MTN4410Q8

CYStech Electronics Corp.
Spec. No. : C397Q8
Issued Date : 2007.06.14
Revised Date : 2014.01.23
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTN4410Q8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Dynamic dv/dt rating
• Repetitive Avalanche Rated
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTN4410Q8
SOP-8
G：Gate D：Drain S：Source
Ordering Information
Device
MTN4410Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTN4410Q8
CYStek Product Specification
Spec. No. : C397Q8
Issued Date : 2007.06.14
Revised Date : 2014.01.23
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction-to-ambient, max
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by safe operating area
VDS
VGS
ID
ID
IDM
PD
Rth,j-a
Tj, Tstg
Limits
30
±20
12
9.6
50 *1
2.5
0.02
50
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Static
BVDSS
30
∆BVDSS/∆Tj
VGS(th)
1.0
GFS
IGSS
IDSS
IDSS
*RDS(ON)
*RDS(ON)
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*VSD
*IS
*ISM
-
Typ.
Max.
Unit
Test Conditions
0.02
1.6
7.6
9
14
3.0
±100
1
25
13.5
20
V
V/°C
V
S
nA
μA
μA
mΩ
mΩ
VGS=0, ID=250μA
Reference to 25°C, ID=1mA
VDS = VGS, ID=250μA
VDS =10V, ID=10A
VGS=±20
VDS =30V, VGS =0
VDS =24V, VGS =0, Tj=55°C
VGS =10V, ID=10A
VGS =4.5V, ID=5A
16
3.8
6.2
7.5
17
36
15
1119
124
105
-
nC
ID=10A, VDS=15V, VGS=5V
ns
VDS=25V, ID=1A, VGS=5V,
RG=3.3Ω, RD=25Ω
pF
VGS=0V, VDS=15V, f=1MHz
-
1.3
2.3
9.2
V
A
A
IS=2.3A, VGS=0V
VD=VG=0, VS=1.3V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN4410Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397Q8
Issued Date : 2007.06.14
Revised Date : 2014.01.23
Page No. : 3/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
45
5V,6V,7V,8V,9V,10
4V
ID, Drain Current (A)
40
35
30
25
20
15
VGS=3V
10
5
40
BVDSS, Drain-Source Breakdown Voltage
(V)
50
38
36
34
32
VGS=2V
30
0
0
1
2
3
ID=250μA,
VGS=0V
-75 -50 -25
5
4
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VSD, Source-Drain Voltage(V)
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
1000
VGS=2.5V
100
VGS=3V
VGS=4.5V
10
VGS=10V
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
1
0.01
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
30
R DS(on), Static Drain-Source On-State
Resistance(mΩ)
R DS(on), Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
180
160
140
120
100
80
60
ID=10A
ID=5A
40
20
25
20
VGS=4.5V, ID=5A
15
10
VGS=10V, ID=10A
5
0
0
0
MTN4410Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
Spec. No. : C397Q8
Issued Date : 2007.06.14
Revised Date : 2014.01.23
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
2.2
VGS(th), Threshold Voltage(V)
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
ID=250μA
2
1.8
1.6
1.4
1.2
1
0.8
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
Forward Transfer Admittance vs Drain Current
100
140
10
VDS=5V
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
60
Gate Charge Characteristics
10
1
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
8
VDS=10V
VDS=15V
6
4
2
ID=10A
0
0.01
0.1
1
ID, Drain Current(A)
0
10
10μs
10
100μs
1ms
1
10ms
100ms
0.1
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
14
RDSON
Limited
ID, Maximum Drain Current(A)
100
5
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
ID, Drain Current(A)
20
Tj, Junction Temperature(°C)
TA=25°C, Tj=150°C
VGS=10V, θJA=50°C/W
Single Pulse
DC
12
10
8
6
4
TA=25°C
VGS=10V
2
0
0.01
0.1
MTN4410Q8
1
10
VDS, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C397Q8
Issued Date : 2007.06.14
Revised Date : 2014.01.23
Page No. : 5/8
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
r(t), Normalized Effective Transient
Thermal Resistance
D=0.5
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=50°C/W
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTN4410Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397Q8
Issued Date : 2007.06.14
Revised Date : 2014.01.23
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTN4410Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C397Q8
Issued Date : 2007.06.14
Revised Date : 2014.01.23
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN4410Q8
CYStek Product Specification
Spec. No. : C397Q8
Issued Date : 2007.06.14
Revised Date : 2014.01.23
Page No. : 8/8
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
I
C
B
Marking:
Device Name
Date Code
H
4410SC
□□□□
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1890
0.2007
0.1496
0.1654
0.2283
0.2441
0.0480
0.0519
0.0138
0.0193
0.1472
0.1527
0.0531
0.0689
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.80
5.10
3.80
4.20
5.80
6.20
1.22
1.32
0.35
0.49
3.74
3.88
1.35
1.75
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0098 REF
0.0118
0.0354
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.25 REF
0.30
0.90
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN4410Q8
CYStek Product Specification