MTN7002ZHS3

CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2014.01.28
Page No. : 1/7
N-Channel Enhancement Mode MOSFET
MTN7002ZHS3
Description
The MTN7002ZHS3 is a N-channel enhancement-mode MOSFET.
Features
• Low on-resistance
• Low-voltage drive(4V)
• High ESD
• Easily designed drive circuits
• High speed switching
• Easy to use in parallel
• Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-323
MTN7002ZHS3
D
D
G
S
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTN7002ZHS3-0-T1-G
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2014.01.28
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Symbol
VDSS
VGSS
ID
IDP
IDR
IDRP
PD
Continuous
Pulsed
Continuous
Pulsed
Total Power Dissipation
ESD susceptibility
Channel Temperature
Storage Temperature
TCH
Tstg
Limits
60
±20
115
700
*1
115
700
*1
200
*2
1250
*3
+150
-55~+150
Unit
V
V
mA
mA
mA
mA
mW
V
°C
°C
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2%
*2. When the device is mounted on a glass epoxy board with area measuring 1×0.75×0.62 inch
*3. Human body model, 1.5kΩ in series with 100pF
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVDSS*
60
VGS(th)
1
2.5
IGSS
±10
IDSS
1
1.8
5.5
RDS(ON)*
1.5
5
GFS
100
240
Ciss
30.6
Coss
5.5
Crss
4
td(ON)
3
tr
5
td(OFF)
14
tf
9
Qg
1.1
Qgs
0.1
Qgd
0.23
-
Unit
mS
Test Conditions
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VDS=60V, VGS=0V
ID=100mA, VGS=5V
ID=100mA, VGS=10V
VDS=10V, ID=100mA
pF
VDS=10V, VGS=0V, f=1MHz
ns
VDS=30V, ID=200mA, VGS=10V, RG=6Ω
nC
VDS=30V, ID=200mA, VGS=10V
V
μA
Ω
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2014.01.28
Page No. : 3/7
Typical Characteristics
Typical Output Characteristics
Typical Transfer Characteristics
1.6
1.6
1.2
1.0
4.5V
0.8
0.6
4V
0.4
3.5V
0.2
0
2
4
VGS=2V
8
6
1.2
1.0
0.8
0.6
0.4
0.2
3V
2.5V
0.0
VDS=10V
1.4
10V
6V
5V
ID, Drain Current(A)
ID, Drain Current(A)
1.4
0.0
0
10
2
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
1.2
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(Ω)
10
Reverse Drain Current vs Source-Drain Voltage
100
VGS=2.5V
10
VGS=4.5V
VGS=10V
1
Tj=25°C
0.8
Tj=125°C
0.6
0.4
0.2
1
0.001
0.01
0.1
ID, Drain Current(A)
0
1
0.2
0.4
0.6
0.8
IDR , Reverse Drain Current(A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
R DS(ON), Normalized Static DrainSource On-State Resistance
10
R DS(ON), Static Drain-Source OnState Resistance(Ω)
4
6
8
VGS , Gate-Source Voltage(V)
ID=100mA
8
6
4
2
1.8
VGS=10V, ID=100mA
1.6
1.4
1.2
1
0.8
0.6
0.4
0
0
MTN7002ZHS3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2014.01.28
Page No. : 4/7
Typical Characteristics(Cont.)
Power Derating Curve
Capacitance vs Drain-to-Source Voltage
250
Power Dissipation---PD(mW)
100
Capacitance---(pF)
Ciss
10
C oss
Crss
200
150
100
50
0
1
0.1
1
10
VDS, Drain-Source Voltage(V)
100
0
50
100
150
Ambient Temperature---TA(℃)
200
VGS(th), Normalized Threshold Voltage
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Recommended Soldering Footprint
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2014.01.28
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2014.01.28
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN7002ZHS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3
Issued Date : 2007.11.06
Revised Date : 2014.01.28
Page No. : 7/7
SOT-323 Dimension
3
Marking:
A
Q
A1
1
C
Lp
2
TE
72
detail Z
bp
e1
W
B
e
E
D
A
Z
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
He
0
v
A
Style: Pin 1.Gate 2.Source 3.Drain
2 mm
1
scale
*: Typical
Inches
Min.
Max.
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
0.0512
-
DIM
A
A1
bp
C
D
E
e
Millimeters
Min.
Max.
0.80
1.10
0.00
0.10
0.30
0.40
0.10
0.25
1.80
2.20
1.15
1.35
1.3
-
DIM
e1
He
Lp
Q
v
w
θ
Inches
Min.
Max.
0.0256
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
0.0079
-
Millimeters
Min.
Max.
0.65
2.00
2.25
0.15
0.45
0.13
0.23
0.2
0.2
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7002ZHS3
CYStek Product Specification