on)(Ω) 10 Static Drain-Source On-State Resistance-RDS(on) (Ω) VGS=4V TA=125°C TA=75°C TA=25°C 8 ID=30mA, VGS=2.5V 6 4 ID=50mA, VGS=4V 2 0 1 1 10 100 Drain Current-ID(mA) 0 1000 Reverse Drain Current vs Source-Drain Voltage Capacitance vs Drain-to-Source Voltage VGS=0V 1 Ciss TA=125°C Capacitance---(pF) Source-Drain Voltage-VSD(V) 150 100 1.2 0.8 0.6 TA=75°C 0.4 C oss 10 Crss TA=25°C 0.2 f=1MHz 1 0 0.1 1 10 100 Reverse Drain Current -I DR (mA) 0 1000 Forward Transfer Admittance vs Drain Current 5 10 15 20 25 Drain-Source Voltage -VDS(V) 30 Brekdown Voltage vs Ambient Temperature 45 Drain-Source Breakdown Voltage BVDSS(V) 1000 Forward Transfer Admittance---GFS(mS) 50 100 Ambient Temperature-TA(°C) TA=25°C TA=75°C 100 TA=125°C 10 10 MTP3LP01N3 100 Drain Current-I D(mA) 1000 40 35 ID=250μA, VGS=0V 30 -100 -50 0 50 100 150 200 Ambient Temperature-Tj(°C) CYStek Product Specification Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 5/ 9 CYStech Electronics Corp. Typical Characteristics(Cont.) Static Drain-Source On-resistance vs Ambient Temperature Gate Charge Characteristics 10 6 Gate-Source Voltage---VGS(V) Static Drain-Source On-state Resistance-RDS(on)(Ω) 9 5 4 3 2 ID=100mA, VGS=4V 1 0 -100 VDS=10V, ID=100mA 8 7 6 5 4 3 2 1 0 -50 0 50 100 Ambient Temperature-Ta(°C) 150 0 200 0.2 250 1 Drain Current --- ID(A) 300 200 150 100 0 MTP3LP01N3 0.5 0.6 0.7 0.8 PW<100μs 1ms 10ms 0.1 100ms DC 0.01 Single pulse Tc=25°C; Tj=150°C implemented on a glass epoxy 0.001 50 50 100 150 Ambient Temperature---TA(℃) 0.4 Maximum Safe Operating Area 10 0 0.3 Total Gate Charge---Qg(nC) Power Derating Curves Power Dissipation---PD(mW) 0.1 200 0.0001 0.001 0.01 0.1 1 10 100 Drain-Source Voltage -VDS(V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 6/ 9 Typical Characteristics(Cont.) Transient Thermal Response Curves ZθJA(t), Normalized Transient Thermal Resistance 10 1 0.1 ZθJA(t)=500°C/W max. Implemented on a glass epoxy 0.01 0.001 1.E-05 Single Pulse 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) Recommended Soldering Footprint MTP3LP01N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 7/ 9 Reel Dimension Carrier Tape Dimension MTP3LP01N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 8/ 9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP3LP01N3 CYStek Product Specification Spec. No. : 794N3 Issued Date : 2010.06.17 Revised Date : 2014.01.17 Page No. : 9/ 9 CYStech Electronics Corp. SOT-23 Dimension Marking: Device Name TE AB XX Date Code 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain *: Typical DIM Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP3LP01N3 CYStek Product Specification